MOTOROLA MC74HC390DR2, MC74HC390N, MC74HC390FR2, MC74HC390F, MC74HC390FEL Datasheet

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SEMICONDUCTOR TECHNICAL DATA
1
REV 6
Motorola, Inc. 1995
10/95
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High–Performance Silicon–Gate CMOS
The MC54/74HC390 is identical in pinout to the LS390. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.
This device consists of two independent 4–bit counters, each composed of a divide–by–two and a divide–by–five section. The divide–by–two and divide–by–five counters have separate clock inputs, and can be cascaded to implement various combinations of ÷ 2 and/or ÷ 5 up to a ÷ 100 counter.
Flip–flops internal to the counters are triggered by high–to–low transitions of the clock input. A separate, asynchronous reset is provided for each 4–bit counter. State changes of the Q outputs d o not occur s imultaneously because of internal ripple delays. Therefore, decoded output signals are subject to decoding spikes and should not be used as clocks or strobes except when gated with the Clock of the HC390.
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2 to 6 V
Low Input Current: 1 µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No 7A
Chip Complexity: 244 FETs or 61 Equivalent Gates
LOGIC DIAGRAM
Q
A
Q
B
Q
C
Q
D
1, 15
4, 12
2, 14
3, 13
5, 11 6, 10
7, 9
PIN 16 = V
CC
PIN 8 = GND
CLOCK A
RESET
CLOCK B
÷
2
COUNTER
÷
5
COUNTER

PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
CLOCK B
b
Q
Ab
RESET b
CLOCK A
b
V
CC
Q
Db
Q
Cb
Q
Bb
CLOCK B
a
Q
Aa
RESET a
CLOCK A
a
GND
Q
Da
Q
Ca
Q
Ba
FUNCTION TABLE
Clock
A B Reset Action
X X H Reset
÷ 2 and ÷ 5
X L Increment
÷ 2
X L Increment
÷ 5
D SUFFIX
SOIC PACKAGE
CASE 751B–05
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
ORDERING INFORMATION
MC54HCXXXJ MC74HCXXXN MC74HCXXXD
Ceramic Plastic SOIC
1
16
1
16
J SUFFIX
CERAMIC PACKAGE
CASE 620–10
1
16
MC54/74HC390
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 25
mA
I
CC
DC Supply Current, VCC and GND Pins
± 50
mA
P
D
Power Dissipation in Still Air,Plastic or Ceramic DIP†
SOIC Package†
750 500
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic or SOIC DIP)
(Ceramic DIP)
260 300
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
+ 125
_
C
tr, t
f
Input Rise and Fall Time VCC = 2.0 V
(Figure 1) VCC = 4.5 V
VCC = 6.0 V
0 0 0
1000
500 400
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC V
– 55 to
25_C
v
85_Cv 125_C
Unit
V
IH
Minimum High–Level Input Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
V
IL
Maximum Low–Level Input Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
V
OH
Minimum High–Level Output Voltage
Vin = VIH or V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIH or VIL|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.70
5.20
V
OL
Maximum Low–Level Output Voltage
Vin = VIH or V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or VIL|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
I
in
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
µA
I
CC
Maximum Quiescent Supply Current (per Package)
Vin = VCC or GND I
out
= 0 µA
6.0
8
80
160
µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance cir­cuit. For proper operation, Vin and V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
MC54/74HC390
High–Speed CMOS Logic Data DL129 — Rev 6
3 MOTOROLA
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input tf = tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
V
CC V
– 55 to
25_C
v
85_Cv 125_C
Unit
f
max
Maximum Clock Frequency (50% Duty Cycle)
(Figures 1 and 3)
2.0
4.5
6.0
5.4 27 32
4.4 22 26
3.6 18 21
MHz
t
PLH
,
t
PHL
Maximum Propagation Delay, Clock A to QA
(Figures 1 and 3)
2.0
4.5
6.0
120
24 20
150
30 26
180
36 31
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, Clock A to QC (QA connected to Clock B)
(Figures 1 and 3)
2.0
4.5
6.0
290
58 49
365
73 62
435
87 74
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, Clock B to QB
(Figures 1 and 3)
2.0
4.5
6.0
130
26 22
165
33 28
195
39 33
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, Clock B to QC
(Figures 1 and 3)
2.0
4.5
6.0
185
37 31
230
46 39
280
56 48
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, Clock B to QD
(Figures 1 and 3)
2.0
4.5
6.0
130
26 22
165
33 28
195
39 33
ns
t
PHL
Maximum Propagation Delay, Reset to any Q
(Figures 2 and 3)
2.0
4.5
6.0
165
33 28
205
41 35
250
50 43
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
2.0
4.5
6.0
75 15 13
95 19 16
110
22 19
ns
C
in
Maximum Input Capacitance
10
10
10
pF
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
C
PD
Power Dissipation Capacitance (Per Counter)*
35
pF
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
TIMING REQUIREMENTS (Input t
r
= tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
V
CC V
– 55 to
25_C
v
85_Cv 125_C
Unit
t
rec
Minimum Recovery Time, Reset Inactive to Clock A or Clock B
(Figure 2)
2.0
4.5
6.0
50 10
9
65 13 11
75 15 13
ns
t
w
Minimum Pulse Width, Clock A, Clock B
(Figure 1)
2.0
4.5
6.0
80 16 14
100
20 17
120
24 20
ns
t
w
Minimum Pulse Width, Reset
(Figure 2)
2.0
4.5
6.0
125
25 21
155
31 26
190
38 32
ns
tf, t
f
Maximum Input Rise and Fall Times
(Figure 1)
2.0
4.5
6.0
1000
500 400
1000
500 400
1000
500 400
ns
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
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