TEXAS INSTRUMENTS TPS79301, TPS79318, TPS79325, TPS79328, TPS793285 Technical data

			TPS79301, TPS79318
			TPS79325, TPS79328, TPS793285
www.ti.com			TPS79330, TPS79333, TPS793475
			SLVS348H –JULY 2001 –REVISED OCTOBER 2004

ULTRALOW-NOISE, HIGH PSRR, FAST RF 200-mA LOW-DROPOUT LINEAR REGULATORS IN NanoStar™ WAFER CHIP SCALE AND SOT23

FEATURES

∙200-mA RF Low-Dropout Regulator With Enable

∙Available in 1.8-V, 2.5-V, 2.8-V, 2.85-V, 3-V, 3.3-V, 4.75-V, and Adjustable (1.22-V to 5.5-V)

∙High PSRR (70 dB at 10 kHz)

∙Ultralow-Noise (32 µV RMS, TPS79328)

∙Fast Start-Up Time (50 µs)

∙Stable With a 2.2-µF Ceramic Capacitor

∙Excellent Load/Line Transient Response

∙Very Low Dropout Voltage (112 mV at Full Load, TPS79330)

∙5- and 6-Pin SOT23 (DBV) and NanoStar Wafer Chip Scale (YEQ) Packages

APPLICATIONS

∙RF: VCOs, Receivers, ADCs

∙Audio

∙Cellular and Cordless Telephones

∙ Bluetooth™, Wireless LAN

∙Handheld Organizers, PDAs

DESCRIPTION

The TPS793xx family of low-dropout (LDO) low-power linear voltage regulators features high power-supply rejection ratio (PSRR), ultralow-noise, fast start-up, and excellent line and load transient responses in NanoStar wafer chip scale and SOT23 packages. NanoStar packaging gives an ultrasmall footprint as well as an ultralow profile and package weight, making it ideal for portable applications such as handsets and PDAs. Each device in the family is stable, with a small 2.2-µF ceramic capacitor on the output. The TPS793xx family uses an advanced, proprietary BiCMOS fabrication process to yield extremely low dropout voltages (e.g., 112 mV at 200 mA, TPS79330). Each device achieves fast start-up times (approximately 50 µs with a 0.001-µF bypass capacitor) while consuming very low quiescent current (170 µA typical). Moreover, when the device is placed in standby mode, the supply current is reduced to less than 1 µA. The TPS79328 exhibits approximately 32 µVRMS of output voltage noise at 2.8-V output with a 0.1-µF bypass capacitor. Applications with analog components that are noise-sensitive, such as portable RF electronics, benefit from the high PSRR and low-noise features as well as the fast response time.

	DBV PACKAGE
	(TOP VIEW)					TPS79328
IN	1	5	OUT
					OUTPUT SPECTRAL NOISE DENSITY
GND	2						vs
						FREQUENCY
	3	4			0.30
EN			NR	√Hz)
							VIN = 3.8 V
	Fixed Option
							COUT = 2.2 μF
				V/(μ	0.25
							CNR = 0.1 μF
	DBV PACKAGE			Density
	(TOP VIEW)				0.20
IN			OUT
	1	6		Noise
GND	2	5	FB		0.15		IOUT = 1 mA
	Adjustable Option			Spectral			IOUT = 200 mA
EN	3	4	NR		0.10
				Output
	YEQ				0.05
	PACKAGE
	(TOP VIEW)				0
	IN		OUT
		C1			100	1 k	10 k	100 k
	C3					Frequency (Hz)
		B2	NR
	A3	A1	GND
	EN

TPS79328

RIPPLE REJECTION

				vs
			FREQUENCY
	100
	90				IOUT = 200 mA
(dB)	80
	70
Rejection	60
	50
Ripple	40	IOUT = 10 mA
	30
	20	VIN = 3.8 V
	10	COUT = 10 μF
	0	CNR = 0.01 μF
	10	100	1 k	10 k	100 k	1 M	10 M

Frequency (Hz)

Figure 1.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Bluetooth is a trademark of Bluetooth Sig, Inc.

NanoStar is a trademark of Texas Instruments.

UNLESS OTHERWISE NOTED this document contains PRO-	Copyright © 2001–2004, Texas Instruments Incorporated
DUCTION DATA information current as of publication date. Prod-
ucts conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily
include testing of all parameters.

