MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
1-of-8 Decoder/Demultiplexer MC74HCT138A with LSTTL Compatible Inputs
High±Performance Silicon±Gate CMOS |
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N SUFFIX |
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16 |
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PLASTIC PACKAGE |
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The MC74HCT138A is identical in pinout to the LS138. The HCT138A |
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CASE 648±08 |
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may be used as a level converter for interfacing TTL or NMOS outputs to |
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High Speed CMOS inputs. |
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D SUFFIX |
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The HCT138A decodes a three±bit Address to one±of±eight active±lot |
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SOIC PACKAGE |
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outputs. This device features three Chip Select inputs, two active±low and |
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CASE 751B±05 |
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one active±high to facilitate the demultiplexing, cascading, and chip±select- |
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ing functions. The demultiplexing function is accomplished by using the |
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DT SUFFIX |
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Address inputs to select the desired device output; one of the Chip Selects is |
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used as a data input while the other Chip Selects are held in their active |
TSSOP PACKAGE |
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states. |
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1 |
CASE 948F±01 |
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• Output Drive Capability: 10 LSTTL Loads |
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ORDERING INFORMATION |
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• TTL/NMOS Compatible Input Levels |
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MC74HCTXXXAN |
Plastic |
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• Outputs Directly Interface to CMOS, NMOS, and TTL |
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MC74HCTXXXAD |
SOIC |
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• Operating Voltage Range: 4.5 to 5.5 V |
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MC74HCTXXXADT TSSOP |
•Low Input Current: 1.0 μA
•In Compliance with the Requirements Defined by JEDEC Standard No. 7A
• Chip Complexity: 122 FETs or 30.5 Equivalent Gates |
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PIN ASSIGNMENT |
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LOGIC DIAGRAM |
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A0 |
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VCC |
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A1 |
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Y0 |
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A0 |
1 |
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Y0 |
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A2 |
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Y1 |
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ADDRESS |
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A1 |
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2 |
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Y1 |
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CS2 |
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Y2 |
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INPUTS |
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3 |
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CS3 |
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Y3 |
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A2 |
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Y2 |
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Y3 |
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ACTIVE±LOW |
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CS1 |
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Y4 |
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Y7 |
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7 |
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Y5 |
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Y4 |
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OUTPUTS |
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GND |
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8 |
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Y6 |
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10 |
Y5 |
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9 |
Y6 |
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7 |
Y7 |
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6 |
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FUNCTION TABLE |
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CHIP± |
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CS1 |
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Inputs |
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Outputs |
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PIN 16 = VCC |
CS1CS2 CS3 |
A2 A1 A0 |
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Y0 |
Y1 |
Y2 |
Y3 |
Y4 |
Y5 |
Y6 |
Y7 |
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SELECT CS2 |
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INPUTS |
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5 |
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PIN 8 = GND |
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H |
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X |
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H |
H |
H |
H |
H |
H |
H |
H |
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CS3 |
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X |
H |
X |
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H |
H |
H |
H |
H |
H |
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H |
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L X X |
X X X |
H H H H H H H H |
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H L L |
L L L |
L H H H H H H H |
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Design Criteria |
Value |
Units |
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H L L |
L L H |
H L H H H H H H |
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H L L |
L H L |
H H L H H H H H |
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Internal Gate Count* |
30.5 |
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ea. |
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H L L |
L H H |
H H H L H H H H |
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Internal Gate Propagation Delay |
1.5 |
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H L L |
H L L |
H H H H L H H H |
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H L L |
H L H |
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H H H H H L H |
H |
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Internal Gate Power Dissipation |
5.0 |
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μW |
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H |
L |
L |
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H |
H |
L |
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H |
H |
H |
H |
H |
H |
L |
H |
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H L L |
H H H |
H H H H H H H L |
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Speed Power Product |
.0075 |
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H = high level (steady state) |
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L = low level (steady state) |
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*Equivalent to a two±input NAND gate. |
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X = don't care |
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10/95 |
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Motorola, Inc. 1995 |
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REV 6 |
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MC74HCT138A
MAXIMUM RATINGS*
Symbol |
Parameter |
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Value |
Unit |
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VCC |
DC Supply Voltage (Referenced to GND) |
± 0.5 to + 7.0 |
V |
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Vin |
DC Input Voltage (Referenced to GND) |
± 0.5 to VCC + 0.5 |
V |
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Vout |
DC Output Voltage (Referenced to GND) |
± 0.5 to VCC + 0.5 |
V |
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Iin |
DC Input Current, per Pin |
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± 20 |
mA |
Iout |
DC Output Current, per Pin |
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± 25 |
mA |
ICC |
DC Supply Current, VCC and GND Pins |
± 50 |
mA |
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PD |
Power Dissipation in Still Air |
Plastic DIP² |
750 |
mW |
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SOIC Package² |
500 |
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TSSOP Package² |
450 |
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Tstg |
Storage Temperature |
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± 65 to + 150 |
_C |
TL |
Lead Temperature, 1 mm from Case for 10 Seconds |
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_C |
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(Plastic DIP, TSSOP or SOIC Package) |
260 |
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This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high±impedance circuit. For proper operation, Vin and Vout should be constrained to the
range GND v (Vin or Vout) v VCC. Unused inputs must always be
tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
*Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions.
