MOTOROLA MC74HC4066ND, MC74HC4066FL2, MC74HC4066FR1, MC74HC4066FR2, MC74HC4066FEL Datasheet

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MOTOROLA MC74HC4066ND, MC74HC4066FL2, MC74HC4066FR1, MC74HC4066FR2, MC74HC4066FEL Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad Analog Switch/

Multiplexer/Demultiplexer

High±Performance Silicon±Gate CMOS

The MC54/74HC4066 utilizes silicon±gate CMOS technology to achieve fast propagation delays, low ON resistances, and low OFF±channel leakage current. This bilateral switch/multiplexer/demultiplexer controls analog and digital voltages that may vary across the full power±supply range (from VCC to GND).

The HC4066 is identical in pinout to the metal±gate CMOS MC14016 and MC14066. Each device has four independent switches. The device has been designed so that the ON resistances (RON) are much more linear over input voltage than RON of metal±gate CMOS analog switches.

This device is identical in both function and pinout to the HC4016. The ON/OFF control inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. For analog switches with voltage±level translators, see the HC4316.

Fast Switching and Propagation Speeds

High ON/OFF Output Voltage Ratio

Low Crosstalk Between Switches

Diode Protection on All Inputs/Outputs

Wide Power±Supply Voltage Range (VCC ± GND) = 2.0 to 12.0 Volts

Analog Input Voltage Range (VCC ± GND) = 2.0 to 12.0 Volts

Improved Linearity and Lower ON Resistance over Input Voltage than the MC14016 or MC14066 or HC4016

Low Noise

Chip Complexity: 44 FETs or 11 Equivalent Gates

LOGIC DIAGRAM

X

1

2

Y

A

 

 

A

A ON/OFF CONTROL

13

 

 

 

 

 

X

4

3

Y

B

 

 

B

B ON/OFF CONTROL

5

 

ANALOG

 

 

OUTPUTS/INPUTS

 

 

 

X

8

9

Y

C

 

 

C

C ON/OFF CONTROL

6

 

 

 

 

 

X

11

10

Y

D

 

 

D

D ON/OFF CONTROL

12

ANALOG INPUTS/OUTPUTS = XA, XB, XC, XD

 

 

 

 

 

PIN 14 = VCC

 

 

PIN 7 = GND

MC54/74HC4066

 

J SUFFIX

CERAMIC PACKAGE

14

CASE 632±08

1

 

 

N SUFFIX

PLASTIC PACKAGE

14

CASE 646±06

 

1

 

 

D SUFFIX

14

SOIC PACKAGE

1

CASE 751A±03

 

DT SUFFIX

14

TSSOP PACKAGE

1

CASE 948G±01

 

ORDERING INFORMATION

MC54HCXXXXJ

Ceramic

MC74HCXXXXN

Plastic

MC74HCXXXXD

SOIC

MC74HCXXXXDT TSSOP

PIN ASSIGNMENT

X

 

1

14

VCC

 

A

 

 

A ON/OFF

YA

 

2

13

 

CONTROL

 

YB

 

3

12

D ON/OFF

 

 

CONTROL

XB

 

4

11

 

XD

 

B ON/OFF

 

5

10

YD

CONTROL

 

 

C ON/OFF

 

6

9

YC

 

CONTROL

7

8

XC

GND

 

 

FUNCTION TABLE

On/Off Control

State of

Input

Analog Switch

 

 

L

Off

H

On

 

 

10/95

Motorola, Inc. 1995

REV 6

MC54/74HC4066

MAXIMUM RATINGS*

Symbol

Parameter

Value

Unit

This device contains protection

 

 

 

 

circuitry to guard against damage

VCC

Positive DC Supply Voltage (Referenced to GND)

± 0.5 to + 14.0

V

due to high static voltages or electric

VIS

Analog Input Voltage (Referenced to GND)

± 0.5 to VCC + 0.5

V

fields. However, precautions must

 

 

 

 

be taken to avoid applications of any

Vin

Digital Input Voltage (Referenced to GND)

± 1.5 to VCC + 1.5

V

voltage higher than maximum rated

I

DC Current Into or Out of Any Pin

± 25

mA

voltages to this high±impedance cir-

 

 

 

 

cuit. For proper operation, Vin and

PD

Power Dissipation in Still Air, Plastic or Ceramic DIP²

750

mW

Vout should be constrained to the

 

SOIC Package²

500

 

 

 

range GND v (Vin or Vout) v VCC.