	TPS79301, TPS79318
	TPS79325, TPS79328, TPS793285
	TPS79330, TPS79333, TPS793475	www.ti.com
	SLVS348H –JULY 2001 –REVISED OCTOBER 2004

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

AVAILABLE OPTIONS(1) (2)

	PRODUCT	VOLTAGE	PACKAGE	TJ	SYMBOL	PART NUMBER
	TPS79301	1.22 V to 5.5 V	SOT23 (DBV)		PGVI	TPS79301DBVR
	TPS79318	1.8 V	SOT23 (DBV)		PHHI	TPS79318DBVR
			CSP (YEQ)		E3	TPS79318YEQ
	TPS79325	2.5 V	SOT23 (DBV)		PGWI	TPS79325DBVR
			CSP (YEQ)		E4	TPS79325YEQ
	TPS79328	2.8 V	SOT23 (DBV)		PGXI	TPS79328DBVR
			CSP (YEQ)	-40°C to +125°C	E2	TPS79328YEQ
	TPS793285	2.85 V	SOT23 (DBV)		PHII	TPS793285DBVR
			CSP (YEQ)		E5	TPS793285YEQ
	TPS79330	3 V	SOT23 (DBV)		PGYI	TPS79330DBVR
			CSP (YEQ)		E6	TPS79330YEQ
	TPS79333	3.3 V	SOT23 (DBV)		PHUI	TPS79333DBVR
	TPS793475	4.75 V	SOT23 (DBV)		PHJI	TPS793475DBVR

(1)For the most current package and ordering information, see the Package Option Addendum located at the end of this data sheet.

(2)DBVR indicates tape and reel of 3000 parts. YEQR indicates tape and reel of 3000 parts. YEQT indicates tape and reel of 250 parts.

ABSOLUTE MAXIMUM RATINGS

over operating temperature range (unless otherwise noted)(1)

	UNIT
VIN range	-0.3 V to 6 V
VEN range	-0.3 V to VIN + 0.3 V
VOUT range	-0.3 V to 6 V
Peak output current	Internally limited
ESD rating, HBM	2 kV
ESD rating, CDM	500 V
Continuous total power dissipation	See Dissipation Ratings Table
Junction temperature range, DBV package	-40°C to 150°C
Junction temperature range, YEQ package	-40°C to 125°C
Storage temperature range, Tstg	-65°C to 150°C

(1)Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

2

						TPS79301, TPS79318
					TPS79325, TPS79328, TPS793285
www.ti.com					TPS79330, TPS79333, TPS793475
					SLVS348H –JULY 2001 –REVISED OCTOBER 2004
DISSIPATION RATINGS TABLE
				DERATING FACTOR	TA ≤ 25°C	TA = 70°C	TA = 85°C
					POWER	POWER	POWER
BOARD	PACKAGE	RθJC	RθJA	ABOVE TA = 25°C	RATING	RATING	RATING
Low-K(1)	DBV	65°C/W	255°C/W	3.9 mW/°C	390 mW	215 mW	155 mW
High-K(2)	DBV	65°C/W	180°C/W	5.6 mW/°C	560 mW	310 mW	225 mW
Low-K(1)	YEQ	27°C/W	255°C/W	3.9 mW/°C	390 mW	215 mW	155 mW
High-K(2)	YEQ	27°C/W	190°C/W	5.3 mW/°C	530 mW	296 mW	216 mW

(1)The JEDEC low-K (1s) board design used to derive this data was a 3-inch x 3-inch, two layer board with 2 ounce copper traces on top of the board.

(2)The JEDEC high-K (2s2p) board design used to derive this data was a 3-inch x 3-inch, multilayer board with 1 ounce internal power and ground planes and 2 ounce copper traces on top and bottom of the board.

ELECTRICAL CHARACTERISTICS

over recommended operating temperature range TJ = -40 to 125°C, VEN = VIN, VIN = VOUT(nom) + 1 V(1), IOUT = 1 mA, COUT = 10 µF, CNR = 0.01 µF (unless otherwise noted). Typical values are at 25°C.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V Input voltage(1)

2.7

5.5

V

IN

IOUT Continuous output current

0

200

mA

VFB Internal reference (TPS79301)

1.201

1.225

1.250

V

Output voltage range (TPS79301)

VFB

5.5 - VDO

V

TPS79318

0

µA < IOUT < 200 mA,

2.8 V < VIN < 5.5 V

1.764

1.8

1.836

V

TPS79325

0

µA < IOUT < 200 mA,

3.5 V < VIN < 5.5 V

2.45

2.5

2.55

V

TPS79328

0

µA < IOUT < 200 mA,

3.8 V < VIN < 5.5 V

2.744

2.8

2.856

V

Output voltage

TPS793285

0

µA < IOUT < 200 mA,

3.85 V < VIN < 5.5 V

2.793

2.85

2.907

V

TPS79330

0

µA < IOUT < 200 mA,

4 V < VIN < 5.5 V

2.94

3

3.06

V

TPS79333

0

µA ≤ IOUT < 200 mA,

4.3 V < VIN < 5.5 V

3.234

3.3

3.366

V

TPS793475

0

µA < IOUT < 200 mA,

5.25 V < VIN < 5.5 V

4.655

4.75

4.845

V

Line regulation (

V %/

V

) (1)

