Discrete POWER & Signal
Technologies
BC807-16
BC807-25
BC807-40
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C |
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E |
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SOT-23 |
B |
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Mark: 5A. / 5B. / 5C. |
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PNP General Purpose Amplifier |
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This device is designed for general purpose amplifier and switching |
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applications at currents to 1.0 A. Sourced from Process 78. |
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Absolute Maximum Ratings* |
TA = 25°C unless otherwise noted |
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Symbol |
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Parameter |
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Value |
Units |
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VCEO |
Collector-Emitter Voltage |
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45 |
V |
VCES |
Collector-Base Voltage |
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50 |
V |
VEBO |
Emitter-Base Voltage |
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5.0 |
V |
IC |
Collector Current - Continuous |
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1.2 |
A |
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TJ, Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
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*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)These ratings are based on a maximum junction temperature of 150 degrees C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics |
TA = 25°C unless otherwise noted |
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Symbol |
Characteristic |
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Max |
Units |
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*BC807-16 / -25 / -40 |
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PD |
Total Device Dissipation |
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350 |
mW |
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Derate above 25°C |
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2.8 |
mW/°C |
RθJA |
Thermal Resistance, Junction to Ambient |
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357 |
°C/W |
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*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
40-BC807 / 25-BC807 / 16-BC807
ã 1997 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
(continued)
Electrical Characteristics |
TA = 25°C unless otherwise noted |
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Symbol |
Parameter |
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Test Conditions |
Min |
Max |
Units |
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OFF CHARACTERISTICS |
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V(BR)CEO |
Collector-Emitter Breakdown Voltage |
IC = 10 mA, IB = 0 |
45 |
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V |
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V(BR)CES |
Collector-Base Breakdown Voltage |
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IC = 100 μA, IE = 0 |
50 |
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V |
V(BR)EBO |
Emitter-Base Breakdown Voltage |
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IE = 10 μA, IC = 0 |
5.0 |
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V |
ICBO |
Collector-Cutoff Current |
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VCB = 20 V |
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100 |
nA |
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VCB = 20 V, TA = 150°C |
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5.0 |
μA |
ON CHARACTERISTICS |
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hFE |
DC Current Gain |
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IC = 100 mA, VCE = 1.0 V - 16 |
100 |
250 |
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- 25 |
160 |
400 |
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- 40 |
250 |
600 |
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IC = 500 mA, VCE = 1.0 V |
40 |
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VCE(sat) |
Collector-Emitter Saturation Voltage |
IC = 500 mA, IB = 50 mA |
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0.7 |
V |
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VBE(on) |
Base-Emitter On Voltage |
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IC = 500 mA, VCE = 1.0 V |
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1.2 |
V |
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Typical Characteristics
GAIN |
Typical Pulsed Current Gain |
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vs Collector Current |
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CURRENT |
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400 |
V CE = 5V |
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300 |
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PULSED |
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125 °C |
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200 |
25 °C |
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TYPICAL- |
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0 |
- 40 ºC |
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100 |
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FE |
0.01 |
0.1 |
1 |
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h |
I C - COLLECTOR CURRENT (A) |
EMITTER-COLLECTOR (V)VOLTAGE
- CESAT V
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Collector-Emitter Saturation |
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Voltage vs Collector Current |
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0.6 |
β = 10 |
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0.5 |
- 40 ºC |
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0.4 |
25 °C |
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0.3 |
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0.2 |
125 ºC |
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0.1 |
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0 |
0.1 |
1 |
1.5 |
0.01 |
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I C - COLLECTOR CURRENT (A) |
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40-BC807 / 25-BC807 / 16-BC807
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