Texas Instruments TPS79301DBVREP, TPS79301MDBVREP, TPS79318DBVREP, TPS79325DBVREP, TPS793285DBVREP Schematic [ru]

TPS79301-EP, TPS79318-EP, TPS79325-EP, TPS79328-EP

TPS793285-EP, TPS79330-EP, TPS79333-EP, TPS793475-EP

www.ti.com	SGLS163B – APRIL 2003 – REVISED NOVEMBER 2006

ULTRALOW-NOISE, HIGH-PSRR, FAST RF 200-mA

LOW-DROPOUT LINEAR REGULATORS

FEATURES

∙Controlled Baseline

–One Assembly/Test Site, One Fabrication Site

∙Enhanced Diminishing Manufacturing Sources (DMS) Support

∙Enhanced Product-Change Notification

∙Qualification Pedigree (1)

∙200-mA Low-Dropout Regulator With EN

∙Available in 1.8 V, 2.5 V, 2.8 V, 2.85 V, 3 V, 3.3 V, 4.75 V, and Adjustable

∙High PSRR (70 dB at 10 kHz)

∙Ultralow Noise (32 μV)

∙Fast Start-Up Time (50 μs)

∙Stable With a 2.2-μF Ceramic Capacitor

∙Excellent Load/Line Transient

∙Very Low Dropout Voltage

(112 mV at Full Load, TPS79330)

∙5-Pin SOT23 (DBV) Package

APPLICATIONS

∙VCOs

∙RF

∙Bluetooth™, Wireless LAN

(1)Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over specified temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

DBV PACKAGE

(TOP VIEW)

IN								OUT
			1		5
			2
GND
EN								BYPASS
			3		4
		Fixed Option
	DBV PACKAGE
		(TOP VIEW)
IN								OUT
			1		6
GND			2		5			FB
EN								BYPASS
			3		4

Adjustable Option

DESCRIPTION

The TPS793xx family of low-dropout (LDO) low-power linear voltage regulators features high power-supply rejection ratio (PSRR), ultralow noise, fast start-up, and excellent line and load transient responses in a small-outline SOT23 package. Each device in the family is stable, with a small 2.2-μF ceramic capacitor on the output. The TPS793xx family uses an advanced, proprietary, BiCMOS fabrication process to yield extremely low dropout voltages (e.g., 112 mV at 200 mA, TPS79330). Each device achieves fast start-up times (approximately 50 μs with a 0.001-μF bypass capacitor), while consuming very low quiescent current (170 μA typical). Moreover, when the device is placed in standby mode, the supply current is reduced to less than 1 μA. The TPS79328 exhibits approximately

32 μVRMS of output voltage noise with a 0.1-μF bypass capacitor. Applications with analog

components that are noise sensitive, such as portable RF electronics, benefit from the high PSRR and low-noise features, as well as the fast response time.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Bluetooth is a trademark of Bluetooth SIG, Inc.

PRODUCTION DATA information is current as of publication date.	Copyright © 2003–2006, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.

TPS79301-EP, TPS79318-EP, TPS79325-EP, TPS79328-EP

TPS793285-EP, TPS79330-EP, TPS79333-EP, TPS793475-EP

www.ti.com

SGLS163B – APRIL 2003 – REVISED NOVEMBER 2006

TPS79328

TPS79328

RIPPLE REJECTION

				vs
			FREQUENCY
	100
	90				IO = 200 mA
	80
dB	70
−
Rejection	60
	50
Ripple	40	IO = 10 mA
	30
	20	VI = 3.8 V
	10	Co = 10 μF
	0	C(byp) = 0.01 μF
	10	100	1 k	10 k	100 k	1 M	10 M
			f − Frequency − Hz

OUTPUT SPECTRAL NOISE DENSITY

			vs
	0.3	FREQUENCY
Hz
			VI = 3.8 V
V/	0.25		Co = 2.2 μF
μ			C(byp) = 0.1 μF
−	0.2
Density
	0.15
Noise			IO = 1 mA
Spectral	0.1
			IO = 200 mA
	0.05
Output
	0
	100	1 k	10 k	100 k
		f − Frequency − Hz

	TJ	VOLTAGE
		1.2 to 5.5 V
		1.8 V
		2.5 V
	–40°C to 125°C	2.8 V
		2.85 V
		3 V
		3.3 V
		4.75 V
	–55°C to 125°C	1.2 to 5.5 V

(1)The DBVR indicates tape and reel of 3000 parts.