V

OUT

+ 1 V < V

IN

≤ 5.5 V

0.05

0.12

%/V

OUT

IN

Load regulation (

VOUT%/

IOUT)

0

µA < IOUT < 200 mA,

TJ = 25°C

5

mV

TPS79328

IOUT = 200 mA

120

200

Dropout voltage(2)

TPS793285

IOUT = 200 mA

120

200

TPS79330

IOUT = 200 mA

112

200

mV

(VIN = VOUT(nom) - 0.1V)

TPS79333

IOUT = 200 mA

102

180

TPS793475

IOUT = 200 mA

77

125

Output current limit

VOUT = 0 V

285

600

mA

GND pin current

0

µA < IOUT < 200 mA

170

220

µA

Shutdown current(3)

V

EN

= 0 V, 2.7 V < V < 5.5 V

0.07

1

µA

IN

FB pin current

VFB = 1.8 V

1

µA

f = 100 Hz, TJ = 25°C,

IOUT = 10 mA

70

Power-supply ripple rejection

TPS79328

f = 100 Hz, TJ = 25°C,

IOUT = 200 mA

68

dB

f = 10 kHz, TJ = 25°C,

IOUT = 200 mA

70

f = 100 kHz, TJ = 25°C,

IOUT = 200 mA

43

CNR = 0.001 µF

55

Output noise voltage (TPS79328)

BW = 200 Hz to 100 kHz,

CNR = 0.0047 µF

36

µVRMS

IOUT = 200 mA

C = 0.01 µF

33

NR

CNR = 0.1 µF

32

(1)Minimum VIN is 2.7 V or VOUT + VDO, whichever is greater.

(2)Dropout is not measured for the TPS79318 and TPS79325 since minimum VIN = 2.7 V.

(3)For adjustable versions, this applies only after VIN is applied; then VEN transitions high to low.

3

	TPS79301, TPS79318
	TPS79325, TPS79328, TPS793285
	TPS79330, TPS79333, TPS793475	www.ti.com
	SLVS348H –JULY 2001 –REVISED OCTOBER 2004

ELECTRICAL CHARACTERISTICS (continued)

over recommended operating temperature range TJ = -40 to 125°C, VEN = VIN, VIN = VOUT(nom) + 1 V, IOUT = 1 mA, COUT = 10 µF, CNR = 0.01 µF (unless otherwise noted). Typical values are at 25°C.

PARAMETER	TEST CONDITIONS		MIN	TYP	MAX	UNIT
		CNR = 0.001 µF		50
Time, start-up (TPS79328)	RL = 14 Ω, COUT = 1 µF	CNR = 0.0047 µF		70		µs
		CNR = 0.01 µF		100
High level enable input voltage	2.7 V < VIN < 5.5 V		1.7		VIN	V
Low level enable input voltage	2.7 V < VIN < 5.5 V		0		0.7	V
EN pin current	VEN = 0		-1		1	µA
UVLO threshold	VCC rising		2.25		2.65	V
UVLO hysteresis				100		mV

4

TPS79301, TPS79318

TPS79325, TPS79328, TPS793285

TPS79330, TPS79333, TPS793475

www.ti.com

SLVS348H –JULY 2001 –REVISED OCTOBER 2004

FUNCTIONAL BLOCK DIAGRAMS

ADJUSTABLE VERSION

IN OUT

	UVLO	Current		59 k
	2.45V	Sense
GND		ILIM		SHUTDOWN	R1
			_	+
					FB
EN					R2
		UVLO
	Thermal
	Shutdown	QuickStart			External to
					the Device
	Bandgap	250 kΩ		Vref
IN	Reference				NR
	1.22V

FIXED VERSION

IN	UVLO				OUT
		Current
	2.45V
		Sense
GND		ILIM		SHUTDOWN
				R1
			_
				+
EN
		UVLO
				R2
	Thermal
	Shutdown	QuickStart		R2 = 40 kΩ
	Bandgap	Ω		Vref
IN	Reference	250 k			NR
	1.22V

					Terminal Functions
		TERMINAL
	NAME	SOT23	SOT23	WCSP	DESCRIPTION
		ADJ	FIXED	FIXED
	NR	4	4	B2	Connecting an external capacitor to this pin bypasses noise generated by the internal bandgap.
					This improves power-supply rejection and reduces output noise.
	EN	3	3	A3	Driving the enable pin (EN) high turns on the regulator. Driving this pin low puts the regulator into
					shutdown mode. EN can be connected to IN if not used.
	FB	5	N/A	N/A	This terminal is the feedback input voltage for the adjustable device.
	GND	2	2	A1	Regulator ground
	IN	1	1	C3	Unregulated input to the device.
	OUT	6	5	C1	Output of the regulator.