²Derating Ð Plastic DIP: ± 10 mW/ _C from 65_ to 125_C SOIC Package: ± 7 mW/_C from 65_ to 125_C
TSSOP Package: ± 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High±Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol |
Parameter |
Min |
Max |
Unit |
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VCC |
DC Supply Voltage (Referenced to GND) |
4.5 |
5.5 |
V |
Vin, Vout |
DC Input Voltage, Output Voltage (Referenced to GND) |
0 |
VCC |
V |
TA |
Operating Temperature, All Package Types |
± 55 |
+ 125 |
_C |
tr, tf |
Input Rise and Fall Time (Figure 1) |
0 |
500 |
ns |
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
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Guaranteed Limit |
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VCC |
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± 55 to |
v _ |
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v |
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Symbol |
Parameter |
Test Conditions |
V |
_ |
|
Unit |
|||
|
25 C |
85 C |
|
|
125 C |
||||
VIH |
Minimum High±Level Input |
Vout = 0.1 V or VCC ± 0.1 V |
4.5 |
2.0 |
2.0 |
|
|
2.0 |
V |
|
Voltage |
|Iout| v 20 μA |
5.5 |
2.0 |
2.0 |
|
|
2.0 |
|
VIL |
Maximum Low±Level Input |
Vout = 0.1 V or VCC ± 0.1 V |
4.5 |
0.8 |
0.8 |
|
|
0.8 |
V |
|
Voltage |
|Iout| v 20 μA |
5.5 |
0.8 |
0.8 |
|
|
0.8 |
|
VOH |
Minimum High±Level Output |
Vin = VIH or VIL |
4.5 |
4.4 |
4.4 |
|
|
4.4 |
V |
|
Voltage |
|Iout| v 20 μA |
5.5 |
5.4 |
5.4 |
|
|
5.4 |
|
|
|
Vin = VIH or VIL |
|
|
|
|
|
|
|
|
|
|Iout| v 4.0 μA |
4.5 |
3.98 |
3.84 |
|
|
3.7 |
|
VOL |
Maximum Low±Level Output |
Vin = VIH or VIL |
4.5 |
0.1 |
0.1 |
|
|
0.1 |
V |
|
Voltage |
|Iout| v 20 μA |
5.5 |
0.1 |
0.1 |
|
|
0.1 |
|
|
|
Vin = VIH or VIL |
|
|
|
|
|
|
|
|
|
|Iout| v 4.0 mA |
4.5 |
0.26 |
0.33 |
|
|
0.4 |
|
Iin |
Maximum Input Leakage Current |
Vin = VCC or GND |
6.0 |
± 0.1 |
± 1.0 |
|
|
± 1.0 |
μA |
ICC |
Maximum Quiescent Supply |
Vin = VCC or GND |
5.5 |
4.0 |
40 |
|
|
160 |
μA |
|
Current (per Package) |
Iout = 0 μA |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
ICC |
Additional Quiescent Supply |
Vin = 2.4 V, Any One Input |
|
≥ ± 55_C |
25_C to 125_C |
|
|||
|
Current |
Vin = VCC or GND, Other Inputs |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
lout = 0 μA |
5.5 |
2.9 |
|
2.4 |
|
mA |
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High±Speed CMOS Data Book (DL129/D).
MOTOROLA |
2 |