(2)Product preview

AVAILABLE OPTIONS

	PACKAGE	PART NUMBER	SYMBOL
		TPS79301DBVREP(1)	PGVE
		TPS79318DBVREP(1)	PHHE
		TPS79325DBVREP(1)	PGWE
	SOT23	TPS79328DBVREP(1)(2)	PGXE
		TPS793285DBVREP(1)(2)	PHIE
	(DBV)
		TPS79330DBVREP(1)(2)	PGYE
		TPS793333DBVREP(1)	PHUE
		TPS793475DBVREP(1)	PHJE
		TPS79301MDBVREP(1)	PMBM

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TPS79301-EP, TPS79318-EP, TPS79325-EP, TPS79328-EP

TPS793285-EP, TPS79330-EP, TPS79333-EP, TPS793475-EP

www.ti.com

SGLS163B – APRIL 2003 – REVISED NOVEMBER 2006

ABSOLUTE MAXIMUM RATINGS(1)

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
	Input voltage range(2)	–0.3	6	V
	Voltage range at EN	–0.3	VI +	V
			0.3
	Voltage on OUT	–0.3	6	V
	Peak output current		Internally limited
	ESD rating	Human-Body Model (HBM)	2	kV
		Changed-Device Model (CDM)	500	V
	Continuous total power dissipation		See Dissipation
			Rating Table
TJ	Operating virtual junction temperature range	–55	125	°C
Tstg	Storage temperature range	–65	150	°C

(1)Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)All voltage values are with respect to network ground terminal

Dissipation Ratings

		RθJC	RθJA	DERATING	TA ≤ 25°C	TA = 70°C	TA = 85°C
BOARD	PACKAGE			FACTOR ABOVE	POWER	POWER	POWER
				TA = 25°C	RATING	RATING	RATING
Low K(1)	DBV	63.75°C/W	256°C/W	3.906 mW/°C	391 mW	215 mW	156 mW
High K(2)	DBV	63.75°C/W	178.3°C/W	5.609 mW/°C	561 mW	308 mW	224 mW

(1)The JEDEC low K (1s) board design used to derive this data was a 3-in × 3-in, two layer board with 2-oz copper traces on top of the board.

(2)The JEDEC high K (2s2p) board design used to derive this data was a 3-in × 3-in, multilayer board with 1-oz internal power and ground planes and 2-oz copper traces on top and bottom of the board.

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TPS79301-EP, TPS79318-EP, TPS79325-EP, TPS79328-EP

TPS793285-EP, TPS79330-EP, TPS79333-EP, TPS793475-EP

www.ti.com

SGLS163B – APRIL 2003 – REVISED NOVEMBER 2006

ELECTRICAL CHARACTERISTICS

over recommended operating free-air temperature range, EN = VI, TJ = –55 to 125°C and TJ = –40 to 125°C, VI = VO(typ) + 1 V, IO = 1 mA, Co = 10 μF, C(byp) = 0.01 μF (unless otherwise noted)

	PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
V	Input voltage(1)				2.7		5.5	V
I
I	Continuous output current(2)				0		200	mA
O
TJ	Operating junction temperature				–55		125	°C
			0 mA < IO < 200 mA,	TJ = –40 to 125°C,	0.98 Vo		1.02 Vo
			1.22 V £ VO £ 5.2 V (3)
		TPS79301
			0 mA < IO < 200 mA,	TJ = –55 to 125°C,			1.025
					0.97 Vo
			1.22 V £ VO £ 5.2 V (3)				Vo
		TPS79318	TJ = 25°C			1.8
			0 mA < IO < 200 mA,	2.8 V < VI < 5.5 V	1.764		1.836
		TPS79325	TJ = 25°C			2.5
			0 mA < IO < 200 mA,	3.5 V < VI < 5.5 V	2.45		2.55
		TPS79328	TJ = 25°C			2.8
Output voltage			0 mA < IO < 200 mA,	3.8 V < VI < 5.5 V	2.744		2.856	V
		TPS793285	TJ = 25°C			2.85
			0 mA < IO < 200 mA,	3.85 V < VI < 5.5 V	2.793		2.907
		TPS79330	TJ = 25°C			3
			0 mA < IO < 200 mA,	4 V < VI < 5.5 V	2.94		3.06
		TPS79333	TJ = 25°C			3.3
			0 mA < IO < 200 mA,	4.3 V < VI < 5.5 V	3.234		3.366
		TPS793475	TJ = 25°C			4.75
			0 mA < IO < 200 mA,	5.25 V < VI < 5.5 V	4.655		4.845
Quiescent current (GND current)			0 mA < IO < 200 mA,	TJ = 25°C		170		mA
			0 mA < IO < 200 mA				220
Load regulation			0 mA < IO < 200 mA,	TJ = 25°C		5		mV
Output voltage line regulation (DVO/VO)(4)			VO + 1 V < VI £ 5.5 V,	TJ = 25°C		0.05		%/V
			VO + 1 V < VI £ 5.5 V				0.12
				C(byp) = 0.001 mF		55
Output noise voltage (TPS79328)			BW = 200 Hz to 100 kHz,	C(byp) = 0.0047 mF		36		mVRMS
			IO = 200 mA, TJ = 25°C	C(byp) = 0.01 mF		33
				C(byp) = 0.1 mF		32
			RL = 14 W,	C(byp) = 0.001 mF		50
Time, start-up (TPS79328)				C(byp) = 0.0047 mF		70		ms
			Co = 1 mF, TJ = 25°C
				C(byp) = 0.01 mF		100
Output current limit			V = 0 V(3)		285		600	mA
			O
Standby current			EN = 0 V,	2.7 V < VI < 5.5 V		0.07	1	mA
High-level enable input voltage			2.7 V < VI < 5.5 V		2			V
Low-level enable input voltage			2.7 V < VI < 5.5 V				0.7	V
Input current (EN)			EN = 0		–1		1	mA

