Integrated Device Technology Inc IDT54FCT162344ETE, IDT54FCT162344ETEB, IDT54FCT162344ETPA, IDT54FCT162344ETPAB, IDT54FCT162344ETPFB Datasheet

FAST CMOS ADDRESS/ IDT54/74FCT162344AT/CT/ET

CLOCK DRIVER

Integrated Device Technology, Inc.

FEATURES:

•0.5 MICRON CMOS Technology

•Ideal for address line driving and clock distribution

•8 banks with 1:4 fanout and 3-state

•Typical tSK(o) (Output Skew) < 500ps

•Balanced Output Drivers: ±24mA (commercial),

±16mA (military)

•Reduced system switching noise

•ESD > 2000V per MIL-STD-883, Method 3015;

>200V using machine model (C = 200pF, R = 0)

•Packages include 25 mil pitch SSOP, 19.6 mil pitch TSSOP, 15.7 mil pitch TVSOP and 25 mil pitch Cerpack

•Extended commercial range of -40°C to +85°C

•VCC = 5V ±10%

•Low input and output leakage ≤ 1μA (max.)

DESCRIPTION:

The FCT162344AT/CT/ET is a 1:4 address line driver built using advanced dual metal CMOS technology. This highspeed, low power device provides the ability to fanout to memory arrays. Eight banks, each with a fanout of 4, and 3- state control provide efficient address distribution. One or more banks may be used for clock distribution.

The FCT162344AT/CT/ET has balanced output drive with current limiting resistors. This offers low ground bounce, minimal undershoot and controlled output fall times reducing the need for external series terminating resistors.

A large number of power and ground pins and TTL output swings also ensure reduced noise levels. All inputs are designed with hysteresis for improved noise margins.

FUNCTIONAL BLOCK DIAGRAM

OE1	OE3
B11	B51
A1	A5
B14	B54
B21	B61
A2	A6
B24	B64

OE2	OE4
B31	B71
A3	A7
B34	B74
B41	B81
A4	A8
B44	B84

3069 drw 01

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

MILITARY AND COMMERCIAL TEMPERATURE RANGES			AUGUST 1996
©1996 Integrated Device Technology, Inc.		5.6	DSC-3069/3
			1

IDT54/74FCT162344AT/CT/ET
FAST CMOS ADDRESS LINE DRIVER	MILITARY AND COMMERCIAL TEMPERATURE RANGES

PIN CONFIGURATIONS

OE1		1		56		OE4
B11		2		55		B81
B12		3		54		B82
GND		4		53		GND
B13		5		52		B83
B14		6		51		B84
VCC		7		50		VCC
A1		8		49		A8
B21		9		48		B71
B22		10		47		B72
GND		11		46		GND
B23		12		45		B73
B24		13		44		B74
A2		14	SO56-1	43		A7
A3		15	SO56-2
			SO56-3	42		A6
B31		16		41		B61
B32		17		40		B62
GND		18		39		GND
B33		19		38		B63
B34		20		37		B64
A4		21		36		A5
VCC		22		35		VCC
B41		23		34		B51
B42		24		33		B52
GND		25		32		GND
B43		26		31		B53
B44		27		30		B54
OE2		28	SSOP/	29		OE3
		TSSOP/TVSOP
			TOP VIEW		3069 drw 02

OE1		1		56		OE4
B11		2		55		B81
B12		3		54		B82
GND		4		53		GND
B13		5		52		B83
B14		6		51		B84
VCC		7		50		VCC
A1		8		49		A8
B21		9		48		B71
B22		10		47		B72
GND		11		46		GND
B23		12		45		B73
B24		13		44		B74
A2		14	E56-1	43		A7
A3		15		42		A6
B31		16		41		B61
B32		17		40		B62
GND		18		39		GND
B33		19		38		B63
B34		20		37		B64
A4		21		36		A5
VCC		22		35		VCC
B41		23		34		B51
B42		24		33		B52
GND		25		32		GND
B43		26		31		B53
B44		27		30		B54
OE2		28		29		OE3

CERPACK

TOP VIEW

3069 drw 03

5.6

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IDT54/74FCT162344AT/CT/ET
FAST CMOS ADDRESS LINE DRIVER	MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN DESCRIPTION	FUNCTION TABLE(1)

Pin Names	Description
OEx	3–State Output Enable Inputs (Active LOW)
Ax	Inputs
Bxx	3-State Outputs
	3069 tbl 01

ABSOLUTE MAXIMUM RATINGS(1)

Symbol	Description	Max.	Unit
VTERM(2)	Terminal Voltage with Respect to	–0.5 to +7.0	V
	GND
VTERM(3)	Terminal Voltage with Respect to	–0.5 to	V
	GND	VCC +0.5
TSTG	Storage Temperature	–65 to +150	°C
IOUT	DC Output Current	–60 to +120	mA
NOTES:		3069 lnk 03

1.Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

2.All device terminals except FCT162XXXT Output and I/O terminals.

3.Output and I/O terminals for FCT162XXXT.

Inputs		Outputs
OEx	Ax	Bxx
L	L	L
L	H	H
H	X	Z
NOTE:		3069 tbl 02

1.H = HIGH Voltage Level X = Don’t Care

L = LOW Voltage Level Z = High Impedance

CAPACITANCE (TA = +25°C, f = 1.0MHz)

Symbol	Parameter(1)	Conditions	Typ.	Max.	Unit
CIN	Input	VIN = 0V	3.5	6.0	pF
	Capacitance
COUT	Output	VOUT = 0V	3.5	8.0	pF
	Capacitance
NOTE:				3069 lnk 04

1. This parameter is measured at characterization but not tested.

5.6

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