Integrated Device Technology Inc IDT7016L20GB, IDT7016L20J, IDT7016L20JB, IDT7016L20PF, IDT7016L20PFB Datasheet

HIGH-SPEED	IDT7016S/L
16K x 9 DUAL-PORT
STATIC RAM

Integrated Device Technology, Inc.

FEATURES:

•True Dual-Ported memory cells which allow simultaneous access of the same memory location

•High-speed access

—Military: 20/25/35ns (max.)

—Commercial:12/15/20/25/35ns (max.)

•Low-power operation

—IDT7016S

Active: 750mW (typ.) Standby: 5mW (typ.)

—IDT7016L

Active: 750mW (typ.) Standby: 1mW (typ.)

•IDT7016 easily expands data bus width to 18 bits or more using the Master/Slave select when cascading more than one device

•M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave

•Busy and Interrupt Flags

•On-chip port arbitration logic

•Full on-chip hardware support of semaphore signaling between ports

•Fully asynchronous operation from either port

•Devices are capable of withstanding greater than 2001V electrostatic discharge

•TTL-compatible, single 5V (±10%) power supply

•Available in ceramic 68-pin PGA, 68-pin PLCC, and an 80-pin TQFP

•Industrial temperature range (–40°C to +85°C) is available, tested to military electrical specifications

DESCRIPTION:

The IDT7016 is a high-speed 16K x 9 Dual-Port Static RAMs. The IDT7016 is designed to be used as standalone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 18-bit-or-more wider systems.

FUNCTIONAL BLOCK DIAGRAM

OEL	OER
CEL	CER
R/WL	R/WR

I/O0L- I/O8L		I/O	I/O	I/O0R-I/O8R
		Control	Control
(1,2)				(1,2)
BUSYL
				BUSYR
A13L	Address	MEMORY	Address	A13R
A0L	Decoder	ARRAY	Decoder	A0R
		14	14
		ARBITRATION
	CEL	INTERRUPT	CER
		SEMAPHORE
	OEL		OER
		LOGIC
	R/WL		R/WR
SEML				SEMR
(2)
				(2)
INTL
		M/S		INTR
				3190 drw 01

NOTES:

1.In MASTER mode: BUSY is an output and is a push-pull driver In SLAVE mode: BUSY is input.

2.BUSY outputs and INT outputs are non-tri-stated push-pull drivers.

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

MILITARY AND COMMERCIAL TEMPERATURE RANGES		OCTOBER 1996
©1996 Integrated Device Technology, Inc.	For latest information contact IDT’s web site at www.idt.com or fax-on-demand at 408-492-8391.	DSC-3190/2

6.13

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IDT7016S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM	MILITARY AND COMMERCIAL TEMPERATURE RANGES

Using the IDT MASTER/SLAVE Dual-Port RAM approach in 18-bit or wider memory system applications results in fullspeed, error-free operation without the need for additional discrete logic.

This device provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low

standby power mode.

Fabricated using IDT’s CMOS high-performance technology, these devices typically operate on only 750mW of power.

The IDT7016 is packaged in a ceramic 68-pin PGA, a 64pin PLCC and an 80-pin TQFP (Thin Quad FlatPack). Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.

PIN CONFIGURATIONS(1,2)

INDEX

I/O1L I/O0L I/O8L OEL R/WL SEML CEL

N/C A13L VCC A12L

A11L A10L

A9L A8L A7L A6L

I/O2L	9						8			7			6			5			4		3				2			1			68 67 66 65 64														63 62 61								A5L
		10																																											60
I/O3L		11																																											59								A4L
I/O4L		12																																											58								A3L
I/O5L		13																																											57								A2L
GND		14																																											56								A1L
I/O6L		15																																											55								A0L
I/O7L		16																						IDT7016																					54									L
VCC																									J68-1																												INT
		17																																											53								BUSYL
GND		18																							PLCC																				52								GND
I/O0R		19																			TOP VIEW(3)																								51								M/	S
I/O1R		20																																											50									R
I/O2R																																																					BUSY
		21																																											49								INTR
VCC		22																																											48								A0R
I/O3R		23																																											47								A1R
I/O4R		24																																											46								A2R
I/O5R		25																																											45								A3R
I/O6R		26																																											44								A4R
		27					28 29						30 31						32 33 34 35												36 37 38 39											40 41 42 43

I/O7R

I/O8R ROE R/WR SEMR CER

N/C A13R GND A12R A11R A10R

A9R A8R

A7R A6R A5R

NOTES:

1.All VCC pins must be connected to power supply.

2.All GND pins must be connected to ground supply.

3.This text does not imply orientation of Part-Mark.

