MC74HC240A
Octal 3-State Inverting
Buffer/Line Driver/Line
Receiver
High±Performance Silicon±Gate CMOS
The MC74HC240A is identical in pinout to the LS240. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.
This octal noninverting buffer/line driver/line receiver is designed to be used with 3±state memory address drivers, clock drivers, and other sub±oriented systems. The device has inverting outputs and two active±low output enables.
The HC240A is similar in function to the HC244A.
•Output Drive Capability: 15 LSTTL Loads
•Outputs Directly Interface to CMOS, NMOS, and TTL
•Operating Voltage Range: 2 to 6 V
•Low Input Current: 1 μA
•High Noise Immunity Characteristic of CMOS Devices
•In Compliance with the Requirements Defined by JEDEC Standard No. 7A
•Chip Complexity: 120 FETs or 30 Equivalent Gates
LOGIC DIAGRAM
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A1 |
2 |
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18 |
YA1 |
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A2 |
4 |
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16 |
YA2 |
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A3 |
6 |
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14 |
YA3 |
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A4 |
8 |
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12 |
YA4 |
DATA |
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INVERTING |
INPUTS |
B1 |
11 |
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9 |
OUTPUTS |
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YB1 |
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B2 |
13 |
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7 |
YB2 |
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B3 |
15 |
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5 |
YB3 |
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B4 |
17 |
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3 |
YB4 |
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1 |
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PIN 20 = VCC |
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OUTPUT |
ENABLE A |
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PIN 10 = GND |
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ENABLES |
ENABLE B |
19 |
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FUNCTION TABLE |
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Inputs |
Outputs |
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Enable A, |
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Enable B |
A, B |
YA, YB |
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L |
L |
H |
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L |
H |
L |
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H |
X |
Z |
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Z = high impedance
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MARKING |
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DIAGRAMS |
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20 |
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PDIP±20 |
MC74HC240AN |
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N SUFFIX |
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AWLYYWW |
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20 |
CASE 738 |
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1 |
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1 |
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20 |
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SOIC WIDE±20 |
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HC240A |
20 |
DW SUFFIX |
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AWLYYWW |
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1 |
CASE 751D |
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1 |
20 |
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TSSOP±20 |
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HC |
20 |
DT SUFFIX |
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240A |
1 |
CASE 948E |
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ALYW |
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1 |
A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
PIN ASSIGNMENT
ENABLE A |
1 |
20 |
VCC |
A1 |
2 |
19 |
ENABLE B |
YB4 |
3 |
18 |
YA1 |
A2 |
4 |
17 |
B4 |
YB3 |
5 |
16 |
YA2 |
A3 |
6 |
15 |
B3 |
YB2 |
7 |
14 |
YA3 |
A4 |
8 |
13 |
B2 |
YB1 |
9 |
12 |
YA4 |
GND |
10 |
11 |
B1 |
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ORDERING INFORMATION
Device |
Package |
Shipping |
MC74HC240AN |
PDIP±20 |
1440 / Box |
MC74HC240ADW |
SOIC±WIDE |
38 / Rail |
MC74HC240ADWR2 |
SOIC±WIDE |
1000 / Reel |
MC74HC240ADT |
TSSOP±20 |
75 / Rail |
MC74HC240ADTR2 |
TSSOP±20 |
2500 / Reel |
Semiconductor Components Industries, LLC, 2000 |
1 |
Publication Order Number: |
May, 2000 ± Rev. 9 |
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MC74HC240A/D |
MC74HC240A
MAXIMUM RATINGS*
Symbol |
Parameter |
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Value |
Unit |
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VCC |
DC Supply Voltage (Referenced to GND) |
± 0.5 to + 7.0 |
V |
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Vin |
DC Input Voltage (Referenced to GND) |
± 0.5 to VCC + 0.5 |
V |
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Vout |
DC Output Voltage (Referenced to GND) |
± 0.5 to VCC + 0.5 |
V |
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Iin |
DC Input Current, per Pin |
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± 20 |
mA |
Iout |
DC Output Current, per Pin |
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± 35 |
mA |
ICC |
DC Supply Current, VCC and GND Pins |
± 75 |
mA |
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PD |
Power Dissipation in Still Air, |
Plastic DIP² |
750 |
mW |
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SOIC Package² |
500 |
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TSSOP Package² |
450 |
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Tstg |
Storage Temperature |
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± 65 to + 150 |
_C |
TL |
Lead Temperature, 1 mm from Case for 10 Seconds |
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_C |
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(Plastic DIP, SOIC or TSSOP Package) |
260 |
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This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high±impedance circuit. For proper operation, Vin and Vout should be constrained to the
range GND v (Vin or Vout) v VCC. Unused inputs must always be
tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
*Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions.