 

TSSOP Package²

450

 

 

 

Unused inputs must always be

 

 

 

 

Tstg

Storage Temperature

± 65 to + 150

_C

tied to an appropriate logic voltage

 

 

 

 

level (e.g., either GND or VCC).

TL

Lead Temperature, 1 mm from Case for 10 Seconds

 

_C

260

Unused outputs must be left open.

 

(Plastic DIP, SOIC or TSSOP Package)

 

I/O pins must be connected to a

 

(Ceramic DIP)

300

 

 

 

properly terminated line or bus.

 

 

 

 

*Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions.

²Derating Ð Plastic DIP: ± 10 mW/ _C from 65_ to 125_C Ceramic DIP: ± 10 mW/_C from 100_ to 125_C SOIC Package: ± 7 mW/_C from 65_ to 125_C TSSOP Package: ± 6.1 mW/_C from 65_ to 125_C

For high frequency or heavy load considerations, see Chapter 2 of the Motorola High±Speed CMOS Data Book (DL129/D).

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

 

Min

Max

Unit

 

 

 

 

 

VCC

Positive DC Supply Voltage (Referenced to GND)

2.0

12.0

V

VIS

Analog Input Voltage (Referenced to GND)

 

GND

VCC

V

Vin

Digital Input Voltage (Referenced to GND)

 

GND

VCC

V

VIO*

Static or Dynamic Voltage Across Switch

 

Ð

1.2

V

TA

Operating Temperature, All Package Types

 

± 55

+ 125

_C

tr, tf

Input Rise and Fall Time, ON/OFF Control

 

 

 

ns

 

Inputs (Figure 10)

VCC = 2.0 V

0

1000

 

 

 

VCC = 4.5 V

0

500

 

 

 

VCC = 9.0 V

0

400

 

 

VCC = 12.0 V

0

250

 

*For voltage drops across the switch greater than 1.2 V (switch on), excessive VCC current may be drawn; i.e., the current out of the switch may contain both VCC and switch input components. The reliability of the device will be unaffected unless the Maximum Ratings are exceeded.

DC ELECTRICAL CHARACTERISTIC Digital Section (Voltages Referenced to GND)

 

 

 

 

Guaranteed Limit

 

 

 

 

VCC

 

 

 

 

 

 

 

± 55 to

 

 

 

Symbol

Parameter

Test Conditions

V

25_C

v 85_C

v 125_C

Unit

 

 

 

 

 

 

 

 

VIH

Minimum High±Level Voltage

Ron = Per Spec

2.0

1.5

1.5

1.5

V

 

ON/OFF Control Inputs

 

4.5

3.15

3.15

3.15

 

 

 

 

9.0

6.3

6.3

6.3

 

 

 

 

12.0

8.4

8.4

8.4

 

 

 

 

 

 

 

 

 

VIL

Maximum Low±Level Voltage

Ron = Per Spec

2.0

0.3

0.3

0.3

V

 

ON/OFF Control Inputs

 

4.5

0.9

0.9

0.9

 

 

 

 

9.0

1.8

1.8

1.8

 

 

 

 

12.0

2.4

2.4

2.4

 

 

 

 

 

 

 

 

 

Iin

Maximum Input Leakage Current

Vin = VCC or GND

12.0

± 0.1

± 1.0

± 1.0

μA

 

ON/OFF Control Inputs

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC

Maximum Quiescent Supply

Vin = VCC or GND

6.0

2

20

40

μA

 

Current (per Package)

VIO = 0 V

12.0

8

80

160

 

NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High±Speed CMOS Data Book (DL129/D).