5

TPS79301, TPS79318

TPS79325, TPS79328, TPS793285

TPS79330, TPS79333, TPS793475

www.ti.com

SLVS348H –JULY 2001 –REVISED OCTOBER 2004

TYPICAL CHARACTERISTICS (SOT23 PACKAGE)

TPS79328	TPS79328
OUTPUT VOLTAGE	OUTPUT VOLTAGE
vs	vs
OUTPUT CURRENT	JUNCTION TEMPERATURE

	2.805					2.805
	2.804			VIN = 3.8 V
				COUT = 10 μF
						2.800
	2.803			TJ = 25°C
	2.802					2.795
(V)	2.801				(V)
OUT	2.800				OUT	2.790
V	2.799				V
	2.798					2.785
	2.797					2.780
	2.796
	2.795	50	100	150	200	2.775
	0

IOUT (mA)

		IOUT = 1 mA
IOUT = 200 mA
VIN = 3.8 V
COUT = 10 μF
−40 −25 −10 5	20	35	50	65	80	95 110 125
		TJ (°C)

Figure 2.

Figure 3.

TPS79328

GROUND CURRENT vs

JUNCTION TEMPERATURE

	250
	VIN = 3.8 V
	COUT = 10 μF			IOUT = 1 mA
	200
(μA)	150		IOUT = 200 mA
GND
I	100
	50
	0
	−40 −25−10 5	20	35	50	65	80	95 110 125
			TJ (°C)

Figure 4.

TPS79328 OUTPUT SPECTRAL	TPS79328 OUTPUT SPECTRAL
NOISE DENSITY	NOISE DENSITY
vs	vs
FREQUENCY	FREQUENCY

Hz)V/(√μ	0.30				Hz)V/(√μ	0.30
			VIN = 3.8 V					VIN = 3.8 V
	0.25		COUT = 2.2 μF			0.25		COUT = 10 μF
			CNR = 0.1 μF					CNR = 0.1 μF
Density					Density
	0.20					0.20
Noise	0.15		IOUT = 1 mA		Noise	0.15		IOUT = 1 mA
Spectral					Spectral
	0.10		IOUT = 200 mA			0.10		IOUT = 200 mA
Output	0.05				Output	0.05
	0					0
	100	1 k	10 k	100 k		100	1 k	10 k	100 k
		Frequency (Hz)					Frequency (Hz)

TPS79328 OUTPUT SPECTRAL

NOISE DENSITY vs FREQUENCY

	1.6
√Hz)	1.4		VIN = 3.8 V
			IOUT = 200 mA
(μV/	1.2		COUT = 10 μF
Density		CNR = 0.001 μF
	1.0		μ
		CNR = 0.0047 F
Noise	0.8		CNR = 0.01 μF
Spectral	0.6		CNR = 0.1 μF
	0.4
Output	0.2
	0
	100	1 k	10 k	100 k

Frequency (Hz)

Figure 5.

Figure 6.

Figure 7.

ROOT MEAN SQUARE OUTPUT

NOISE vs CNR

		60
			VOUT = 2.8 V
		50	IOUT = 200 mA
	)		COUT = 10	μF
	RMS
	(V	40
	Noise	30
	Output
		20
	RMS,
		10
		BW = 100 Hz to 100 kHz
		0
		0.001	0.01	0.1
			CNR (μF)

Figure 8.

									TPS79328
	OUTPUT IMPEDANCE							DROPOUT VOLTAGE
			vs						vs
		FREQUENCY						JUNCTION TEMPERATURE
2.5	VIN = 3.8 V						180	VIN = 2.7 V
	COUT = 10 μF						160	COUT = 10	μ
	TJ = 25° C								F
2.0							140
1.5							120		IOUT = 200 mA
						(mV)
(Ω)	IOUT = 1 mA						100
ZO						DO	80
1.0						V
	IOUT = 100 mA
							60
0.5							40
							20		IOUT = 10 mA
0	100	1 k	10 k 100 k	1 M	10 M		0		20 35 50 65	80	95 110 125
10							−40 −25−10 5
		Frequency (Hz)							TJ (°C)
			Figure 9.						Figure 10.

6