Analog Devices AD587UQ, AD587TQ, AD587SQ, AD587LQ, AD587LN Datasheet

a		High Precision
		10 V Reference
		AD587

FEATURES

Laser Trimmed to High Accuracy: 10.000 V 65 mV (L and U Grades)

Trimmed Temperature Coefficient: 5 ppm/8C max, (L and U Grades)

Noise Reduction Capability

Low Quiescent Current: 4 mA max Output Trim Capability

MIL-STD-883 Compliant Versions Available

FUNCTIONAL BLOCK DIAGRAM

+VI N	NOISE
	REDUCTION
2	8
	RS
	A1	6	VOUT
		RF
	RT
		5	TRIM
	RI	AD587
	4
	GND

NOTE:

PINS 1,3, AND 7 ARE INTERNAL TEST POINTS. NO CONNECTIONS TO THESE POINTS.

PRODUCT DESCRIPTION

The AD587 represents a major advance in the state-of-the-art in monolithic voltage references. Using a proprietary ion-implanted buried Zener diode and laser wafer trimming of high stability thin-film resistors, the AD587 provides outstanding performance at low cost.

The AD587 offers much higher performance than most other 10 V references. Because the AD587 uses an industry standard pinout, many systems can be upgraded instantly with the AD587. The buried Zener approach to reference design provides lower noise and drift than bandgap voltage references. The AD587 offers a noise reduction pin which can be used to further reduce the noise level generated by the buried Zener.

The AD587 is recommended for use as a reference for 8-, 10-, 12-, 14or 16-bit D/A converters which require an external precision reference. The device is also ideal for successive approximation or integrating A/D converters with up to 14 bits of accuracy and, in general, can offer better performance than the standard on-chip references.

The AD587J, K and L are specified for operation from 0°C to +70°C, and the AD587S, T and U are specified for –55°C to +125°C operation. All grades are available in 8-pin cerdip. The J and K versions are also available in an 8-pin Small Outline IC (SOIC) package for surface mount applications, while the J, K, and L grades also come in an 8-pin plastic package.

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Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

PRODUCT HIGHLIGHTS

1.Laser trimming of both initial accuracy and temperature coefficients results in very low errors over temperature with-

out the use of external components. The AD587L has a maximum deviation from 10.000 V of ±8.5 mV between 0°C and +70°C, and the AD587U guarantees ±14 mV maximum total error between –55°C and +125°C.

2.For applications requiring higher precision, an optional fine trim connection is provided.

3.Any system using an industry standard pinout 10 volt reference can be upgraded instantly with the AD587.

4.Output noise of the AD587 is very low, typically 4 V p-p. A noise reduction pin is provided for additional noise filtering using an external capacitor.

5.The AD587 is available in versions compliant with MIL- STD-883. Refer to the Analog Devices Military Products Databook or current AD587/883B data sheet for detailed specifications.

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Tel: [phone]	World Wide Web Site: http://www.analog.com
Fax: [phone]	© Analog Devices, Inc., 2000

AD587–SPECIFICATIONS (TA = +258C, VIN = +15 V unless otherwise noted)

Model		AD587J/S			AD587K/T			AD587L/U
	Min	Typ	Max	Min	Typ	Max	Min	Typ	Max	Units
OUTPUT VOLTAGE	9.990		10.010	9.995		10.005	9.995		10.005	V
OUTPUT VOLTAGE DRIFT1
0°C to +70°C			20			10			5	ppm/°C
–55°C to +125°C			20			10			5
GAIN ADJUSTMENT	+3			+3			+3			%
	–1			–1			–1
LINE REGULATION1
13.5 V ≤ + VIN ≤ 36 V										±V/V
TMIN to TMAX			100			100			100
LOAD REGULATION1
Sourcing 0 < IOUT < 10 mA										±V/mA
TMIN to TMAX			100			100			100
Sourcing –10 < IOUT < 0 mA2
TMIN to TMAX			100			100			100
QUIESCENT CURRENT		2	4		2	4		2	4	mA
POWER DISSIPATION		30			30			30		mW
OUTPUT NOISE										V p-p
0.1 Hz to 10 Hz		4			4			4
Spectral Density, 100 Hz		100			100			100		nV/√Hz
LONG-TERM STABILITY		15			15			15		± ppm/1000 Hr.
SHORT-CIRCUIT CURRENT-TO-GROUND		30	70		30	70		30	70	mA
SHORT-CIRCUIT CURRENT-TO-VIN		30	70		30	70		30	70	mA
TEMPERATURE RANGE										°C
Specified Performance (J, K, L)	0		+70	0		+70	0		+70
Operating Performance (J, K, L)3	–40		+85	–40		+85	–40		+85
Specified Performance (S, T, U)	–55		+125	–55		+125	–55		+125
Operating Performance (S, T, U)3	–55		+125	–55		+125	–55		+125

NOTES

1Spec is guaranteed for all packages and grades. Cerdip packaged parts are 100% production test. 2Load Regulation (Sinking) specification for SOIC (R) package is ±200 V/mA.

