BC635/637/639 |
|
|
|
NPN EPITAXIAL SILICON TRANSISTOR |
|||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
SWITCHING AND AMPLIFIER APPLICATIONS |
|
|
|
|
|
|
|
|
|
|
|
||||||
|
|
|
TO-92 |
|
|
|
|
|
|||||||||
∙ Complement to BC635/638/640 |
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
ABSOLUTE MAXIMUM RATINGS (TA=25°C) |
|
|
|
|
|
|
|
|
|
|
|
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Characteristic |
Symbol |
|
Rating |
|
Unit |
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Collector Emitter Voltage |
: BC635 |
VCER |
|
45 |
|
V |
|
|
|
|
|
|
|
|
|
||
at RBE=1Kohm |
: BC637 |
|
|
|
60 |
|
V |
|
|
|
|
|
|
|
|
|
|
|
: BC639 |
|
|
|
100 |
|
V |
|
|
|
|
|
|
|
|
|
|
Collector Emitter Voltage |
: BC635 |
VCES |
|
45 |
|
V |
|
|
|
|
|
|
|
|
|
||
|
: BC637 |
|
|
|
60 |
|
V |
|
|
|
|
|
|
|
|
|
|
|
: BC639 |
|
|
|
100 |
|
V |
|
|
|
|
|
|
|
|
|
|
Collector Emitter Voltage |
: BC635 |
VCEO |
|
45 |
|
V |
|
|
|
|
|
|
|
|
|
||
|
: BC637 |
|
|
|
60 |
|
V |
|
|
|
|
|
|
|
|
|
|
Emitter Base Voltage |
: BC639 |
VEBO |
|
80 |
|
V |
|
|
|
|
|
|
|
|
|
||
|
|
5 |
|
V |
|
|
|
|
|
|
|
|
|
||||
Collector Current |
|
IC |
|
1 |
|
A |
|
|
|
|
|
|
|
|
|
||
Peak Collector Current |
|
ICP |
|
1.5 |
|
A |
|
|
|
|
|
|
|
|
|
||
Base Current |
|
IB |
|
100 |
|
mA |
|
|
|
|
|
|
|
|
|
||
Collector Dissipation |
|
PC |
|
1 |
|
W |
|
|
|
|
|
|
|
|
|
||
Junction Temperature |
|
TJ |
|
150 |
|
°C |
|
|
1. Emitter 2. Collector 3. Base |
|
|
||||||
Storage Temperature |
|
TSTG |
|
-65 ~ 150 |
|
°C |
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
∙ PW=5ms, Duty Cycle=10% |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
ELECTRICAL CHARACTERISTICS (TA=25°C) |
|
|
|
|
|
|
|
|
|
|
|
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
Characteristic |
|
Symbol |
|
|
Test Conditions |
|
Min |
Typ |
Max |
|
Unit |
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
Collector-Emitter Breakdown Voltage |
|
BVCEO |
|
IC=10mA, IB=0 |
|
45 |
|
|
|
V |
|||||||
|
: BC635 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
: BC736 |
|
|
|
|
|
|
|
|
|
|
60 |
|
|
|
V |
|
|
: BC639 |
|
ICBO |
|
|
|
|
|
|
|
80 |
|
|
|
V |
||
Collector Cut-off Current |
|
|
|
VCB=30V, IE=0 |
|
|
|
0.1 |
|
μA |
|||||||
Emitter Cut-off Current |
|
|
IEBO |
|
VEB=5V, IC=0 |
|
|
|
0.1 |
|
μA |
||||||
DC Current Gain |
|
|
hFE |
|
VCE=2V, IC=5mA |
|
25 |
|
|
|
|
|
|||||
|
:BC635 |
|
|
|
|
VCE=2V, IC=150mA |
|
40 |
|
250 |
|
|
|
||||
|
: BC637/BC639 |
|
|
|
|
|
|
|
|
40 |
|
160 |
|
|
|
||
Collector Emitter Saturation Voltage |
|
VCE(sat) |
|
VCE=2V, IC=500mA |
|
25 |
|
|
|
V |
|||||||
|
|
IC=500mA, IB=50mA |
|
|
|
0.5 |
|
||||||||||
Base Emitter On Voltage |
|
|
VBE(on) |
|
VCE=2V, IC=500mA |
|
|
|
1 |
|
V |
||||||
Current Gain Bandwidth Product |
|
fT |
|
VCE=5V, IC=10mA, f=50MHz |
|
100 |
|
|
MHz |
||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Rev. B
ã1999 Fairchild Semiconductor Corporation
Loading...