3190 drw 02

PIN NAMES

Left Port		Right Port	Names
CEL		CER	Chip Enable
R/WL		R/WR	Read/Write Enable
OEL		OER	Output Enable
A0L – A13L		A0R – A13R	Address
I/O0L – I/O8L		I/O0R – I/O8R	Data Input/Output
SEML		SEMR	Semaphore Enable
INTL		INTR	Interrupt Flag
BUSYL		BUSYR	Busy Flag
	M/S		Master or Slave Select
	VCC		Power
	GND		Ground
			3190 tbl 01

6.13

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IDT7016S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM	MILITARY AND COMMERCIAL TEMPERATURE RANGES

PIN CONFIGURATIONS (CONT'D) (1,2)

					I/O1L		I/O0L			I/O8L			OEL			R/WL			SEM L			CEL				NC		NC				A13L		VCC		A12L		A11L		A10L		A9L		A8L		A7L		A6L		NC	NC
INDEX
NC				1	80		79			78			77			76			75			74			73			72			71			70		69		68		67		66		65		64	63		62		61	60
																																																				59
I/O2L				2
																																																				58
I/O3L				3
																																																				57
I/O4L				4
																																																				56
I/O5L				5
																																																				55
GND				6
																																																				54
I/O6L				7																										IDT7016
																																																				53
I/O7L				8
																															PN-80																					52
VCC				9
																															TQFP
																																																				51
NC				10																							TOP VIEW(3)
																																																				50
GND				11
I/O0R				12																																																49
																																																				48
I/O1R				13
																																																				47
I/O2R				14
																																																				46
VCC				15
																																																				45
I/O3R				16
																																																				44
I/O4R			17
																																																				43
I/O5R			18
																																																				42
I/O6R			19
																																																				41
NC			20		21		22			23			24			25			26			27			28			29			30			31		32		33		34		35		36		37	38		39		40
					7R		I/O8R			OER			R/WR			SEMR			CER			NC			NC			A13R				GND		A12R		A11R		A10R		A9R		A8R		A7R		A6R		A5R		NC	NC
					I/O

NC

A5L

A4L

A3L

A2L

A1L

A0L

INTL

BUSYL

GND

M/S

BUSYR

INTR

A0R

A1R

A2R

A3R

A4R

NC

NC

3190 drw 03

	11			51	50	48	46	44		42	40	38	36
				A5L	A4L	A2L	A0L	BUSYL		M/S	INTR	A1R	A3R
	10	53		52	49	47	45	43		41	39	37	35		34
		A7L		A6L	A3L	A1L	INTL	GND	BUSYR		A0R	A2R	A4R		A5R
	09	55		54									32		33
		A9L		A8L									A7R		A6R
	08	57		56									30		31
		A11L		A10L									A9R		A8R
	07	59		58			IDT7016						28		29
		VCC		A12L									A11R		A10R
								G68-1
	06	61		60			68-PIN PGA						26		27
		N/C		A13L									GND		A12R
	05	63		62			TOP VIEW(3)						24		25
		SEML		CEL									N/C		A13R
	04	65		64									22		23
		OE	L	R/WL									SEMR		CE	R
	03	67		66									20		21
		I/O0L		I/O8L									OE	R	R/WR
	02	68		1	3	5	7	9		11	13	15	18		19
		I/O1L		I/O2L	I/O4L	GND	I/O7L	GND		I/O1R	VCC	I/O4R	I/O7R		I/O8R
	01			2	4	6	8	10		12	14	16	17
				I/O3L	I/O5L	I/O6L	VCC	I/O0R		I/O2R	I/O3R	I/O5R	I/O6R
	NOTES:	A		B	C	D	E	F		G	H	J	K		L
	INDEX
	1. All Vcc pins must be connected to the power supply.														3190 drw 04
	2. All GND pins must be connected to the ground supply.
	3. This text does not indicate orientation of the actual part-marking.

6.13

3

IDT7016S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM	MILITARY AND COMMERCIAL TEMPERATURE RANGES

TRUTH TABLE I – NON-CONTENTION READ/WRITE CONTROL

	Inputs(1)			Outputs
CE	R/W	OE	SEM	I/O0-8	Mode
H	X	X	H	High-Z	Deselected: Power-Down
L	L	X	H	DATAIN	Write to Memory
L	H	L	H	DATAOUT	Read Memory
X	X	H	X	High-Z	Outputs Disabled
NOTE:					3190 tbl 02

1.Condition: A0L — A13L is not equal to A0R — A13R.

