MOTOROLA MC74HC175AF, MC74HC175ADTEL, MC74HC175ADR2, MC74HC175ADT, MC74HC175AFR2 Datasheet

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MOTOROLA MC74HC175AF, MC74HC175ADTEL, MC74HC175ADR2, MC74HC175ADT, MC74HC175AFR2 Datasheet

MC74HC175A

Quad D Flip-Flop with Common Clock and Reset

High±Performance Silicon±Gate CMOS

The MC74HC175A is identical in pinout to the LS175. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.

This device consists of four D flip±flops with common Reset and Clock inputs, and separate D inputs. Reset (active±low) is asynchronous and occurs when a low level is applied to the Reset input. Information at a D input is transferred to the corresponding Q output on the next positive going edge of the Clock input.

Output Drive Capability: 10 LSTTL Loads

Outputs Directly Interface to CMOS, NMOS, and TTL

Operating Voltage Range: 2 to 6 V

Low Input Current: 1 μA

High Noise Immunity Characteristic of CMOS Devices

In Compliance with the Requirements Defined by JEDEC Standard No. 7A

Chip Complexity 166 FETs or 41.5 Equivalent Gates

 

 

 

LOGIC DIAGRAM

 

 

CLOCK

9

2

Q0

 

 

3

 

 

 

 

Q0

 

 

 

 

7

 

 

 

4

Q1

INVERTING

 

D0

6

 

Q1

AND

 

5

10

DATA

D1

Q2

NONINVERTING

11

 

Q2

OUTPUTS

INPUTS

 

12

D2

15

Q3

 

 

 

 

 

 

13

14

 

 

D3

Q3

 

 

 

 

 

RESET 1

PIN 16 = VCC

PIN 8 = GND

FUNCTION TABLE

 

Inputs

 

Outputs

Reset

Clock

D

Q

 

 

Q

L

X

X

L

H

H

 

H

H

L

H

 

L

L

H

H

L

X

No Change

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MARKING

 

 

DIAGRAMS

 

 

16

 

PDIP±16

MC74HC175AN

 

N SUFFIX

16

AWLYYWW

CASE 648

 

 

 

1

1

 

 

 

 

16

 

SO±16

HC175A

 

D SUFFIX

16

AWLYWW

CASE 751B

 

 

 

1

1

 

 

 

 

16

 

TSSOP±16

HC

16

DT SUFFIX

175A

 

CASE 948F

ALYW

 

1

 

 

 

1

A = Assembly Location

WL = Wafer Lot

YY = Year

WW = Work Week

PIN ASSIGNMENT

RESET

 

1

16

 

VCC

 

 

 

 

Q0

 

2

15

 

Q3

 

 

 

 

3

14

 

 

 

 

Q0

 

Q3

 

 

 

 

 

 

D0

 

4

13

 

D3

 

 

 

 

D1

 

5

12

 

D2

 

 

 

 

 

 

 

6

11

 

 

 

 

Q1

 

 

 

Q2

 

 

Q1

 

7

10

 

Q2

 

 

GND

 

8

9

 

CLOCK

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ORDERING INFORMATION

Device

Package

Shipping

MC74HC175AN

PDIP±16

2000 / Box

MC74HC175AD

SOIC±16

48 / Rail

MC74HC175ADR2

SOIC±16

2500 / Reel

MC74HC175ADT

TSSOP±16

96 / Rail

MC74HC175ADTR2

TSSOP±16

2500 / Reel

Semiconductor Components Industries, LLC, 1999

1

Publication Order Number:

March, 2000 ± Rev. 2

 

MC74HC175A/D

MC74HC175A

MAXIMUM RATINGS*

Symbol

Parameter

 

Value

Unit

 

 

 

 

VCC

DC Supply Voltage (Referenced to GND)

± 0.5 to + 7.0

V

Vin

DC Input Voltage (Referenced to GND)

± 0.5 to VCC + 0.5

V

Vout

DC Output Voltage (Referenced to GND)

± 0.5 to VCC + 0.5

V

Iin

DC Input Current, per Pin

 

± 20

mA

Iout

DC Output Current, per Pin

 

± 25

mA

ICC

DC Supply Current, VCC and GND Pins

± 50

mA

PD

Power Dissipation in Still Air,

Plastic DIP²

750

mW

 

 

SOIC Package²

500

 

 

 

TSSOP Package²

450

 

 

 

 

 

 

Tstg

Storage Temperature

 

± 65 to + 150

_C

TL

Lead Temperature, 1 mm from Case for 10 Seconds

 

_C

 

(Plastic DIP, SOIC or TSSOP Package)

260

 

 

 

 

 

 

This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high±impedance circuit. For proper operation, Vin and Vout should be constrained to the

range GND v (Vin or Vout) v VCC. Unused inputs must always be

tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.

*Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions.

²Derating Ð Plastic DIP: ± 10 mW/ _C from 65_ to 125_C SOIC Package: ± 7 mW/_C from 65_ to 125_C

TSSOP Package: ± 6.1 mW/_C from 65_ to 125_C

For high frequency or heavy load considerations, see Chapter 2 of the Motorola High±Speed CMOS Data Book (DL129/D).

