Fairchild Semiconductor BC846B, BC846A-MR, BC846B-MR, BC846A Datasheet

					BC846A				BC847A
					BC846B				BC847B
									BC847C
							C		C
								E	E
SOT-23 B									SOT-23 B
Mark: 1A. / 1B.									Mark: 1E. / 1F. / 1G.

NPN General Purpose Amplifier

This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 A to 50 mA. Sourced from Process 07.

Absolute Maximum Ratings*		TA = 25°C unless otherwise noted
Symbol	Parameter		Value	Units
VCEO	Collector-Emitter Voltage	BC846 series	65	V
		BC847 series	45	V
VCES	Collector-Base Voltage	BC846 series	80	V
		BC847 series	50	V
VEBO	Emitter-Base Voltage		6.0	V
IC	Collector Current - Continuous		100	mA
TJ, Tstg	Operating and Storage Junction Temperature Range		-55 to +150	° C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)These ratings are based on a maximum junction temperature of 150 degrees C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol	Characteristic	Max	Units
		*BC846 / BC847
PD	Total Device Dissipation	325	mW
	Derate above 25° C	2.8	mW/° C
Rθ JA	Thermal Resistance, Junction to Ambient	357	° C/W

*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

BC847C / BC847B / BC847A / BC846B / BC846A

1997 Fairchild Semiconductor Corporation

NPN General Purpose Amplifier

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol	Parameter	Test Conditions		Min	Max	Units
OFF CHARACTERISTICS
V(BR)CEO	Collector-Emitter Breakdown	IC = 10 mA, IB = 0	846A / B	65		V
	Voltage		847A / B	45
V(BR)CES	Collector-Base Breakdown Voltage	IC = 10 µ A, IE = 0	846A / B	80		V
			847A / B	50
V(BR)EBO	Emitter-Base Breakdown Voltage	IE = 10 µ A, IC = 0		6.0		V
ICBO	Collector-Cutoff Current	VCB = 30 V			15	nA
		VCB = 30 V, TA = 150° C			5.0	µ A
ON CHARACTERISTICS
hFE	DC Current Gain	IC = 2.0 mA, VCE = 5.0 V
		846A / 847A		110	220
		846B / 847B		200	450
			847C	420	800
VCE(sat)	Collector-Emitter Saturation Voltage	IC = 10 mA, IB = 0.5 mA			0.25	V
		IC = 100 mA, IB = 5.0 mA			0.6	V
VBE(on)	Base-Emitter On Voltage	IC = 2.0 mA, VCE = 5.0 V		0.58	0.70	V
		IC = 10 mA, VCE = 5.0 V			0.77	V
SMALL SIGNAL CHARACTERISTICS
fT	Current Gain - Bandwidth Product	IC = 10 mA, VCE = 5.0,		100		MHz
		f = 100 MHz
Cobo	Output Capacitance	VCB = 10 V, f = 1.0 MHz			4.5	pF
NF	Noise Figure	IC = 0.2 mA, VCE = 5.0,			10	dB
		RS = 2.0 kΩ , f = 1.0 kHz,
		BW = 200 Hz

Typical Characteristics

Typical Pulsed Current Gain

GAIN		vs Collector Current
	1200						V CE = 5.0 V
CURRENT			125 °C
	1000
	800
PULSED	600
				25 °C
	400
- TYPICAL
						- 40 °C
	200
	0
FE		0.03	0.1	0.3	1	3	10	30	100
h	0.01

I C - COLLECTOR CURRENT (mA)

Collector-Emitter Saturation

(V)		Voltage vs Collector Current
VOLTAGE	0.3
	0.25	β	= 10
-EMITTER	0.2			125 °C
	0.15
- COLLECTOR	0.1			25 °C
	0.05			- 40 °C
CESAT	0.1		1	10	100
			I C - COLLECTOR CURRENT (mA)
V

BC847C / BC847B / BC847A / BC846B / BC846A

Typical Characteristics

Base-Emitter Saturation

	(V)	Voltage vs Collector Current
	VOLTAGE
		1
				- 40 °C
	-EMITTER	0.8
		0.6		25 °C
	- COLLECTOR			125 °C
		0.4		β	= 10
		0.2
	BESAT	0.1	1	10	100
	V	I C	- COLLECTOR CURRENT (mA)

