IDT74FCT540T
Integrated Device Technology Inc. IDT74FCT540T, IDT74FCT540CT, IDT54FCT540T, IDT54FCT540AT, IDT54FCT540CT User Manual
...
©2005 Integrated Device Technology, Inc.
MARCH 2005
DSC-3089/05
1
Features
◆◆
◆◆
◆
High-speed access and chip select times
– Military: 20/25/35/45/55/70/90/120/150ns (max.)
– Industrial: 20/25/35/45ns (max.)
– Commercial: 15/20/25/35/45ns (max.)
◆◆
◆◆
◆
Low-power consumption
◆◆
◆◆
◆
Battery backup operation
– 2V data retention voltage (LA version only)
◆◆
◆◆
◆
Produced with advanced CMOS high-performance
technology
◆◆
◆◆
◆
CMOS process virtually eliminates alpha particle soft-error
rates
◆◆
◆◆
◆
Input and output directly TTL-compatible
◆◆
◆◆
◆
Static operation: no clocks or refresh required
◆◆
◆◆
◆
Available in ceramic and plastic 24-pin DIP, 24-pin Thin Dip,
24-pin SOIC and 24-pin SOJ
◆◆
◆◆
◆
Military product compliant to MIL-STD-833, Class B
Description
The IDT6116SA/LA is a 16,384-bit high-speed static RAM
organized as 2K x 8. It is fabricated using IDT's high-performance,
high-reliability CMOS technology.
Access times as fast as 15ns are available. The circuit also offers a
reduced power standby mode. When CS goes HIGH, the circuit will
automatically go to, and remain in, a standby power mode, as long
as CS remains HIGH. This capability provides significant system level
power and cooling savings. The low-power (LA) version also offers a
battery backup data retention capability where the circuit typically
consumes only 1µW to 4µW operating off a 2V battery.
All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully
static asynchronous circuitry is used, requiring no clocks or refreshing
for operation.
The IDT6116SA/LA is packaged in 24-pin 600 and 300 mil plastic or
ceramic DIP, 24-lead gull-wing SOIC, and 24-lead J-bend SOJ providing
high board-level packing densities.
Military grade product is manufactured in compliance to the latest
version of MIL-STD-883, Class B, making it ideally suited to military
temperature applications demanding the highest level of performance and
reliability.
Functional Block Diagram
CS
A
0
A
10
I
/O
0
I/O
7
OE
WE
128 X 128
MEMORY
ARRAY
I/O CONTROL
ADDRESS
DECODER
INPUT
DATA
CIRCUIT
CONTROL
CIRCUIT
GND
3089 drw 01
V
CC
,
CMOS Static RAM
16K (2K x 8-Bit)
IDT6116SA
IDT6116LA
2
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
Pin Configurations
Absolute Maximum Ratings
(1)
Truth Table
(1)
Pin Description
Capacitance (TA = +25°C, f = 1.0 MHZ)
DIP/SOIC/SOJ
Top View
3089 drw 02
5
6
7
8
9
10
11
12
G
ND
1
2
3
4
24
23
22
21
20
19
18
17
P24-2
P24-1
D24-2
D24-1
SO24-2
SO24-4
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
V
CC
A
9
WE
A
10
I/O
5
I/O
4
OE
16
15
14
13
A
7
A
6
I/O
7
I/O
6
CS
A
8
I/O
2
I/O
3
,
NOTE:
1. This parameter is determined by device characterization, but is not production
tested.
Symbol Parameter
(1)
Conditions Max. Unit
C
IN
Inp ut Cap ac i tance V
IN
= 0V 8 pF
C
I/O
I/O Cap ac itanc e V
OUT
= 0V 8 pF
3089 tbl 03
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. VTERM must not exceed VCC +0.5V.
Symbol Rating Com'l. Mil. Unit
V
TERM
(2)
Terminal Vo ltage
with Respect
to GND
-0.5 to +7.0 -0.5 to +7.0 V
T
A
Operating
Temperature
0 to +70 -55 to +125
o
C
T
BIAS
Temperature
Under Bias
-55 to +125 -65 to +135
o
C
T
STG
Storage Temperature -55 to +125 -65 to +150
o
C
P
T
Po we r Dis si p atio n 1. 0 1. 0 W
I
OUT
DC Output Current 50 50 mA
3 0 89 t b l 04
Name Description
A
0
- A
10
Address Inputs
I/O
0
- I/O
7
Data Inp ut/ Outp ut
CS
Chip Se le ct
WE
Write Enable
OE
Output Enable
V
CC
Power
GND Ground
3089 tbl 01
NOTE:
1. H = VIH, L = VIL, X = Don't Care.
Mode
CS OE WE
I/O
Standby H X X High-Z
Read L L H DATA
OUT
Read L H H High-Z
Write L X L DATA
IN
3 0 89 t b l 02
6.42
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
3
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC, only address inputs are cycling at fMAX, f = 0 means address inputs are not changing.
DC Electrical Characteristics
(1)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
DC Electrical Characteristics
(VCC = 5.0V ± 10%)
Recommended Operating
Temperature and Supply Voltage
Recommended DC
Operating Conditions
NOTES:
1. V
IL (min.) = –3.0V for pulse width less than 20ns, once per cycle.
2. V
IN must not exceed VCC +0.5V.
