Fairchild Semiconductor BDX34C, BDX34B, BDX34A, BDX34 Datasheet

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BDX34/A/B/C

Power Linear and Switching Applications

• High Gain General Purpose

• Power Darlington TR

• Complement to BDX33/33A/33B/33C respectively

 

 

1

TO-220

 

 

 

 

 

 

 

 

1.Base 2.Collector

3.Emitter

PNP Epitaxial Silicon Transistor

 

 

 

 

Absolute Maximum Ratings TC=25° C unless otherwise noted

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

 

Value

 

Units

 

 

 

 

 

 

VCBO

Collector-Base Voltage

 

 

 

 

 

: BDX34

 

- 45

 

V

 

: BDX34A

 

- 60

 

V

 

: BDX34B

 

- 80

 

V

 

: BDX34C

 

- 100

 

V

 

 

 

 

 

 

VCEO

Collector-Emitter Voltage

 

 

 

 

 

: BDX34

 

- 45

 

V

 

: BDX34A

 

- 60

 

V

 

: BDX34B

 

- 80

 

V

 

: BDX34C

 

- 100

 

V

 

 

 

 

 

 

IC

Collector Current (DC)

 

- 10

 

A

ICP

*Collector Current (Pulse)

 

- 15

 

A

IB

Base Current

 

- 0.25

 

A

PC

Collector Dissipation (TC=25° C)

 

70

 

W

TJ

Junction Temperature

 

150

 

° C

TSTG

Storage Temperature

 

- 65 ~ 150

 

° C

BDX34/A/B/C

©2000 Fairchild Semiconductor International

Rev. A, February 2000

Fairchild Semiconductor BDX34C, BDX34B, BDX34A, BDX34 Datasheet

Electrical Characteristics TC=25° C unless otherwise noted

Symbol

Parameter

Test Condition

Min.

Typ. Max.

Units

VCEO(sus)

* Collector-Emitter Sustaining Voltage

IC = -100mA, IB = 0

- 45

 

V

 

: BDX34

 

 

: BDX34A

 

- 60

 

V

 

: BDX34B

 

- 80

 

V

 

: BDX34C

 

- 100

 

V

 

 

 

 

 

 

VCER(sus)

* Collector-Emitter Sustaining Voltage

 

 

 

 

 

: BDX34

IC = -1 00mA, IB = 0

- 45

 

V

 

: BDX34A

RBE = 100Ω

- 60

 

V

 

: BDX34B

 

- 80

 

V

 

: BDX34C

 

- 100

 

V

 

 

 

 

 

 

VCEV(sus)

* Collector-Emitter Sustaining Voltage

IC = - 100mA, IB = 0

- 45

 

V

 

: BDX34

 

 

: BDX34A

VBE = - 1.5V

- 60

 

V

 

: BDX34B

 

- 80

 

V

 

: BDX34C

 

- 100

 

V

 

 

 

 

 

 

ICBO

Collector Cut-off Current

VCB = - 45V, IE = 0

 

- 0.2

mA

 

: BDX34

 

 

: BDX34A

VCB = - 60V, IE = 0

 

- 0.2

mA

 

: BDX34B

VCB = - 80V, IE = 0

 

- 0.2

mA

 

: BDX34C

VCB = - 100V, IE = 0

 

- 0.2

mA

ICEO

Collector Cut-off Current

 

 

 

 

 

: BDX34

VCE = - 22V, IB = 0

 

- 0.5

mA

 

: BDX34A

VCE = - 30V, IB = 0

 

- 0.5

mA

 

: BDX34B

VCE = - 40V, IB =0

 

- 0.5

mA

 

: BDX34C

VCE = - 50V, IB = 0

 

- 0.5

mA

IEBO

Emitter Cut-off Current

VEB = - 5V, IC = 0

 

- 5

mA

hFE

* DC Current Gain

VCE = - 3V, IC = - 4A

750

 

 

 

: BDX34/34A

 

 

 

: BDX34B/34C

VCE = - 3V, IC = - 3A

750

 

 

VCE(sat)

* Collector-Emitter Saturation Voltage

 

 

 

 

 

: BDX34/34A

IC = - 4A, IB = - 8mA

 

- 2.5

V

 

: BDX34B/34C

IC = - 3A, IB = - 6mA

 

- 2.5

V

VBE(on)

* Base-Emitter ON Voltage

VCE = - 3V, IC = - 4A

 

 

 

 

: BDX34/34A

 

- 2.5

V

 

: BDX34B/34C

VCE = - 3V, IC = - 3A

 

- 2.5

V

VF

* Parallel Diode Forward Voltage

IF = - 8A

 

- 4

V

* Pulse Test: PW=300 s, duty Cycle =1.5% Pulsed

BDX34/A/B/C

©2000 Fairchild Semiconductor International

Rev. A, February 2000

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