Fairchild Semiconductor BDW23C, BDW23B, BDW23A, BDW23 Datasheet

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BDW23/A/B/C

Hammer Drivers, Audio Amplifiers Applications

• Power Darlington TR

• Complement to BDW24, BDW24A, BDW24B and BDW24C respectively

 

 

1

TO-220

 

 

 

 

 

 

 

 

1.Base 2.Collector

3.Emitter

NPN Epitaxial Silicon Transistor

 

 

 

 

Absolute Maximum Ratings TC=25° C unless otherwise noted

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

 

Value

 

Units

 

 

 

 

 

 

VCBO

Collector-Base Voltage

 

 

 

 

 

: BDW23

 

45

 

V

 

: BDW23A

 

60

 

V

 

: BDW23B

 

80

 

V

 

: BDW23C

 

100

 

V

 

 

 

 

 

 

VCEO

Collector-Emitter Voltage

 

 

 

 

 

: BDW23

 

45

 

V

 

: BDW23A

 

60

 

V

 

: BDW23B

 

80

 

V

 

: BDW23C

 

100

 

V

 

 

 

 

 

 

VEBO

Emitter-Base Voltage

 

5

 

V

IC

Collector Current (DC)

 

6

 

A

ICP

*Collector Current (Pulse)

 

8

 

A

IB

Base Current

 

0.2

 

A

PC

Collector Dissipation (TC=25° C)

 

50

 

W

TJ

Junction Temperature

 

150

 

° C

TSTG

Storage Temperature

 

- 65 ~ 150

 

° C

BDW23/A/B/C

©2000 Fairchild Semiconductor International

Rev. A, February 2000

Fairchild Semiconductor BDW23C, BDW23B, BDW23A, BDW23 Datasheet

Electrical Characteristics TC=25° C unless otherwise noted

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

s

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

(sus)

Collector-Emitter Sustaining Voltage

 

 

 

 

 

CEO

 

: BDW23

IC = 100mA, IB = 0

45

 

 

V

 

 

 

 

 

 

: BDW23A

 

60

 

 

V

 

 

: BDW23B

 

80

 

 

V

 

 

: BDW23C

 

100

 

 

V

 

 

 

 

 

 

 

 

ICBO

 

Collector Cut-off Current

VCB = 45V, IE = 0

 

 

200

A

 

 

: BDW23

 

 

 

 

: BDW23A

VCB = 60V, IE = 0

 

 

200

A

 

 

: BDW23B

VCB = 80V, IE = 0

 

 

200

A

 

 

: BDW23C

VCB = 100V, IE = 0

 

 

200

A

ICEO

 

Collector Cut-off Current

VCE = 22V, IB = 0

 

 

500

A

 

 

: BDW23

 

 

 

 

: BDW23A

VCE = 30V, IB = 0

 

 

500

A

 

 

: BDW23B

VCE = 40V, IB = 0

 

 

500

A

 

 

: BDW23C

VCE = 50V, IB = 0

 

 

500

A

IEBO

 

Emitter Cut-off Current

VEB = 5V, IC = 0

 

 

2

mA

hFE

 

* DC Current Gain

VCE = 3V, IC = 1A

1000

 

 

 

 

 

 

VCE = 3V, IC = 2A

750

 

20000

 

 

 

 

VCE = 3V, IC = 6A

100

 

 

 

VCE(sat)

* Collector-Emitter Saturation Voltage

IC = 2A, IB = 8mA

 

 

2

V

 

 

 

IC = 6A, IB = 60mA

 

 

3

V

VBE(sat)

* Base-Emitter Saturation Voltage

IC = 2A, IB = 8mA

 

 

2.5

V

VBE(on)

* Base-Emitter ON Voltage

VCE = 3V, IC = 1A

 

 

2.5

V

 

 

 

VCE = 3V, IC = 6A

 

 

3

V

VF

 

* Parallel Diode Forward Voltage

IF = 2A

 

 

1.8

V

* Pulse Test: PW =300 s, duty Cycle =1.5% Pulsed

BDW23/A/B/C

©2000 Fairchild Semiconductor International

Rev. A, February 2000

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