Integrated Device Technology Inc IDT6198L20LB, IDT6198L20Y, IDT6198L20YB, IDT6198L25D, IDT6198L25DB Datasheet

®

CMOS STATIC RAM

IDT6198S

64K (16K x 4-BIT)

IDT6198L

with Output Control

Integrated Device Technology, Inc.

FEATURES:

•High-speed (equal access and cycle times)

—Military: 20/25/35/45/55/70/85ns (max.)

—Commercial: 15/20/25/35ns (max.)

•Output Enable (OE) pin available for added system flexibility

•Low-power consumption

•JEDEC compatible pinout

•Battery back-up operation—2V data retention (L version only)

•24-pin CERDIP, high-density 28-pin leadless chip carrier, and 24-pin SOJ

•Produced with advanced CMOS technology

•Bidirectional data inputs and outputs

•Military product compliant to MIL-STD-883, Class B

DESCRIPTION:

The IDT6198 is a 65,536-bit high-speed static RAM organized as 16K x 4. It is fabricated using IDT’s high-perfor- mance, high-reliability technology—CMOS. This state-of-the- art technology, combined with innovative circuit design tech-

niques, provides a cost-effective approach for memory intensive applications. Timing parameters have been specified to meet the speed demands of the IDT79R3000 RISC processors.

Access times as fast as 15ns are available. The IDT6198 offers a reduced power standby mode, ISB1, which is activated when CS goes HIGH. This capability significantly decreases system, while enhancing system reliability. The low-power version (L) also offers a battery backup data retention capability where the circuit typically consumes only 30μW when operating from a 2V battery.

All inputs and outputs are TTL-compatible and operate from a single 5V supply.

The IDT6198 is packaged in either a 24-pin 300 mil CERDIP, 28-pin leadless chip carrier or 24-pin J-bend small outline IC.

Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.

FUNCTIONAL BLOCK DIAGRAM

A0

VCC

GND

	DECODER	65,536-BIT
		MEMORY ARRAY

	A13
I/O0	COLUMN I/O
I/O1	INPUT
	DATA
I/O2	CONTROL
I/O3

CS
WE
OE	2987 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.

MILITARY AND COMMERCIAL TEMPERATURE RANGES	MAY 1994
©1994 Integrated Device Technology, Inc.	DSC-1010/4

6.3

1

IDT6198S/L
CMOS STATIC RAM 64K (16K x 4-BIT)	MILITARY AND COMMERCIAL TEMPERATURE RANGES

PIN CONFIGURATIONS

	A0		1			24	VCC
	A1		2			23	A13
	A2		3			22	A12
	A3		4	D24-1		21	A11
	A4		5			20	A10
				&
	A5		6	SO24-4		19	A9
	A6		7			18	NC
	A7		8			17	I/O 3
	A8		9			16	I/O 2
	CS		10			15	I/O 1
	OE		11			14	I/O 0
	GND		12			13	WE
							2987 drw 02
				DIP/SOJ
			TOP VIEW
	INDEX		A0	NC NC	VCC	NC
			3	2	28 27
	A1		4	1		26	NC
	A2		5			25	A13
	A3		6			24	A12
	A4		7			23	A11
	A5		8	L28-2		22	A10
	A6		9			21	A9
	A7		10			20	I/O3
	A8		11			19	I/O2
						18	I/O1
	CS		12
			13 14 15 16 17
			OE	GND NC	WE	I/O0	2987 drw 03

LCC

TOP VIEW

PIN DESCRIPTIONS

Name	Description
A0–A13	Address Inputs
CS	Chip Select
WE	Write Enable
OE	Output Enable
I/O0–I/O3	Data Input/Output
VCC	Power
GND	Ground

2987 tbl 01

TRUTH TABLE(1)

Mode	CS	WE	OE	I/O	Power
Standby	H	X	X	High-Z	Standby
Read	L	H	L	DATAOUT	Active
Write	L	L	X	DATAIN	Active
Read	L	H	H	High-Z	Active
NOTE:					2987 tbl 02