Collector-Cutoff Current vs Ambient Temperature

(nA)	10
	VCB	= 45V
CURRENT
- COLLE CTOR	1
CBO	0.1
I		50	75	100	125	150
	25

TA - AMBIE NT TEMP ERATURE (°C)

Normalized Collector-Cutoff Current

°C			vs Ambient Temperature
25
A	1000
=
VALUE AT T	100
S RELATI VE TO
	10
TIC
CHARACTERIS	1
			50			75		100		125		150
	25

TA - AMBIE NT TEMPERATURE ( °C)

NPN General Purpose Amplifier

(continued)

Base-Emitter ON Voltage vs

(V)		Collector Current
VOLTAGE	1
	0.8	- 40 °C
ON
		25 °C
-EMITTER	0.6
		125 °C
	0.4
- BASE	0.2		V CE = 5.0 V
BEON	0.1	1	10	40
V
		I C - COLLECTOR CURRENT (mA)

Input and Output Capacitance

vs Reverse Bias Voltage

	5
					f = 1.0 MHz
(pF)	4
CAPACITANCE	3
		C te
	2
	1				C ob
	0	4	8	12	16	20
	0

REVERSE BIAS VOLTAGE (V)

Wideband Noise Frequency

vs Source Resistance

	5		V CE = 5.0 V
(dB)	4		BANDWIDTH = 15.7 kHz
FIGURE	3			I C = 100 µ A
- NOISE	2					I C = 30 µ A
	1
NF					I C = 10 µ A
	0	2,000	5,000	10,000	20,000	50,000	100,000
	1,000
			R S - SOURCE RESISTANCE (Ω			)

BC847C / BC847B / BC847A / BC846B / BC846A

NPN General Purpose Amplifier

(continued)

Typical Characteristics (continued)

Noise Figure vs Frequency

	10
				I C = 200 µ A,
(dB)	8			R S = 10 kΩ
				I C = 100 µ A,
FIGURE
	6			R S = 10 kΩ
				I C = 1.0 mA,
- NOISE	4			R S = 500 Ω
				I C = 1.0 mA,
				R S = 5.0 kΩ
NF	2					V CE = 5.0V
	0	0.001	0.01	0.1	1	10	100
	0.0001

f - FREQUENCY (MHz)

Contours of Constant Gain

Bandwidth Product (fT )

(V)	10
VOLTAGE	7		175 MHz
	5
- COLLECTOR	3		150 MHz
	2		125 MHz
			100 MHz
			75 MHz
CE
V	1
		1	10	100
	0.1

I C - COLLECTOR CURRENT (mA)

Contours of Constant

Narrow Band Noise Figure

)	10,000		3.0 dB
(Ω
RESISTANCE	5,000		4.0 dB
	2,000
	1,000		6.0 dB
- SOURCE	500	V CE = 5.0 V	8.0 dB
			10 dB
		f = 100 Hz
	200	BANDWIDTH	12 dB
S		= 20 Hz
R	100		14 dB
	1	10	100	1,000
		I C - COLLECTOR CURRENT ( µ		A)

Contours of Constant

Narrow Band Noise Figure

)	10,000
Ω
(
RESISTANCE	5,000
				2.0 dB
	2,000
				3.0 dB
	1,000
- SOURCE				4.0 dB
	500
		V CE = 5.0 V		6.0 dB
		f = 1.0 kHz
	200	BANDWIDTH		8.0 dB
S		= 200 Hz
R	100
		1	10	100	1,000
		I C- COLLECTOR CURRENT ( µ			A)

Contours of Constant

Narrow Band Noise Figure

)	10000
(Ω	5000
RESISTANCE			1.0 dB
	2000		2.0 dB
	1000		3.0 dB
- SOURCE	500		4.0 dB
		V CE = 5.0V
			6	.0 dB
		f = 10kHz
	200
		BANDWIDTH
S				8.0 dB
R		= 2.0kHz
	100
		10	100	1000
	1
		I C - COLLECTOR CURRENT ( µ A)

Contours of Constant

Narrow Band Noise Figure

)	10000
Ω
(	5000
RESISTANCE
	2000			2.0 dB
	1000			3.0 dB
- SOURCE
	500	VCE =		4.0 dB	5.0
		5.0V			dB
	200	f = 1.0 MHz			6.0
		BANDWIDTH		7.0 dB	dB
S		= 200kHz
R	100			8.0 dB
			0.1	1	10
	0.01
		I C - COLLECTOR CURRENT ( µ A)

BC847C / BC847B / BC847A / BC846B / BC846A