BD140
BD136/138/140
Medium Power Linear and Switching
Applications
• Complement to BD135, BD137 and BD139 respectively
BD136/138/140
1
TO-126
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
IC
ICP
IB
PC
P
C
T
J
T
STG
Collector-Base Voltage : BD136
Collector-Emitter Voltage : BD136
Emitter-Base Voltage - 5 V
Collector Current (DC) - 1.5 A
Collector Current (Pulse) - 3.0 A
Base Current - 0.5 A
Collector Dissipation (TC=25°C) 12.5 W
Collector Dissipation (Ta=25°C) 1.25 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage
CEO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
(sat) * Collector-Emitter Saturation Voltage IC = - 500mA, IB = - 50mA - 0.5 V
V
CE
(on) * Base-Emitter ON Volt age V
V
BE
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
TC=25°C unless otherwise noted
: BD138
: BD140
: BD138
: BD140
TC=25°C unless otherwise noted
: BD136
: BD138
= - 30mA, IB = 0 - 45
I
C
: BD140
= - 30V , IE = 0 - 0.1 µA
CB
= - 5V, IC = 0 - 10 µA
EB
= - 2V , IC = - 5mA
CE
= - 2V , IC = - 0.5A
V
CE
V
= - 2V , IC = - 150mA
CE
= - 2V , IC = - 0.5A - 1 V
CE
- 45
- 60
- 80
- 45
- 60
- 80
- 60
- 80
25
25
40 250
V
V
V
V
V
V
V
V
V
hFE Classificntion
Classification 6 10 16
h
FE3
©2000 Fairchild Semiconductor International Rev. A, February 2000
40 ~ 100 63 ~ 160 100 ~ 250
Typical Characteristics
BD136/138/140
100
90
80
70
60
50
40
30
, DC CURRENT GAIN
FE
20
h
10
0
-10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
-1.1
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
[V], BASE-EMITTER VOLTAGE
-0.3
BE
V
-0.2
-0.1
-1E-3 -0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
(sat)
BE
B
V
= 10 I
C
I
(on)
BE
V
= -5V
CE
V
VCE = -2V
-500
-450
-400
-350
-300
-250
-200
-150
-100
(sat)[mV], SATURATION VOLTAGE
CE
-50
V
-0
-1E-3 -0.01 -0.1 -1 -10
B
= 20 I
C
I
B
= 10 I
C
I
IC[A], COLLECTOR CURRENT
-10
IC MAX. (Pulsed)
IC MAX. (Continuous)
-1
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-1 -10 -100
10us
100us
1ms
DC
BD140
BD138
BD136
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Voltage Figure 4. Safe Operating Area
20.0
17.5
15.0
12.5
10.0
7.5
5.0
[W], POWER DISSIPATION
C
P
2.5
0.0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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