BCW60D
©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
BCW60A/B/C/D
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 32 V
V
CEO
Collector-Emitter Voltage 32 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 100 mA
P
C
Collector Power Dissipation 350 mW
T
STG
Storage Temperature 150 °C
BCW60A/B/C/D
General Purpose Transistor
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
BCW60A/B/C/D
Electrical Characteristics T
a
=25°C unless otherwise noted
Marking Code
Symbol Parameter Tes t Condition Min. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage I
C
=2mA, I
B
=0 32 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=1µA, I
C
=0 5 V
I
CES
Collector Cut-off Current V
CE
=32V, V
BE
=0 20 nA
I
EBO
Emitter Cut-off Current V
EB
=4V, I
C
=0 20 nA
h
FE
DC Current Gain
: BCW60B
: BCW60C
: BCW60D
: BCW60A
: BCW60B
: BCW60C
: BCW60D
: BCW60A
: BCW60B
: BCW60C
: BCW60D
V
CE
=5V, I
C
=10µA
V
CE
=5V, I
C
=2mA
V
CE
=1V, I
C
=50mA
20
40
100
120
180
250
380
60
70
90
100
220
310
460
630
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=50mA, I
B
=1.25mA
I
C
=10mA, I
B
=0.25mA
0.55
0.35
V
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
=50mA, I
B
=1.25mA
I
C
=10mA, I
B
=0.25mA
0.7
0.6
1.05
0.85
V
V
V
BE
(on) Base-Emitter On Voltage V
CE
=5V, I
C
=2mA 0.55 0.75 V
C
ob
Output Capacitance V
CB
=10V, I
E
=0, f=1MHz 4.5 pF
f
T
Current Gain Bandwidth Product I
C
=10mA, V
CE
=5V, f=100MHz 125 MHz
NF Noise Figure I
C
=0.2mA, V
CE
=5V
R
G
=2KΩ, f=1KHz
6dB
t
ON
Turn On Time I
C
=10mA, I
B1
=1mA 150 ns
t
OFF
Turn Off Time V
BB
=3.6V, I
B2
=1mA
R1=R2=5KΩ,R
L
=990Ω
800 ns
Type BCW60A BCW60B BCW60C BCW 60D
Mark. AA AB AC AD
AA
Marking
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