3The operating temperature ranged is defined as the temperatures extremes at which the device will still function. Parts may deviate from their specified performance outside their specified temperature range.

Specifications subject to change without notice.

ORDERING GUIDE

	Initial	Temperature	Temperature	Package
Model1	Error	Coefficient	Range	Options2
AD587JQ	10 mV	20 ppm/°C	0°C to +70°C	Q-8
AD587JR	10 mV	20 ppm/°C	0°C to +70°C	SO-8
AD587JN	10 mV	20 ppm/°C	0°C to +70°C	N-8
AD587KQ	5 mV	10 ppm/°C	0°C to +70°C	Q-8
AD587KR	5 mV	10 ppm/°C	0°C to +70°C	SO-8
AD587KN	5 mV	10 ppm/°C	0°C to +70°C	N-8
AD587LQ	5 mV	5 ppm/°C	0°C to +70°C	Q-8
AD587LN	5 mV	5 ppm/°C	0°C to +70°C	N-8
AD587SQ	10 mV	20 ppm/°C	–55°C to +125°C	Q-8
AD587TQ	10 mV	10 ppm/°C	–55°C to +125°C	Q-8
AD587UQ	5 mV	5 ppm/°C	–55°C to +125°C	Q-8
AD587JCHIPS	10 mV	20 ppm/°C	0°C to +70°C

NOTES

1For details on grade and package offerings screened in accordance with MIL-STD-883, refer to the Analog Devices Military Products Databook or current AD587/883B data sheet.

2N = Plastic DIP; Q = Cerdip; SO = SOIC.

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AD587

ABSOLUTE MAXIMUM RATINGS*

VIN to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V Power Dissipation (+25°C) . . . . . . . . . . . . . . . . . . . . . 500 mW

Storage Temperature . . . . . . . . . . . . . . . . . . . –65°C to +150°C Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . +300°C Package Thermal Resistance

θJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22°C/W θJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110°C/W Output Protection: Output safe for indefinite short to ground and

momentary short to VIN.

*Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

PIN CONFIGURATION

							NOISE
	TP*	1				8	REDUCTION
	+VI N		AD587				TP*
		2				7
			TOP VIEW
	TP*	3	(Not to Scale)			6	VOUT
	GND						TRIM
		4				5

*TP DENOTES FACTORY TEST POINT. NO CONNECTIONS SHOULD BE MADE TO THESE PINS.

The following specifications are tested at the die level for AD587JCHIPS. These die are probed at +25°C only. DIE SPECIFICATIONS (TA = +25°C, VIN = +15 V unless otherwise noted)

	AD587JCHIPS			DIE LAYOUT
Parameter	Min Typ	Max	Units
Output Voltage	9.990	10.010	V
Gain Adjustment	–1	3	%
Line Regulation			±µV/V
13.5 V < + VIN < 36 V		100
Load Regulation			µV/mA
Sourcing 0 < IOUT < 10 mA		100
Sinking –10 < IOUT < 0 mA		100	µV/mA
Quiescent Current	2	4	mA
Short-Circuit Current-to-Ground		70	mA
Short-Circuit Currrent-to-VOUT		70	mA

Die Size: 0.081 × 0.060 Inches

NOTES

1Both VOUT pads should be connected to the output. 2Sense and force grounds must be tied together.

Die Thickness: The standard thickness of Analog Devices Bipolar dice is 24 mils ± 2 mils. Die Dimensions: The dimensions given have a tolerance of ± 2 mils.

Backing: The standard backside surface is silicon (not plated). Analog Devices does not recommend gold-backed dice for most applications.

Edges: A diamond saw is used to separate wafers into dice thus providing perpendicular edges halfway through the die.

In contrast to scribed dice, this technique provides a more uniform die shape and size . The perpendicular edges facilitate handling (such as tweezer pick-up) while the uniform shape and size simplifies substrate design and die attach.

Top Surface: The standard top surface of the die is covered by a layer of glassivation . All areas are covered except bonding pads and scribe lines.

Surface Metalization: The metalization to Analog Devices bipolar dice is aluminum. Minimum thickness is 10,000Å.

Bonding Pads: All bonding pads have a minimum size of 4 mils by 4 mils. The passivation windows have 3.5 mils by 3.5 mils minimum.

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