					(1)
TRUTH TABLE II – SEMAPHORE READ/WRITE CONTROL
	Inputs			Outputs
CE	R/W	OE	SEM	I/O0-8	Mode
H	H	L	L	DATAOUT	Read Semaphore Flag Data Out (I/O0 - I/O8)
H	u	X	L	DATAIN	Write I/O0 into Semaphore Flag
L	X	X	L	—	Not Allowed
NOTE:					3190 tbl 03

1. There are eight semaphore flags written to via I/O0 and read from all I/O's (I/O0-I/O8). These eight semaphores are addressed by A0-A2.

ABSOLUTE MAXIMUM RATINGS(1)

Symbol	Rating	Commercial	Military	Unit
VTERM(2)	Terminal Voltage	–0.5 to +7.0	–0.5 to +7.0	V
	with Respect
	to GND
TA	Operating	0 to +70	–55 to +125	°C
	Temperature
TBIAS	Temperature	–55 to +125	–65 to +135	°C
	Under Bias
TSTG	Storage	–55 to +125	–65 to +150	°C
	Temperature
IOUT	DC Output	50	50	mA
	Current
NOTES:			3190 tbl 04

1.Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

2.VTERM must not exceed Vcc + 0.5V for more than 25% of the cycle time or 10ns maximum, and is limited to < 20mA for the period of VTERM > Vcc + 0.5V.

CAPACITANCE(1)

(TA = +25°C, f = 1.0MHz, TQFP ONLY)

Symbol	Parameter	Conditions(2)	Max.	Unit
CIN	Input Capacitance	VIN = 3dV	9	pF
COUT	Output Capacitance	VOUT = 3dV	10	pF
NOTES:				3190 tbl 07

1.This parameter is determined by device characteristics but is not production tested.

2.3dV references the interpolated capacitance when the input and output signals switch from 0V to 3V or from 3V to 0V .

RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE

	Ambient
Grade	Temperature	GND	VCC
Military	–55°C to +125°C	0V	5.0V ± 10%
Commercial	0°C to +70°C	0V	5.0V ± 10%

3190 tbl 05

RECOMMENDED DC OPERATING

CONDITIONS

Symbol	Parameter	Min.	Typ.	Max.	Unit
VCC	Supply Voltage	4.5	5.0	5.5	V
GND	Supply Voltage	0	0	0	V
VIH	Input High Voltage	2.2	—	6.0(2)	V
VIL	Input Low Voltage	–0.5(1)	—	0.8	V
NOTES:				3190 tbl 06

1.VIL > -1.5V for pulse width less than 10ns.

2.VTERM must not exceed Vcc + 0.5V.

6.13

4

IDT7016S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM	MILITARY AND COMMERCIAL TEMPERATURE RANGES

DC ELECTRICAL CHARACTERISTICS OVER THE

OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE (VCC = 5.0V ± 10%)

				7016S		7016L
Symbol	Parameter	Test Conditions	Min.		Max.	Min.		Max.	Unit
|ILI|	Input Leakage Current(1)	VCC = 5.5V, VIN = 0V to VCC	—		10	—		5	μA
|ILO|	Output Leakage Current	CE = VIH, VOUT = 0V to VCC	—		10	—		5	μA
VOL	Output Low Voltage	IOL = 4mA	—		0.4	—		0.4	V
VOH	Output High Voltage	IOH = -4mA	2.4		—	2.4		—	V
NOTE:									3190 tbl 08

1. At Vcc < 2.0V, Input leakages are undefined.

DC ELECTRICAL CHARACTERISTICS OVER THE

OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(1) (VCC = 5.0V ± 10%)

					7016X12		7016X15
		Test			Com'l. Only		Com'l. Only
Symbol	Parameter	Condition	Version		Typ.(2)	Max.	Typ.(2)	Max.	Unit
ICC	Dynamic Operating	CE = VIL, Outputs Open	MIL.	S	—	—	—	—	mA
	Current	SEM = VIH		L	—	—	—	—
	(Both Ports Active)	f = fMAX(3)	COM’L.	S	170	325	170	310
				L	170	275	170	260
ISB1	Standby Current	CER = CEL = VIH	MIL.	S	—	—	—	—	mA
	(Both Ports — TTL	SEMR = SEML = VIH		L	—	—	—	—
	Level Inputs)	f = fMAX(3)	COM’L.	S	25	70	25	60
				L	25	60	25	50
ISB2	Standby Current	CE"A"=VIL and CE"B" = VIH(5)	MIL.	S	—	—	—	—	mA
	(One Port — TTL	Active Port Outputs Open		L	—	—	—	—
	Level Inputs)	f = fMAX(3)	COM’L.	S	105	200	105	190
		SEMR= SEML = VIH		L	105	170	105	160
ISB3	Full Standby Current	Both Ports CEL and	MIL.	S	—	—	—	—	mA
	(Both Ports — All	CER > VCC - 0.2V		L	—	—	—	—
	CMOS Level Inputs)	VIN > VCC - 0.2V or	COM’L.	S	1.0	15	1.0	15
		VIN < 0.2V, f = 0(4)		L	0.2	5	0.2	5
		SEMR = SEML > VCC - 0.2V
ISB4	Full Standby Current	CE"A"< 0.2V and	MIL.	S	—	—	—	—	mA
	(One Port — All	CE"B" > VCC - 0.2V(5)		L	—	—	—	—
	CMOS Level Inputs)	SEMR = SEML > VCC - 0.2V
		VIN>VCC - 0.2V or VIN<0.2V	COM'L.	S	100	180	100	170
		Active Port Outputs Open,		L	100	150	100	140
		f = fMAX(3)
NOTES:									3190 tbl 09