(1)To calculate the minimum input voltage for your maximum output current, use the following formula: VI(min) = VO(max) + VDO (max load)

(2)Continuous output current and operating junction temperature are limited by internal protection circuitry, but it is not recommended that the device operate under conditions beyond those specified in this table for extended periods of time.

(3)The minimum IN operating voltage is 2.7 V or VO(typ) + 1 V, whichever is greater. The maximum IN voltage is 5.5 V. The maximum output current is 200 mA.

(4)If VO £ 2.5 V, then VImin = 2.7 V, VImax = 5.5 V:

Line Reg. (mV) + % V VImax * 2.7 V 1000VO

100

If VO ³ 2.5 V, then VImin = VO + 1 V, VImax = 5.5 V.

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TPS79301-EP, TPS79318-EP, TPS79325-EP, TPS79328-EP

TPS793285-EP, TPS79330-EP, TPS79333-EP, TPS793475-EP

www.ti.com

SGLS163B – APRIL 2003 – REVISED NOVEMBER 2006

ELECTRICAL CHARACTERISTICS (continued)

over recommended operating free-air temperature range, EN = VI, TJ = –55 to 125°C and TJ = –40 to 125°C, VI = VO(typ) + 1 V, IO = 1 mA, Co = 10 μF, C(byp) = 0.01 μF (unless otherwise noted)

PARAMETER

Input current (FB) (TPS79301)

Power-supply ripple rejection

Dropout voltage(5)

UVLO threshold UVLO hysteresis

TPS79328

TPS79328

TPS793285

TPS79330

TPS79333

TPS793475

TEST CONDITIONS		MIN TYP	MAX	UNIT
FB = 1.8 V			1	μA
f = 100 Hz, TJ = 25°C,	IO = 10 mA	70
f = 100 Hz, TJ = 25°C,	IO = 200 mA	68		dB
f = 10 Hz, TJ = 25°C,	IO = 200 mA	70
f = 100 Hz, TJ = 25°C,	IO = 200 mA	43
IO = 200 mA,	TJ = 25°C	120
IO = 200 mA			200
IO = 200 mA,	TJ= 25°C	120
IO = 200 mA			200
IO = 200 mA,	TJ = 25°C	112		mV
IO = 200 mA			200
IO = 200 mA,	TJ = 25°C	102
IO = 200 mA			180
IO = 200 mA,	TJ = 25°C	77
IO = 200 mA			125
VCC rising		2.25	2.65	V
TJ = 25°C	VCC rising	100		mV

(5)IN voltage equals VO(typ)– 100 mV; The TPS79325 dropout voltage is limited by the input voltage range limitations.

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TPS79301-EP, TPS79318-EP, TPS79325-EP, TPS79328-EP

TPS793285-EP, TPS79330-EP, TPS79333-EP, TPS793475-EP

www.ti.com

SGLS163B – APRIL 2003 – REVISED NOVEMBER 2006

DEVICE INFORMATION

FUNCTIONAL BLOCK DIAGRAM – ADJUSTABLE VERSION

VIN VOUT

	UVLO	Current
		Sense
		ILIM	SHUTDOWN	R1
GND		_	+
				FB
EN
		UVLO		R2
	Thermal
	Shutdown			External to
				the Device
VIN	Bandgap	250 kΩ	Vref	Bypass
	Reference

	FUNCTIONAL BLOCK DIAGRAM – FIXED VERSION
VIN					VOUT
	UVLO	Current
		Sense
GND		ILIM		SHUTDOWN
				R1
			_
				+
EN
		UVLO
				R2
	Thermal
	Shutdown
VIN	Bandgap	250 kΩ		Vref	Bypass
	Reference