²Derating Ð Plastic DIP: ± 10 mW/ _C from 65_ to 125_C SOIC Package: ± 7 mW/_C from 65_ to 125_C
TSSOP Package: ± 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High±Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol |
Parameter |
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Min |
Max |
Unit |
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VCC |
DC Supply Voltage (Referenced to GND) |
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2.0 |
6.0 |
V |
Vin, Vout |
DC Input Voltage, Output Voltage (Referenced to GND) |
0 |
VCC |
V |
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TA |
Operating Temperature, All Package Types |
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± 55 |
+ 125 |
_C |
tr, tf |
Input Rise and Fall Time |
VCC = 2.0 V |
0 |
1000 |
ns |
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(Figure 1) |
VCC = 4.5 V |
0 |
500 |
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VCC = 6.0 V |
0 |
400 |
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DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
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Guaranteed Limit |
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VCC |
± 55 to |
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Symbol |
Parameter |
Test Conditions |
V |
25_C |
v 85_C |
v 125_C |
Unit |
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VIH |
Minimum High±Level Input |
Vout = VCC ± 0.1 V |
2.0 |
1.5 |
1.5 |
1.5 |
V |
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Voltage |
|Iout| v 20 |
μA |
3.0 |
2.1 |
2.1 |
2.1 |
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4.5 |
3.15 |
3.15 |
3.15 |
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6.0 |
4.2 |
4.2 |
4.2 |
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VIL |
Maximum Low±Level Input |
Vout = 0.1 V |
2.0 |
0.5 |
0.5 |
0.5 |
V |
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Voltage |
|Iout| v 20 μA |
3.0 |
0.9 |
0.9 |
0.9 |
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4.5 |
1.35 |
1.35 |
1.35 |
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6.0 |
1.8 |
1.8 |
1.8 |
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VOH |
Minimum High±Level Output |
Vin = VIH |
μA |
2.0 |
1.9 |
1.9 |
1.9 |
V |
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Voltage |
|Iout| v 20 |
4.5 |
4.4 |
4.4 |
4.4 |
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6.0 |
5.9 |
5.9 |
5.9 |
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Vin = VIH |
|Iout| v 2.4 mA |
3.0 |
2.48 |
2.34 |
2.2 |
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|Iout| v 6.0 mA |
4.5 |
3.98 |
3.84 |
3.7 |
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|Iout| v 7.8 mA |
6.0 |
5.48 |
5.34 |
5.2 |
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VOL |
Maximum Low±Level Output |
Vin = VIL |
μA |
2.0 |
0.1 |
0.1 |
0.1 |
V |
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Voltage |
|Iout| v 20 |
4.5 |
0.1 |
0.1 |
0.1 |
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6.0 |
0.1 |
0.1 |
0.1 |
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Vin = VIL |
|Iout| v 2.4 mA |
3.0 |
0.26 |
0.33 |
0.4 |
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|Iout| v 6.0 mA |
4.5 |
0.26 |
0.33 |
0.4 |
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|Iout| v 7.8 mA |
6.0 |
0.26 |
0.33 |
0.4 |
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MC74HC240A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
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Guaranteed Limit |
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VCC |
± 55 to |
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Symbol |
Parameter |
Test Conditions |
V |
25_C |
v 85_C |
v 125_C |
Unit |
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Iin |
Maximum Input Leakage |
Vin = VCC or GND |
6.0 |
± 0.1 |
± 1.0 |
± 1.0 |
μA |
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Current |
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IOZ |
Maximum Three±State |
Output in High±Impedance State |
6.0 |
± 0.5 |
± 5.0 |
± 10 |
μA |
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Leakage Current |
Vin = VIL or VIH |
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Vout = VCC or GND |
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ICC |
Maximum Quiescent Supply |
Vin = VCC or GND |
6.0 |
4.0 |
40 |
160 |
μA |
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Current (per Package) |
Iout = 0 μA |
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NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High±Speed CMOS Data Book (DL129/D).
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
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Guaranteed Limit |
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VCC |
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± 55 to |
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Symbol |
Parameter |
V |
25_C |
v 85_C |
v 125_C |
Unit |
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tPLH, |
Maximum Propagation Delay, A to YA or B to YB |
2.0 |
80 |
100 |
120 |
ns |
tPHL |
(Figures 1 and 3) |
3.0 |
40 |
50 |
60 |
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4.5 |
16 |
20 |
24 |
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6.0 |
14 |
17 |
20 |
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tPLZ, |
Maximum Propagation Delay, Output Enable to YA or YB |
2.0 |
110 |
140 |
165 |
ns |
tPHZ |
(Figures 2 and 4) |
3.0 |
60 |
70 |
80 |
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4.5 |
22 |
28 |
33 |
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6.0 |
19 |
24 |
28 |
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tPZL, |
Maximum Propagation Delay, Output Enable to YA or YB |
2.0 |
110 |
140 |
165 |
ns |
tPZH |
(Figures 2 and 4) |
3.0 |
60 |
70 |
80 |
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4.5 |
22 |
28 |
33 |
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6.0 |
19 |
24 |
28 |
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tTLH, |
Maximum Output Transition Time, Any Output |
2.0 |
60 |
75 |
90 |
ns |
tTHL |
(Figures 1 and 3) |
3.0 |
23 |
27 |
32 |
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4.5 |
12 |
15 |
18 |
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6.0 |
10 |
13 |
15 |
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Cin |
Maximum Input Capacitance |
Ð |
10 |
10 |
10 |
pF |
Cout |
Maximum Three±State Output Capacitance (Output in |
Ð |
15 |
15 |
15 |
pF |
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High±Impedance State) |
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NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON Semiconductor High±Speed CMOS Data Book (DL129/D).
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Typical @ 25°C, VCC = 5.0 V |
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CPD |
Power Dissipation Capacitance (Per Transceiver Channel)* |
32 |
pF |
*Used to determine the no±load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the ON Semiconductor High±Speed CMOS Data Book (DL129/D).
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