MOTOROLA MC74HC373ADT, MC74HC373ADTEL, MC74HC373ADTR2, MC74HC373AH, MC74HC373AFR1 Datasheet

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MOTOROLA MC74HC373ADT, MC74HC373ADTEL, MC74HC373ADTR2, MC74HC373AH, MC74HC373AFR1 Datasheet

MC74HC373A

Octal 3-State Non-Inverting

Transparent Latch

High±Performance Silicon±Gate CMOS

The MC74HC373A is identical in pinout to the LS373. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.

These latches appear transparent to data (i.e., the outputs change asynchronously) when Latch Enable is high. When Latch Enable goes low, data meeting the setup and hold time becomes latched.

The Output Enable input does not affect the state of the latches, but when Output Enable is high, all device outputs are forced to the high±impedance state. Thus, data may be latched even when the outputs are not enabled.

The HC373A is identical in function to the HC573A which has the data inputs on the opposite side of the package from the outputs to facilitate PC board layout.

The HC373A is the non±inverting version of the HC533A.

Output Drive Capability: 15 LSTTL Loads

Outputs Directly Interface to CMOS, NMOS and TTL

Operating Voltage Range: 2.0 to 6.0 V

Low Input Current: 1.0 μA

High Noise Immunity Characteristic of CMOS Devices

In Compliance with the Requirements Defined by JEDEC Standard No. 7A

Chip Complexity: 186 FETs or 46.5 Equivalent Gates

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MARKING

 

 

DIAGRAMS

 

 

20

 

 

PDIP±20

MC74HC373AN

 

N SUFFIX

 

 

AWLYYWW

20

CASE 738

 

 

 

 

 

 

1

 

1

 

 

20

 

 

SOIC WIDE±20

 

HC373A

20

DW SUFFIX

 

 

AWLYYWW

1

CASE 751D

 

 

 

 

 

 

1

20

 

TSSOP±20

 

HC

20

DT SUFFIX

 

373A

1

CASE 948G

 

ALYW

 

 

 

1

A

= Assembly Location

WL

= Wafer Lot

 

 

YY

= Year

 

 

WW = Work Week

ORDERING INFORMATION

Device

Package

Shipping

MC74HC373AN

PDIP±20

1440 / Box

MC74HC373ADW

SOIC±WIDE

38 / Rail

MC74HC373ADWR2

SOIC±WIDE

1000 / Reel

MC74HC373ADT

TSSOP±20

75 / Rail

MC74HC373ADTR2

TSSOP±20

2500 / Reel

Semiconductor Components Industries, LLC, 2000

1

Publication Order Number:

March, 2000 ± Rev. 8

 

MC74HC373A/D

MC74HC373A

LOGIC DIAGRAM

 

 

D0

3

 

 

 

2

Q0

 

 

4

 

 

 

5

 

 

 

D1

 

 

 

Q1

 

 

7

 

 

 

6

 

 

 

D2

 

 

 

Q2

 

DATA

8

 

 

 

9

 

 

 

 

 

 

 

 

 

D3

 

 

 

Q3

NONINVERTING

 

 

 

 

 

INPUTS

 

 

13

 

 

 

12

 

 

D4

 

 

 

Q4

OUTPUTS

 

 

 

 

 

 

14

 

 

 

15

 

 

 

D5

 

 

 

Q5

 

 

17

 

 

 

16

 

 

 

D6

 

 

 

Q6

 

 

18

 

 

 

19

 

 

 

D7

 

 

 

 

 

 

 

 

 

 

Q7

 

 

 

 

 

 

 

 

LATCH ENABLE

11

 

 

 

 

PIN 20 = VCC

 

 

 

 

1

 

 

 

 

PIN 10 = GND

OUTPUT ENABLE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Design Criteria

Value

Units

 

 

 

Internal Gate Count*

46.5

ea

 

 

 

Internal Gate Propagation Delay

1.5

ns

 

 

 

Internal Gate Power Dissipation

5.0

μW

 

 

 

Speed Power Product

0.0075

pJ

 

 

 

*Equivalent to a two±input NAND gate.