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

 

Min

Max

Unit

 

 

 

 

 

 

VCC

DC Supply Voltage (Referenced to GND)

 

2.0

6.0

V

Vin, Vout

DC Input Voltage, Output Voltage (Referenced to GND)

0

VCC

V

TA

Operating Temperature, All Package Types

 

± 55

+ 125

_C

tr, tf

Input Rise and Fall Time

VCC = 2.0 V

0

1000

ns

 

(Figure 1)

VCC = 3.0 V

0

600

 

 

 

VCC = 4.5 V

0

500

 

 

 

VCC = 6.0 V

 

400

 

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

 

 

 

 

Guaranteed Limit

 

 

 

 

 

 

 

 

 

 

 

 

VCC

± 55 to

 

 

 

Symbol

Parameter

Test Conditions

V

25_C

v 85_C

v 125_C

Unit

 

 

 

 

 

 

 

 

VIH

Minimum High±Level Input

Vout = 0.1 V or VCC ± 0.1 V

2.0

1.5

1.5

1.5

V

 

Voltage

|Iout| v 20 μA

3.0

2.1

2.1

2.1

 

 

 

 

4.5

3.15

3.15

3.15

 

 

 

 

6.0

4.2

4.2

4 2

 

 

 

 

 

 

 

 

 

VIL

Maximum Low±Level Input

Vout = 0.1 V or VCC ± 0.1 V

2.0

0.5

0.5

0.5

V

 

Voltage

|Iout| v 20 μA

3.0

0.9

0.9

0.9

 

 

 

 

4.5

1.35

1.35

1.35

 

 

 

 

6.0

1.80

1.80

1.80

 

 

 

 

 

 

 

 

 

VOH

Minimum High±Level Output

Vin = VIH or VIL

2.0

1.9

1.9

1.9

V

 

Voltage

|Iout| v 20 μA

4.5

4.4

4.4

4.4

 

 

 

 

6.0

5.9

5.9

5.9

 

 

 

 

 

 

 

 

 

 

 

Vin = VIH or VIL |Iout| v 2.4 mA

3.0

2.48

2.34

2.20

 

 

 

|Iout| v 4.0 mA

4.5

3.98

3.84

3.70

 

 

 

|Iout| v 5.2 mA

6.0

5.48

5.34

5.20

 

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MC74HC175A

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

 

 

 

 

Guaranteed Limit

 

 

 

 

 

 

 

 

 

 

 

 

VCC

± 55 to

 

 

 

Symbol

Parameter

Test Conditions

V

25_C

v 85_C

v 125_C

Unit

 

 

 

 

 

 

 

 

VOL

Maximum Low±Level Output

Vin = VIH or VIL

2.0

0.1

0.1

0.1

V

 

Voltage

|Iout| v 20 μA

4.5

0.1

0.1

0.1

 

 

 

 

6.0

0.1

0.1

0.1

 

 

 

 

 

 

 

 

 

 

 

Vin = VIH or VIL |Iout| v 2.4 mA

3.0

0.26

0.33

0.40

 

 

 

|Iout| v 4.0 mA

4.5

0.26

0.33

0.40

 

 

 

|Iout| v 5.2 mA

6.0

0.26

0.33

0.40

 

Iin

Maximum Input Leakage

Vin = VCC or GND

6.0

± 0.1

± 1.0

± 1.0

μA

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC

Maximum Quiescent Supply

Vin = VCC or GND

6.0

4

40

160

μA

 

Current (per Package)

Iout = 0 μA

 

 

 

 

 

NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High±Speed CMOS Data Book (DL129/D).

AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)

 

 

 

 

 

 

 

Guaranteed Limit

 

 

 

 

 

 

 

VCC

 

 

 

 

 

 

 

 

 

 

± 55 to

 

 

 

Symbol

Parameter

V

25_C

v 85_C

v 125_C

Unit

 

 

 

 

 

 

 

 

 

 

 

fmax

Maximum Clock Frequency (50% Duty Cycle)

2.0

6

4.8

4

MHz

 

(Figures 1 and 4)

3.0

10

8.0

6

 

 

 

 

 

 

 

4.5

30

24

20

 

 

 

 

 

 

 

6.0

35

28

24

 

 

 

 

 

 

 

 

 

 

 

 

tPLH,

Maximum Propagation Delay, Clock to Q or

 

 

 

 

2.0

150

190

225

ns

Q

tPHL

(Figures 1 and 4)

3.0

75

90

110

 

 

 

 

 

 

 

4.5

26

32

38

 

 

 

 

 

 

 

6.0

22

28

33

 

 

 

 

 

 

 

 

 

 

 

 

tPHL

Maximum Propagation Delay, Reset to Q or

 

 

 

2.0

125

155

190

ns

Q

 

(Figures 2 and 4)

3.0

70

85

110

 

 

 

 

 

 

 

4.5

22

27

34

 

 

 

 

 

 

 

6.0

19

24

30

 

 

 

 

 

 

 

 

 

 

tTLH,

Maximum Output Transition Time, Any Output

2.0

75

95

110

ns

tTHL

(Figures 1 and 4)

3.0

27

32

36

 

 

 

 

 

 

 

4.5

15

19

22

 

 

 

 

 

 

 

6.0

13

16

19

 

 

 

 

 

 

 

 

Cin

Maximum Input Capacitance

Ð

10

10

10

pF

NOTES:

 

 

 

 

1.

For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High±Speed CMOS Data Book (DL129/D).

 

2.

Information on typical parametric values can be found in Chapter 2 of the Motorola High±Speed CMOS Data Book (DL129/D).

 

 

 

 

 

 

 

 

 

 

Typical @ 25°C, VCC = 5.0 V

 

 

CPD

Power Dissipation Capacitance (Per Flip±Flop)*

35

 

pF

* Used to determine the no±load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the Motorola High±Speed CMOS Data Book (DL129/D).

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