BD157/158/159
Low Power Fast Switching Output Stages
• For T.V Radio Audio Output Amplifiers
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TO-126 |
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1. Emitter 2.Collector |
3.Base |
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NPN Epitxial Silicon Transistor |
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Absolute Maximum Ratings TC=25° C unless otherwise noted |
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Symbol |
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Parameter |
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Value |
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Units |
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VCBO |
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Collector-Base Voltage |
: BD157 |
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275 |
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V |
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: BD158 |
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325 |
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V |
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: BD159 |
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375 |
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V |
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VCEO |
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Collector-Emitter Voltage |
: BD157 |
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250 |
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V |
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: BD158 |
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300 |
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V |
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: BD159 |
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350 |
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V |
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VEBO |
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Emitter-Base Voltage |
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5 |
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V |
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IC |
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Collector Current (DC) |
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0.5 |
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A |
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ICP |
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*Collector Current (Pulse) |
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1.0 |
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A |
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IB |
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Base Current |
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0.25 |
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A |
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PC |
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Collector Dissipation (TC=25° C) |
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20 |
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W |
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TJ |
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Junction Temperature |
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50 |
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° C |
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TSTG |
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Storage Temperature |
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- 65 ~ 150 |
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° C |
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Electrical Characteristics TC=25° C unless otherwise noted |
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Symbol |
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Parameter |
Test Condition |
Min. Typ. |
Max. |
Units |
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BVCEO |
*Collector-Emitter Breakdown Voltage |
IC = 1mA, IB = 0 |
250 |
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V |
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: BD157 |
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: BD158 |
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300 |
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V |
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: BD159 |
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350 |
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V |
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ICBO |
Collector Cut-off Current |
VCB = 275V, IE = 0 |
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100 |
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A |
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: BD157 |
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: BD158 |
VCB = 325V, IE = 0 |
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100 |
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A |
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: BD159 |
VCB = 375V, IE = 0 |
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100 |
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A |
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IEBO |
Emitter Cut-off Current |
VEB = 5V, IC = 0 |
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100 |
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A |
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hFE |
* DC Current Gain |
VCE = 10V, IC = 50mA |
30 |
240 |
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* Pulse Test: PW=300 s, duty Cycle=1.5% Pulsed
BD157/158/159
©2001 Fairchild Semiconductor Corporation |
Rev. A1, June 2001 |
Typical Characteristics
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1000 |
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VCE = 10V |
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GAIN |
100 |
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CURRENT |
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, DC |
10 |
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FE |
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h |
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1 |
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01E.0001-4 |
01E.001-3 |
0.01 |
0.1 |
1 |
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IC[A], COLLECTOR CURRENT |
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Figure 1. DC current Gain
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10 |
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CURRENT |
1 |
IC MAX. (Pulsed) |
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10 s |
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500 |
100 s |
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1ms |
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s |
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COLLECTOR |
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DC |
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0.1 |
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[A], |
0.01 |
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C |
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BD157 |
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I |
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BD158 |
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BD159 |
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1E-3 |
10 |
100 |
1000 |
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1 |
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
VOLTAGE |
1.4 |
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BD157/158/159 |
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2.0 |
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IC = 10 IB |
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1.8 |
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SATURATION |
1.6 |
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1.2 |
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1.0 |
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(sat)[V], |
0.8 |
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0.4 |
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0.6 |
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CE |
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V |
0.2 |
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0.0 |
1E-3 |
0.01 |
0.1 |
1 |
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1E-4 |
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IC[A], COLLECTOR CURRENT |
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Figure 2. Collector-Emitter Saturation Voltage
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25 |
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DISSIPATION |
20 |
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15 |
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[W], POWER |
10 |
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5 |
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C |
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P |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
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0 |
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TC[oC], CASE TEMPERATURE |
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Figure 4. Power Derating
©2001 Fairchild Semiconductor Corporation |
Rev. A1, June 2001 |
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