 

 

PIN ASSIGNMENT

OUTPUT

1

20

VCC

ENABLE

 

 

 

Q0

2

19

Q7

D0

3

18

D7

D1

4

17

D6

Q1

5

16

Q6

Q2

6

15

Q5

D2

7

14

D5

D3

8

13

D4

Q3

9

12

Q4

GND

10

11

LATCH

 

 

 

ENABLE

 

 

 

FUNCTION TABLE

 

Inputs

 

Output

Output

Latch

 

 

Enable

Enable

D

Q

L

H

H

H

L

H

L

L

L

L

X

No Change

H

X

X

Z

X = Don't Care

Z = High Impedance

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2

MC74HC373A

MAXIMUM RATINGS*

Symbol

Parameter

 

Value

Unit

 

 

 

 

VCC

DC Supply Voltage (Referenced to GND)

± 0.5 to + 7.0

V

Vin

DC Input Voltage (Referenced to GND)

± 0.5 to VCC + 0.5

V

Vout

DC Output Voltage (Referenced to GND)

± 0.5 to VCC + 0.5

V

Iin

DC Input Current, per Pin

 

± 20

mA

Iout

DC Output Current, per Pin

 

± 35

mA

ICC

DC Supply Current, VCC and GND Pins

± 75

mA

PD

Power Dissipation in Still Air,

Plastic DIP²

750

mW

 

 

SOIC Package²

500

 

 

 

TSSOP Package²

450

 

 

 

 

 

 

Tstg

Storage Temperature

 

± 65 to + 150

_C

TL

Lead Temperature, 1 mm from Case for 10 Seconds

 

_C

 

(Plastic DIP, SOIC, SSOP or TSSOP Package)

260

 

 

 

 

 

 

This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high±impedance circuit. For proper operation, Vin and Vout should be constrained to the

range GND v (Vin or Vout) v VCC. Unused inputs must always be

tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.

*Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions.

²Derating Ð Plastic DIP: ± 10 mW/ _C from 65_ to 125_C SOIC Package: ± 7 mW/_C from 65_ to 125_C

TSSOP Package: ± 6.1 mW/_C from 65_ to 125_C

For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High±Speed CMOS Data Book (DL129/D).

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

 

Min

Max

Unit

 

 

 

 

 

 

VCC

DC Supply Voltage (Referenced to GND)

 

2.0

6.0

V

Vin, Vout

DC Input Voltage, Output Voltage (Referenced to GND)

0

VCC

V

TA

Operating Temperature, All Package Types

 

± 55

+ 125

_C

tr, tf

Input Rise and Fall Time

VCC = 2.0 V

0

1000

ns

 

(Figure 1)

VCC = 4.5 V

0

500

 

 

 

VCC = 6.0 V

0

400

 

DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)

 

 

 

 

 

Guaranteed Limit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC

± 55 to

 

 

 

Symbol

Parameter

Test Conditions

V

25_C

v 85_C

v 125_C

Unit

 

 

 

 

 

 

 

 

VIH

Minimum High±Level Input

Vout = VCC ± 0.1 V

2.0

1.5

1.5

1.5

V

 

Voltage

|Iout| v 20

μA

3.0

2.1

2.1

2.1

 

 

 

 

 

4.5

3.15

3.15

3.15

 

 

 

 

 

6.0

4.2

4.2

4.2

 

 

 

 

 

 

 

 

 

VIL

Maximum Low±Level Input

Vout = 0.1 V

2.0

0.5

0.5

0.5

V

 

Voltage

|Iout| v 20 μA

3.0

0.9

0.9

0.9

 

 

 

 

 

4.5

1.35

1.35

1.35

 

 

 

 

 

6.0

1.8

1.8

1.8

 

 

 

 

 

 

 

 

 

 

VOH

Minimum High±Level Output

Vin = VIH

μA

2.0

1.9

1.9

1.9

V

 

Voltage

|Iout| v 20

4.5

4.4

4.4

4.4

 

 

 

 

 

6.0

5.9

5.9

5.9

 

 

 

 

 

 

 

 

 

 

 

 

Vin = VIH

|Iout| v 2.4 mA

3.0

2.48

2.34

2.2

 

 

 

 

|Iout| v 6.0 mA

4.5

3.98

3.84

3.7

 

 

 

 

|Iout| v 7.8 mA

6.0

5.48

5.34

5.2

 

VOL

Maximum Low±Level Output

Vin = VIL

μA

2.0

0.1

0.1

0.1

V

 

Voltage

|Iout| v 20

4.5

0.1

0.1

0.1

 

 

 

 

 

6.0

0.1

0.1

0.1

 

 

 

 

 

 

 

 

 

 

 

 

Vin = VIL

|Iout| v 2.4 mA

3.0

0.26

0.33

0.4

 

 

 

 

|Iout| v 6.0 mA

4.5

0.26

0.33

0.4

 

 

 

 

|Iout| v 7.8 mA

6.0

0.26

0.33

0.4

 

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