Fairchild Semiconductor BD681, BD679A, BD677A, BD675A Datasheet

BD675A/677A/679A/681

Medium Power Linear and Switching Applications

• Medium Power Darlington TR

• Complement to BD676A, BD678A, BD680A and BD682 respectively

NPN Epitaxial Silicon Transistor			1		TO-126
			1. Emitter 2.Collector				3.Base
Absolute Maximum Ratings TC=25° C unless otherwise noted
Symbol		Parameter			Value		Units
VCBO	Collector-Base Voltage	: BD675A			45			V
		: BD677A			60			V
		: BD679A			80			V
		: BD681			100			V
VCEO	Collector-Emitter Voltage	: BD675A			45			V
		: BD677A			60			V
		: BD679A			80			V
		: BD681			100			V
VEBO	Emitter-Base Voltage				5			V
IC	Collector Current (DC)				4			A
ICP	*Collector Current (Pulse)				6			A
IB	Base Current				100		mA
PC	Collector Dissipation (TC=25° C)				40			W
TJ	Junction Temperature				150			° C
TSTG	Storage Temperature				- 65 ~ 150			° C
Electrical Characteristics TC=25° C unless otherwise noted
Symbol	Parameter		Test Condition		Min. Typ.		Max. Units
VCEO(sus)	*Collector-Emitter Sustaining Voltage
		: BD675A	IC = 50mA, IB = 0		45			V
		: BD677A			60			V
		: BD679A			80			V
		: BD681			100			V
ICBO	Collector-Base Voltage	: BD675A	VCB = 45V, IE = 0				200	A
		: BD677A	VCB = 60V, IE = 0				200	A
		: BD679A	VCB = 80V, IE = 0				200	A
		: BD681	VCB = 100V, VBE = 0				200	A
ICEO	Collector Cut-off Current	: BD675A	VCE = 45V, VBE = 0				500	A
		: BD677A	VCE = 60V, VBE = 0				500	A
		: BD679A	VCE = 80V, VBE = 0				500	A
		: BD681	VCE = 100V, VBE = 0				500	A
IEBO	Emitter Cut-off Current		VEB = 5V, IC = 0				2	mA
hFE	* DC Current Gain	: BD675A/677A/679A	VCE = 3V, IC = 2A		750
		: BD681	VCE = 3V, IC = 1.5A		750
VCE(sat)	* Collector-Emitter Saturation Voltage		IC = 2A, IB = 40mA
		: BD675A/677A/679A					2.8	V
		: BD681	IC = 1.5A, IB = 30mA				2.5	V
VBE(on)	* Base-Emitter ON Voltage : BD675A/677A/679A		VCE = 3V, IC = 2A				2.5	V
		: BD681	VCE = 3V, IC = 1.5A				2.5	V

* Pulse Test: PW=300 s, duty Cycle=1.5% Pulsed

BD675A/677A/679A/681

©2000 Fairchild Semiconductor International

Rev. A, February 2000

Typical Characteristics

	10000
			VCE = 3V
GAIN
, DC CURRENT	1000
FE
h
	100
	0.1	1	10
		IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

	4.0
	3.8	VCE	= 3V
	3.6
	3.4
CURRENT	3.2
	3.0
	2.8
	2.6
	2.4
	2.2
COLLECTOR
	2.0
	1.8
	1.6
	1.4
	1.2
	1.0
[A],
	0.8
	0.6
C
I
	0.4
	0.2
	0.0
	0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0

VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter On Voltage

	50
DISSIPATION	40
	30
[W], POWER	20
	10
C
P
	0
	0	25	50	75	100	125	150	175	200
			TC[oC], CASE TEMPERATURE

Figure 5. Power Derating

VOLTAGESATURATION(sat)[V],	2.4			Ic = 250 IB	BD675A/677A/679A/681
	2.0
	1.6
	1.2
	0.8
CE	0.4
V
	0.0
	0.1	1		10
		IC[A], COLLECTOR CURRENT
Figure 2. Collector-Emitter Saturation Voltage
	10
	IC(max). Pulsed		10 s
	IC(max). Continuous
CURRENT
		DC
COLLECTOR			100	s
	1
[A],		BD675A	1ms
		BD677A
C
I		BD679A
			10ms
	0.1	BD681
	1	10	100	1000

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 4. Safe Operating Area

©2000 Fairchild Semiconductor International

Rev. A, February 2000