MOTOROLA

2

MC54/74HC4066

DC ELECTRICAL CHARACTERISTICS Analog Section (Voltages Referenced to GND)

 

 

 

 

Guaranteed Limit

 

 

 

 

VCC

 

 

 

 

 

 

 

± 55 to

 

 

 

Symbol

Parameter

Test Conditions

V

25_C

v 85_C

v 125_C

Unit

 

 

 

 

 

 

 

 

Ron

Maximum ªONº Resistance

Vin = VIH

2.0²

Ð

Ð

Ð

Ω

 

 

VIS = VCC to GND

4.5

170

215

255

 

 

 

IS v 2.0 mA (Figures 1, 2)

9.0

85

106

130

 

 

 

 

12.0

85

106

130

 

 

 

 

 

 

 

 

 

 

 

Vin = VIH

2.0

Ð

Ð

Ð

 

 

 

VIS = VCC or GND (Endpoints)

4.5

85

106

130

 

 

 

IS v 2.0 mA (Figures 1, 2)

9.0

63

78

95

 

 

 

 

12.0

63

78

95

 

 

 

 

 

 

 

 

 

Ron

Maximum Difference in ªONº

Vin = VIH

2.0

Ð

Ð

Ð

Ω

 

Resistance Between Any Two

VIS = 1/2 (VCC ± GND)

4.5

30

35

40

 

 

Channels in the Same Package

IS v 2.0 mA

9.0

20

25

30

 

 

 

 

12.0

20

25

30

 

 

 

 

 

 

 

 

 

Ioff

Maximum Off±Channel Leakage

Vin = VIL

12.0

0.1

0.5

1.0

μA

 

Current, Any One Channel

VIO = VCC or GND

 

 

 

 

 

 

 

Switch Off (Figure 3)

 

 

 

 

 

 

 

 

 

 

 

 

 

Ion

Maximum On±Channel Leakage

Vin = VIH

12.0

0.1

0.5

1.0

μA

 

Current, Any One Channel

VIS = VCC or GND

 

 

 

 

 

 

 

(Figure 4)

 

 

 

 

 

 

 

 

 

 

 

 

 

²At supply voltage (V CC ± GND) approaching 2 V the analog switch±on resistance becomes extremely non±linear. Therefore, for low±voltage operation, it is recommended that these devices only be used to control digital signals.

NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High±Speed CMOS Data Book (DL129/D).

AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, ON/OFF Control Inputs: tr = tf = 6 ns)

 

 

 

 

Guaranteed Limit

 

 

 

 

 

VCC

 

 

 

 

 

 

 

 

± 55 to

 

 

 

 

Symbol

 

Parameter

V

25_C

v 85_C

v 125_C

 

Unit

 

 

 

 

 

 

 

 

tPLH,

Maximum Propagation Delay, Analog Input to Analog Output

2.0

50

65

75

 

ns

tPHL

(Figures 8 and 9)

 

4.5

10

13

15

 

 

 

 

 

9.0

10

13

15

 

 

 

 

 

12.0

10

13

15

 

 

 

 

 

 

 

 

 

 

tPLZ,

Maximum Propagation Delay, ON/OFF Control to Analog Output

2.0

150

190

225

 

ns

tPHZ

(Figures 10 and 11)

 

4.5

30

38

45

 

 

 

 

 

9.0

30

30

30

 

 

 

 

 

12.0

30

30

30

 

 

 

 

 

 

 

 

 

 

tPZL,

Maximum Propagation Delay, ON/OFF Control to Analog Output

2.0

125

160

185

 

ns

tPZH

(Figures 10 and 1 1)

