BC237/238/239 |
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NPN EPITAXIAL SILICON TRANSISTOR |
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SWITCHING AND AMPLIFIER APPLICATIONS |
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TO-92 |
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∙ LOW NOISE: BC239 |
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ABSOLUTE MAXIMUM RATINGS (TA=25°C) |
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Characteristic |
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Symbol |
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Rating |
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Unit |
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Collector-Emitter Voltage |
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VCES |
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V |
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: BC237 |
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50 |
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V |
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: BC238/239 |
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30 |
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Collector-Emitter Voltage |
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VCEO |
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: BC237 |
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45 |
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V |
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: BC238/239 |
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25 |
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V |
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Emitter-Base Voltage |
: BC237 |
VEBO |
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6 |
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V |
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: BC238/239 |
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5 |
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V |
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Collector Current (DC) |
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IC |
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100 |
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mA |
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Collector Dissipation |
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PC |
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500 |
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mW |
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Junction Temperature |
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TJ |
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150 |
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°C |
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Storage Temperature |
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TSTG |
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-55 ~ 150 |
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°C |
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1. Collector 2. Base 3. Emitter |
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ELECTRICAL CHARACTERISTICS (TA=25°C) |
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Characteristic |
Symbol |
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Test Conditions |
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Min |
Typ |
Max |
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Unit |
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Collector-Emitter Breakdown Voltage |
BVCEO |
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IC=2mA, IB=0 |
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45 |
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:BC237 |
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V |
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: BC238/239 |
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IE=1μA, IC=0 |
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25 |
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V |
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Emitter Base Breakdown Voltage |
BVEBO |
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6 |
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V |
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: BC237 |
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: BC238/239 |
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5 |
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Collector Cut-off Current |
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ICES |
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VCE=50V, IB=0 |
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15 |
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nA |
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: BC237 |
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0.2 |
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: BC238/239 |
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VCE=30V, IB=0 |
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0.2 |
15 |
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nA |
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DC Current Gain |
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hFE |
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VCE=5V, IC=2mA |
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120 |
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800 |
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Collector-Emitter Saturation Voltage |
VCE (sat) |
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IC=10mA, IB=0.5mA |
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0.07 |
0.2 |
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V |
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IC=100mA, IB=5mA |
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0.2 |
0.6 |
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V |
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Collector Base Saturation Voltage |
VBE (sat) |
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IC=10mA, IB=0.5mA |
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0.73 |
0.83 |
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V |
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IC=100mA, IB=5mA |
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0.87 |
1.05 |
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V |
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Base Emitter On Voltage |
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VBE (on) |
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VCE=5V, IC=2mA |
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0.55 |
0.62 |
0.7 |
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V |
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Current Gain Bandwidth Product |
fT |
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VCE=3V, IC=0.5mA |
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85 |
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MHz |
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VCE=5V, IC=10mA |
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150 |
250 |
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Collector Base Capacitance |
CCBO |
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VCB=10V, f=1MHz |
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3.5 |
6 |
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pF |
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Emitter Base Capacitance |
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CEBO |
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VEB=0.5V, f=1MHz |
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pF |
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Noise Figure |
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: BC237/238 |
NF |
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VCE=5V, IC=0.2mA, |
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2 |
10 |
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dB |
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: BC239 |
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f=1KHz RG=2kohm |
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4 |
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dB |
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: BC239 |
NF |
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VCE=5V, IC=0.2mA |
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4 |
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dB |
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RG=2kohm, f=30~15KHz |
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hFE CLASSIFICATION |
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Classification |
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A |
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B |
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C |
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hFE |
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120-220 |
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180-460 |
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380-800 |
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Rev. B
ã1999 Fairchild Semiconductor Corporation
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