Fairchild Semiconductor BD243C, BD243, BD243A Datasheet

BD243/A/B/C

Medium Power Linear and Switching Applications

• Complement to BD244, BD244A, BD244B and BD244C respectively

1

TO-220

1.Base

2.Collector

3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25° C unless otherwise noted

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

: BD243

45

V

: BD243A

60

V

: BD243B

80

V

: BD243C

100

V

VCEO

Collector-Emitter Voltage

: BD243

45

V

: BD243A

60

V

: BD243B

80

V

: BD243C

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current (DC)

6

A

ICP

*Collector Current (Pulse)

10

A

IB

Base Current

2

A

PC

Collector Dissipation (TC=25° C)

65

W

TJ

Junction Temperature

150

° C

TSTG

Storage Temperature

- 65 ~ 150

° C

Electrical Characteristics TC=25° C unless otherwise noted

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V

(sus)

* Collector-Emitter Sustaining Voltage

CEO

: BD243

IC=30mA, IB=0

45

V

: BD243A

60

V

: BD243B

80

V

: BD243C

100

V

ICEO

Collector Cut-off Current

: BD243/243A

VCE = 30V, IB = 0

0.7

mA

: BD243B/243C

VCE = 60V, IB = 0

0.7

mA

ICES

Collector Cut-off Current

: BD243

VCE = 45V, VBE = 0

0.4

mA

: BD243A

VCE = 60V, VBE = 0

0.4

mA

: BD243B

VCE = 80V, VBE = 0

0.4

mA

: BD243C

VCE = 100V, VBE = 0

0.4

mA

IEBO

Emitter Cut-off Current

VEB = 5V, IC = 0

1

mA

hFE

*DC Current Gain

VCE = 4V, IC = 0.3A

30

VCE = 4V, IC = 3A

15

V

(sat)

*Collector-Emitter Saturation Voltage

I

= 6A, I

= 1A

1.5

V

CE

C

B

V

(on)

*Base-Emitter ON Voltage

V

= 4V, I = 6A

2

V

BE

CE

C

* Pulse Test :PW=300

s, duty Cycle<20% Pulsed

BD243/A/B/C

©2000 Fairchild Semiconductor International

Rev. A, February 2000

Typical Characteristics

	1000
				VCE = 2V
GAIN
, DC CURRENT	100
FE
h
	10
	0.01	0.1	1	10
		IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

	1
VOLTAGE		IC = 10.1 IB
(sat)(V), SATURATION	0.1
BE
V
	0.01
	0.1	1	10
		IC[A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage

	80
	70
DISSIPATION	60
	50
	40
POWER	30
[W],	20
C
P	10
	0
	0	25	50	75	100	125	150	175	200
			T[oC], CASE TEMPERATURE

Figure 5. Power Derating

VOLTAGE	1.8					BD243/A/B/C
	1.7		IC = 10.1 IB
	1.6
	1.5
SATURATION	1.4
	1.0
	1.3
	1.2
(sat)(V),	1.1
	0.9
	0.8
BE	0.7
V	0.6
	0.5
	0.1	1	10
		IC[A], COLLECTOR CURRENT
	Figure 2. Base-Emitter Saturation Voltage
	100
CURRENT	10	IC(max)	1
			10	s
		10	m
COLLECTOR			s
		m	100		s
		s
	1		DC
[A],			BD243
			BD243A
I
C
			BD243B
	0.1		BD243C
	1	10	100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 4. Safe Operating Area

©2000 Fairchild Semiconductor International

Rev. A, February 2000