1."X" in part numbers indicates power rating (S or L).

2.VCC = 5V, TA = +25°C, and are not production tested. ICCDC = 120mA(typ.)

3.At f = fMAX, address and I/Os are cycling at the maximum frequency read cycle of 1/tRC.

4.f = 0 means no address or control lines change.

5.Port "A" may be either left or right port. Port "B" is the opposite of port "A".

6.13

5

IDT7016S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM	MILITARY AND COMMERCIAL TEMPERATURE RANGES

DC ELECTRICAL CHARACTERISTICS OVER THE

OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(1)(Cont'd) (VCC = 5.0V ± 10%)

					7016X20		7016X25		7016X35
		Test
Symbol	Parameter	Condition	Version		Typ.(2)	Max.	Typ.(2)	Max.	Typ.(2)	Max.	Unit
ICC	Dynamic Operating	CE = VIL, Outputs Open	MIL.	S	—	—	155	340	150	300	mA
	Current	SEM = VIH		L	—	—	155	280	150	250
		f = fMAX(3)
	(Both Ports Active)		COM’L.	S	160	290	155	265	150	250
				L	160	240	155	220	150	210
ISB1	Standby Current	CEL = CER = VIH	MIL.	S	—	—	16	80	13	80	mA
	(Both Ports — TTL	SEMR = SEML = VIH		L	—	—	16	65	13	65
		f = fMAX(3)
	Level Inputs)		COM’L.	S	20	60	16	60	13	60
				L	20	50	16	50	13	50
ISB2	Standby Current	CE"A"=VIL and CE"B"=VIH(5)	MIL.	S	—	—	90	215	85	190	mA
	(One Port — TTL	Active Port Outputs Open		L	—	—	90	180	85	160
	Level Inputs)	f = fMAX(3)
			COM’L.	S	95	180	90	170	85	155
		SEMR = SEML = VIH		L	95	150	90	140	85	130
ISB3	Full Standby Current	Both Ports CEL and	MIL.	S	—	—	1.0	30	1.0	30	mA
	(Both Ports — All	CER > VCC - 0.2V		L	—	—	0.2	10	0.2	10
	CMOS Level Inputs)	VIN > VCC - 0.2V or	COM’L.	S	1.0	15	1.0	15	1.0	15
		VIN < 0.2V, f = 0(4)		L	0.2	5	0.2	5	0.2	5
		SEMR = SEML > VCC - 0.2V
ISB4	Full Standby Current	CE"A"< 0.2V and	MIL.	S	—	—	85	200	80	175	mA
	(One Port — All	CE"B" > VCC - 0.2V(5)		L	—	—	85	170	80	150
	CMOS Level Inputs)	SEMR = SEML > VCC - 0.2V
		VIN > VCC - 0.2V or	COM’L.	S	90	155	85	145	80	135
		VIN < 0.2V		L	90	130	85	120	80	110
		Active Port Outputs Open,
		f = fMAX(3)
NOTES:										3190 tbl 10

1."X" in part numbers indicates power rating (S or L).

2.VCC = 5V, TA = +25°C, and are not production tested. ICCDC = 120mA(typ.)

3.At f = fMAX, address and I/Os are cycling at the maximum frequency read cycle of 1/tRC.

4.f = 0 means no address or control lines change.

5.Port "A" may be either left or right port. Port "B" is the opposite of port "A".

OUTPUT LOADS AND AC TEST CONDITIONS

Input Pulse Levels	GND to 3.0V
Input Rise/Fall Times(1)	5ns Max.
Input Timing Reference Levels	1.5V
Output Reference Levels	1.5V
Output Load	Figures 1 and 2
NOTE:
1. 3ns max for tAA = 12ns

	5V
	893Ω
DATAOUT
BUSY
INT
347Ω	30pF

Figure 1. AC Output Test Load

5V

893Ω

DATAOUT

347Ω 5pF

3190 drw 06

Figure 2. Output Test Load ( for tLZ, tHZ, tWZ, tOW)

Including scope and jig.

6.13

6