 

4.5

25

32

37

 

 

 

 

 

9.0

25

32

37

 

 

 

 

 

12.0

25

32

37

 

 

 

 

 

 

 

 

 

 

 

C

Maximum Capacitance

ON/OFF Control Input

Ð

10

10

10

 

pF

 

 

Control Input = GND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Analog I/O

Ð

35

35

35

 

 

 

 

Feedthrough

Ð

1.0

1.0

1.0

 

 

 

 

 

 

 

 

 

 

 

NOTES:

 

 

 

 

 

 

 

 

1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High±Speed CMOS Data Book (DL129/D).

 

2. Information on typical parametric values can be found in Chapter 2 of the Motorola High±Speed CMOS Data Book (DL129/D).

 

 

 

 

 

 

 

 

 

 

 

Typical @ 25°C, VCC = 5.0 V

 

 

CPD

Power Dissipation Capacitance (Per Switch) (Figure 13)*

 

 

15

 

 

pF

* Used to determine the no±load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the Motorola High±Speed CMOS Data Book (DL129/D).

3

MOTOROLA

MC54/74HC4066

ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)

 

 

 

 

Limit*

 

 

 

 

VCC

25_C

 

Symbol

Parameter

Test Conditions

V

54/74HC

Unit

 

 

 

 

 

 

BW

Maximum On±Channel Bandwidth or

fin = 1 MHz Sine Wave

4.5

150

MHz

 

Minimum Frequency Response

Adjust fin Voltage to Obtain 0 dBm at VOS

9.0

160

 

 

(Figure 5)

Increase fin Frequency Until dB Meter Reads ± 3 dB

12.0

160

 

 

 

RL = 50 Ω, CL = 10 pF

 

 

 

Ð

Off±Channel Feedthrough Isolation

fin Sine Wave

4.5

± 50

dB

 

(Figure 6)

Adjust fin Voltage to Obtain 0 dBm at VIS

9.0

± 50

 

 

 

fin = 10 kHz, RL = 600 Ω, CL = 50 pF

12.0

± 50

 

 

 

fin = 1.0 MHz, RL = 50 Ω, CL = 10 pF

4.5

± 40

 

 

 

 

9.0

± 40

 

 

 

 

12.0

± 40

 

 

 

 

 

 

 

Ð

Feedthrough Noise, Control to

Vin v 1 MHz Square Wave (tr = tf = 6 ns)

4.5

60

mVPP

 

Switch

Adjust RL at Setup so that IS = 0 A

9.0

130

 

 

(Figure 7)

RL = 600 Ω, CL = 50 pF

12.0

200

 

 

 

RL = 10 kΩ, CL = 10 pF

4.5

30

 

 

 

 

9.0

65

 

 

 

 

12.0

100

 

 

 

 

 

 

 

Ð

Crosstalk Between Any Two Switches

fin Sine Wave

4.5

± 70

dB

 

(Figure 12)

Adjust fin Voltage to Obtain 0 dBm at VIS

9.0

± 70

 

 

 

fin = 10 kHz, RL = 600 Ω, CL = 50 pF

12.0

± 70

 

 

 

fin = 1.0 MHz, RL = 50 Ω, CL = 10 pF

4.5

± 80

 

 

 

 

9.0

± 80

 

 

 

 

12.0

± 80

 

 

 

 

 

 

 

THD

Total Harmonic Distortion

fin = 1 kHz, RL = 10 kΩ, CL = 50 pF

 

 

%

 

(Figure 14)

THD = THDMeasured ± THDSource

 

 

 

 

 

VIS = 4.0 VPP sine wave

4.5

0.10

 

 

 

VIS = 8.0 VPP sine wave

9.0

0.06

 

 

 

VIS = 11.0 VPP sine wave

12.0

0.04

 

* Guaranteed limits not tested. Determined by design and verified by qualification.

MOTOROLA

4

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