Fairchild Semiconductor BD438, BD436, BD434 Datasheet

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BD434/436/438

Medium Power Linear and Switching Applications

• Complement to BD433, BD435 and BD437 respectively

 

1

 

TO-126

 

1. Emitter

2.Collector

3.Base

PNP Epitaxial Silicon Transistor

 

 

 

Absolute Maximum Ratings TC=25° C unless otherwise noted

 

 

 

 

 

 

 

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-

22

V

 

: BD434

 

: BD436

-

32

V

 

: BD438

-

45

V

VCES

Collector-Emitter Voltage

-

22

V

 

: BD434

 

: BD436

-

32

V

 

: BD438

-

45

V

VCEO

Collector-Emitter Voltage

-

22

V

 

: BD434

 

: BD436

-

32

V

 

: BD438

-

45

V

VEBO

Emitter-Base Voltage

 

- 5

V

IC

Collector Current (DC)

 

- 4

A

ICP

*Collector Current (Pulse)

 

- 7

A

IB

Base Current

 

- 1

A

PC

Collector Dissipation (TC=25° C)

 

36

W

TJ

Junction Temperature

150

° C

TSTG

Storage Temperature

- 65

~ 150

° C

BD434/436/438

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

Fairchild Semiconductor BD438, BD436, BD434 Datasheet

Electrical Characteristics TC=25° C unless otherwise noted

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V

(sus)

Collector-Emitter Sustaining Voltage

 

 

 

 

 

CEO

 

: BD434

IC = - 100mA, IB = 0

- 22

 

 

V

 

 

 

 

 

 

: BD436

 

- 32

 

 

V

 

 

: BD438

 

- 45

 

 

V

ICBO

 

Collector Cut-off Current

VCB = - 22V, IE = 0

 

 

 

 

 

 

: BD434

VCB = - 32V, IE = 0

 

 

- 100

A

 

 

: BD436

VCB = - 45V, IE = 0

 

 

- 100

A

 

 

: BD438

 

 

 

- 100

A

ICEO

 

Collector Cut-off Current

VCE = - 22V, VBE = 0

 

 

- 100

A

 

 

: BD434

 

 

 

 

: BD436

VCE = - 32V, VBE = 0

 

 

- 100

A

 

 

: BD438

VCE = - 45V, VBE = 0

 

 

- 100

A

IEBO

 

Emitter Cut-off Current

VEB = - 5V, IC = 0

 

 

- 1

mA

hFE

 

* DC Current Gain

VCE = - 5V, IC = - 10mA

40

140

 

 

 

 

: BD434/436

 

 

 

 

: BD438

 

30

140

 

 

 

 

: ALL DEVICE

VCE = - 1V, IC = - 500mA

85

140

 

 

 

 

: BD434/436

VCE = - 1V, IC = - 2A

50

 

 

 

 

 

: BD438

 

40

 

 

 

VCE(sat)

* Collector-Emitter Saturation Voltage

IC = - 2A, IB = - 0.2A

 

- 0.2

- 0.5

V

 

 

: BD434

 

 

 

: BD436

 

 

- 0.2

- 0.5

V

 

 

: BD438

 

 

- 0.2

- 0.6

V

VBE(on)

* Base-Emitter ON Voltage

VCE = - 1V, IC = - 2A

 

 

- 1.1

V

 

 

: BD434

 

 

 

 

: BD436

 

 

 

- 1.1

V

 

 

: BD438

 

 

 

- 1.2

V

fT

 

Current Gain Bandwidth Product

VCE = - 1V, IC = - 250mA

3

 

 

MHz

* Pulse Test: PW=300 s, duty Cycle=1.5% Pulsed

BD434/436/438

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

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