Grade
Ambient
Temperature GND Vcc
Milita ry -55
O
C to + 125
O
C0V 5.0V ± 10%
Industrial -40
O
C to + 85
O
C0V 5.0V ± 10%
Commercial 0
O
C to +70
O
C0V 5.0V ± 10%
3089 tbl 05
Symbol Parameter Min. Typ. Max. Unit
V
CC
Supp ly Voltage 4.5 5.0 5.5
(2)
V
GND Ground 0 0 0 V
V
IH
Input High Vol tage 2.2 3.5 V
CC
+0.5 V
V
IL
Inp ut Low Vo ltag e -0. 5
(1)
____
0.8 V
3089 tbl 06
Symbol Parameter Test Conditions
IDT6116SA IDT6116LA
UnitMin. Max. Min. Max.
|I
LI
|
Input Leakage Current
V
CC
= Max.,
V
IN
=
GND to V
CC
MIL.
COM'L.
____
____
10
5
____
____
5
2
µA
|I
LO
| Output Leakag e Curre nt V
CC
= Max., CS = V
IH
,
V
OUT
= GND to V
CC
MIL.
COM'L.
____
____
10
5
____
____
5
2
µA
V
OL
Output Low Voltage I
OL
= 8mA, V
CC
= Min.
____
0.4
____
0.4 V
V
OH
Outp ut Hi g h Vol tag e I
OH
= -4mA, V
CC
= Min. 2.4
____
2.4
____
V
3089 tbl 07
Symbol Parameter Power
6116SA15
6116SA20
6116LA20
6116SA25
6116LA25
6116SA35
6116LA35
Unit
Com'l
Only
Com'l
& In d
Mil
Com'l
& In d
Mil
Com'l.
& Ind. M il
I
CC1
Operating Power Supply Current
CS <
V
IL
, Outputs Ope n
V
CC
= Max., f
=
0
SA 105 105 130 80 90 80 90
mA
LA 95 95 120 75 85 75 85
I
CC2
Dynamic Operating Current
CS < V
IL
, Outputs Ope n
V
CC
= Max., f = f
MAX
(2)
SA 150 130 150 120 135 100 115
mA
LA 140 120 140 110 125 95 105
I
SB
Standby Po wer Supply Current
(TTL Le ve l)
CS >
V
IH
, Outp uts Op en
V
CC
= Max., f = f
MAX
(2)
SA 40 40 50 40 45 25 35
mA
LA 35 35 45 35 40 25 30
I
SB1
Full Standby Power Supply Current
(CMOS Le v el )
CS > V
HC
, V
CC
= Max.,
V
IN
< V
LC
or V
IN
> V
HC
, f = 0
SA 2 2 10 2 10 2 10
mA
LA 0.1 0.1 0.9 0.1 0.9 0.1 0.9
3089 tbl 08
4
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
NOTES:
1. TA = + 25°C
2. tRC = Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
DC Electrical Characteristics
(1)
(continued)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC, only address inputs are toggling at fMAX, f = 0 means address inputs are not changing.
Data Retention Characteristics Over All Temperature Ranges
(LA Version Only) (VLC = 0.2V, VHC = VCC – 0.2V)
Symbol Parameter Power
6116SA45
6116LA45
6116SA55
6116LA55
6116SA70
6116LA70
6116SA90
6116LA90
6116SA120
6116LA120
6116SA150
6116LA150
Unit
Com'l
& Ind
Mil Mil Only Mil Only Mil Only Mil Only Mil Only
I
CC1
Operating Power Supply
Current , CS <
V
IL
,
Outputs Open
V
CC
= Max., f
=
0
SA 80 90 90 90 90 90 90
mA
LA 75 85 85 85 85 85 85
I
CC2
Dynamic Operating
Current , CS <
V
IL
,
Outputs Open
V
CC
= Max., f = f
MAX
(2)
SA 100 100 100 100 100 100 90
mA
LA 90 95 90 90 85 85 85
I
SB
Standby Power Supply
Curren t (TTL Lev el)
CS >
V
IH
, Outp uts Op en
V
CC
= Max., f = f
MAX
(2)
SA 25 25 25 25 25 25 25
mA
LA 20 20 20 20 25 15 15
I
SB1
Full Standby Power
Supply Current (CMOS
Level), CS >
V
HC
,
V
CC
= Max., V
IN
< V
LC
or V
IN
> V
HC
, f = 0
SA 2 10 10 10 10 10 10
mA
LA 0.1 0.9 0.9 0.9 0.9 0.9 0.9
3089 tbl 09
Typ.
(1)
V
CC
@
Max.
V
CC
@
Symbol Parameter Test Condition M in. 2.0V 3. 0V 2.0V 3.0V Unit
V
DR
V
CC
fo r Da ta R e tent i o n
____
2.0
____ ____ ____ ____
V
I
CCDR
Data Re te ntio n Cu rre nt MIL.
COM'L.
____
____
0.5
0.5
1.5
1.5
200
20
300
30
µA
t
CDR
(3)
Chip De s e le c t to Data
Retention Time
CS >
V
HC
V
IN
> V
HC
or < V
LC
____
0
____ ____ ____
ns
t
R
(3)
Op e ration Re c o ve ry Tim e
t
RC
(2)
____ ____ ____ ____
ns
I
I
LI
I
Input Leakag e Current
____ ____ ____
22
µA
3089 tbl 10
Loading...