BD242C
©2000 Fairchild Semiconductor International Rev. A, February 2000
BD242/A/B/C
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle≤2% Pulsed
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage
: BD242
: BD242A
: BD242B
: BD242C
- 45
- 60
- 80
- 100
V
V
V
V
V
CER
Collector-Emitter Voltage
: BD242
: BD242A
: BD242B
: BD242C
- 55
- 70
- 90
- 115
V
V
V
V
V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 3 A
I
CP
*Collector Current (Pulse) - 5 A
I
B
Base Current - 1 A
P
C
Collector Dissipation (T
C
=25°C) 40 W
T
J
Junction Temperature 150 °C
T
STG
Storage T emperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) * Collector-Emitter Sustainin g Voltage
: BD242
: BD242A
: BD242B
: BD242C
I
C
= - 30mA, I
B
= 0 - 45
- 60
- 80
- 100
V
V
V
V
I
CEO
Collector Cut-off Current : BD242/A
: BD242B/C
V
CE
= - 30V, I
B
= 0
V
CE
= - 60V, I
B
= 0
- 0.3
- 0.3
mA
mA
I
CES
Collector Cut-off Current : BD242
: BD242A
: BD242B
: BD242C
V
CE
= - 45V, V
BE
= 0
V
CE
= - 60V, V
BE
= 0
V
CE
= - 80V, V
BE
= 0
V
CE
= - 100V, V
BE
= 0
- 0.2
- 0.2
- 0.2
- 0.2
mA
mA
mA
mA
I
EBO
Emitter Cut-off Current V
EB
= - 5V , I
C
= 0 - 1 mA
h
FE
* DC Current Gain V
CE
= - 4V , I
C
= - 1A
V
CE
= - 4V , I
C
= - 3A
25
10
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= - 3A, I
B
= - 0.6A - 1.2 V
V
BE
(on) * Base-Emitter ON Volt age V
CE
= - 4V , I
C
= - 3A - 1.8 V
BD242/A/B/C
Medium Power Linear and Switching
Applications
• Complement to BD241/A/B/C respectively
1.Base 2.Collector 3.Emitter
1
TO-220
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