					TERMINAL FUNCTIONS
		TERMINAL		I/O	DESCRIPTION
	NAME	ADJ	FIXED
	BYPASS	4	4		An external bypass capacitor, connected to this terminal, in conjunction with an internal
					resistor, creates a low-pass filter to further reduce regulator noise.
	EN	3	3	I	Enable input that enables or shuts down the device. When EN goes to a logic high, the
					device is enabled. When the device goes to a logic low, the device is in shutdown mode.
	FB	5	N/A	I	Feedback input voltage for the adjustable device
	GND	2	2		Regulator ground
	IN	1	1	I	Input to the device
	OUT	6	5	O	Regulated output of the device

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TPS79301-EP, TPS79318-EP, TPS79325-EP, TPS79328-EP

TPS793285-EP, TPS79330-EP, TPS79333-EP, TPS793475-EP

www.ti.com

SGLS163B – APRIL 2003 – REVISED NOVEMBER 2006

TYPICAL CHARACTERISTICS

TPS79328

OUTPUT VOLTAGE vs

OUTPUT CURRENT

	2.805					2.805
	2.804			VI = 3.8 V
				Co = 10 F
						2.8
	2.803			TJ = 25° C
					− V
V	2.802
Output V oltage −					− Output V oltage	2.795
	2.801
	2.8					2.79
	2.799
	2.798					2.785
−					O
O
	2.797
V					V	2.78
	2.796
	2.795					2.775
	0	50	100	150	200
		IO − Output Current − mA

Figure 1.

TPS79328

TPS79328

TPS79328

OUTPUT VOLTAGE

GROUND CURRENT

vs

vs

JUNCTION TEMPERATURE

JUNCTION TEMPERATURE

250

VI = 3.8 V

A

Co = 10 F

IO = 1 mA

IO = 1 mA

200

µ

−

Current

150

IO = 200 mA

IO = 200 mA

Ground

100

50

VI = 3.8 V

Co = 10 F

−40 −25 −10 5

20

35

50

65

80

95 110 125

0

−40 −25−10 5

20

35

50

65

80

95 110 125

T − Junction T emperature − °C

TJ − Junction T emperature −

°

J

C

Figure 2.

Figure 3.

TPS79328

TPS79328

OUTPUT SPECTRAL NOISE DENSITY

OUTPUT SPECTRAL NOISE DENSITY

OUTPUT SPECTRAL NOISE DENSITY

vs

vs

vs

0.3

FREQUENCY

0.3

FREQUENCY

1.6

FREQUENCY

Hz

Hz

Hz

VI

= 3.8 V

VI = 3.8 V

VI = 3.8 V

1.4

V/

C

= 2.2 μF

V/

C = 10 μF

V/

IO = 200 mA

0.25

o

0.25

o

Co= 10 μF

m

C(byp) = 0.1 μF

m

C(byp) = 0.1 μF

m

1.2

DensityNoiseSpectralOutput−

C(byp) = 0.001 μF

DensityNoiseSpectralOutput−

0

DensityNoiseSpectralOutput−

0

0

0.2

0.2

1

C(byp) = 0.0047

μ

F

0.15

IO = 1 mA

0.15

IO = 1 mA

0.8

C(byp) = 0.01 μF

0.1

0.1

0.6

C(byp) = 0.1 μF

IO = 200 mA

IO = 200 mA

0.4

0.05

0.05

0.2

100

1 k

10 k

100 k

100

1 k

10 k

100 k

100

1 k

10 k

100 k

f − Frequency − Hz

f − Frequency − Hz

f − Frequency − Hz

Figure 4.

Figure 5.

Figure 6.

ROOT MEAN SQUARED OUTPUT NOISE

OUTPUT IMPEDANCE

TPS79328

(RMS)

vs

vs

DROPOUT VOLTAGE

BYPASS CAPACITANCE

FREQUENCY

vs

60

2.5

JUNCTION TEMPERATURE

V

VO = 2.8 V

VI = 3.8 V

180

m

IO = 200 mA

Co = 10 F

VI = 2.7 V

50

OutputSquaredNoise −

Co = 10

μ

F

ImpedanceOutput− − Ω

TJ = 25° C

160

C

o

= 10 F

2

oltageVDropout− mV

40

140

1.5

120

IO = 200 mA

IO = 1 mA

30

100

20

1

80

IO = 100 mA

Mean

Z

DO

40

o

0.5

−

60

10

Root−

BW = 100 Hz to 100

V

20

IO = 10 mA

RMS

0

kHz

0

0.001

0.01

0.1

10

100

1 k

10 k 100 k

1 M

10 M

0

50 65 80

95 110 125

C(byp) − Bypass Capacitance −

μF

f − Frequency − Hz

−40 −25−10 5 20 35

TJ − Junction T emperature − °C

Figure 7.

Figure 8.

Figure 9.

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