Fairchild Semiconductor BU407, BU407H Datasheet

BU407/407H

High Voltage Switching

• Use In Horizontal Deflection Output Stage

1	TO-220

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25° C unless otherwise noted

Symbol	Parameter	Value	Units
VCBO	Collector-Base Voltage	330	V
VCEO	Collector-Emitter Voltage	150	V
VEBO	Emitter-Base Voltage	6	V
IC	Collector Current (DC)	7	A
ICP	Collector Current (Pulse)	10	A
IB	Base Current	4	A
PC	Collector Dissipation (TC=25° C)	60	W
TJ	Junction Temperature	150	° C
TSTG	Storage Temperature	- 65 ~ 150	° C

Electrical Characteristics TC=25° C unless otherwise noted

Symbol	Parameter	Test Condition	Min.	Max.	Units
ICES	Collector Cut-off Current	VCE = 330V, VBE = 0		5	mA
		VCE = 200V, VBE = 0		100	A
		VCE = 200V, VBE = 0 @ TC= 150° C		1	mA
IEBO	Emitter Cut-off Current	VBE = 6V, IC = 0		1	mA
VCE(sat)	Collector-Emitter Saturation Voltage	IC = 5A, IB = 0.5A
	: BU407			1	V
	: BU407H	IC = 5A, IB = 0.8A		1	V
VBE(sat)	Base-Emitter Saturation Voltage	IC = 5A, IB = 0.5A		1.2	V
	: BU407
	: BU407H	IC = 5A, IB = 0.8A		1.2	V
fT	Current Gain Bandwidth Product	VCE = 10V, IC = 0.5A	10		MHz
tOFF	Turn OFF Time				s
	: BU407	IC = 5A, IB = 0.5A		0.75
	: BU407H	IC = 5A, IB = 0.8A		0.4	s

BU407/407H

©2000 Fairchild Semiconductor International

Rev. A, February 2000

Typical Characteristics

	5										IB = 160mA
					=180mA
		IB	=200mA IB			IB =		140mA
									120mA
CURRENT	4						IB =
									IB	=	100mA
											IB	= 80mA
	3											IB =	60mA
[A], COLLECTOR
													IB	= 40mA
	2
														IB	=	20mA
	1
C
I
	0
	0	1		2	3	4			5		6	7		8		9	10

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

VOLTAGE	10000
					IC = 10 IB
(sat)[V]SATURATION	1000		VBE(sat)
	100
BE
V
(sat)[V],			VCE(sat)
CE
V	10
	1	10	100	1000	10000
		IC[mA], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

CURRENT		IC Max. (Pulsed)
	10	IC Max. (Continuous)
		Dissipation		1ms
COLLECTOR
				10ms
				100ms
			Limited
	1
				S/b
[A],				Limited	MAX.
C
I
					CE
	0.1				V
	1	10		100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Safe Operating Area

	1000					BU407/407H
GAINCURRENT					VCE = 5V
	100
DC,	10
FE
h
	1
	1	10	100	1000		10000
		IC[mA], COLLECTOR CURRENT

Figure 2. DC current Gain

	1000
			f = 1MHz
CAPACITANCE	100
[pF],	10
ob
C
	1
	1	10	100

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 4. Collector Output Capacitance

	80
	70
DISSIPATIOAN	60
	50
	40
POWER	30
[W],	20
D
P	10
	0
	0	25	50	75	100	125	150	175	200
			TC[oC], CASE TEMPERATURE

Figure 6. Power Derating

©2000 Fairchild Semiconductor International

Rev. A, February 2000