1. H = VIH, L = VIL, X = Don't Care

ABSOLUTE MAXIMUM RATINGS(1)

Symbol	Rating	Com’l.	Mil.	Unit
VTERM	Terminal Voltage	–0.5 to +7.0	–0.5 to +7.0	V
	with Respect
	to GND
TA	Operating	0 to +70	–55 to +125	°C
	Temperature
TBIAS	Temperature	–55 to +125	–65 to +135	°C
	Under Bias
TSTG	Storage	–55 to +125	–65 to +150	°C
	Temperature
PT	Power Dissipation	1.0	1.0	W
IOUT	DC Output	50	50	mA
	Current
NOTE:				2987 tbl 03

1.Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

CAPACITANCE (TA = +25°C, f = 1.0MHz)

Symbol	Parameter(1)	Conditions	Max.		Unit
CIN	Input Capacitance	VIN = 0V	7		pF
CI/O	I/O Capacitance	VOUT = 0V	7		pF
NOTE:				2987 tbl 04

1.This parameter is determined by device characterization, but is not production tested.

6.3

2

IDT6198S/L
CMOS STATIC RAM 64K (16K x 4-BIT)	MILITARY AND COMMERCIAL TEMPERATURE RANGES

RECOMMENDED DC OPERATING

CONDITIONS

Symbol	Parameter	Min.	Typ.	Max.	Unit
VCC	Supply Voltage	4.5	5.0	5.5	V
GND	Supply Voltage	0	0	0	V
VIH	Input High Voltage	2.2	—	6.0	V
VIL	Input Low Voltage	–0.5(1)	—	0.8	V
NOTE:				2987 tbl 05

1. VIL (min.) = –3.0V for pulse width less than 20ns, once per cycle.

RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE

Grade	Temperature	GND	VCC
Military	–55°C to +125°C	0V	5V ± 10%
Commercial	0°C to +70°C	0V	5V ± 10%

2987 tbl 06

DC ELECTRICAL CHARACTERISTICS

VCC = 5.0V ± 10%

				IDT6198S		IDT6198L
Symbol	Parameter	Test Condition		Min.	Max.	Min.	Max.	Unit
|ILI|	Input Leakage Current	VCC = Max.,	MIL.	—	10	—	5	mA
		VIN = GND to VCC	COM’L.	—	5	—	2
|ILO|	Output Leakage Current	VCC = Max., CS = VIH,	MIL.	—	10	—	5	mA
		VOUT = GND to VCC	COM’L.	—	5	—	2
VOL	Output Low Voltage	IOL = 10mA, VCC = Min.			0.5	—	0.5	V
		IOL = 8mA, VCC = Min.		—	0.4	—	0.4
VOH	Output High Voltage	IOH = –4mA, VCC = Min.		2.4	—	2.4	—	V

2987 tbl 07

DC ELECTRICAL CHARACTERISTICS(1)

(VCC = 5V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)

					6198S15		6198S20		6198S25		6198S35		6198S45		6198S55/70/85
					6198L15		6198L20		6198L25		6198L35		6198L45		6198L55/70/85
Symbol	Parameter		Power		Com’l.	Mil.	Com’l.	Mil.	Com’l.	Mil.	Com’l.	Mil.	Com’l.	Mil.	Com’l.	Mil.		Unit
ICC1	Operating Power		S		100	—	100	105	100	105	100	105	—	105	—	105		mA
	Supply Current
	CS = VIL, Outputs Open		L		75	—	70	80	70	80	70	80	—	80	—	80
	VCC = Max., f = 0(2)
ICC2	Dynamic Operating		S		135	—	130	160	125	155	125	140	—	140	—	140		mA
	Current
	CS = VIL, Outputs Open		L		125	—	115	130	105	120	105	115	—	110	—	110
	VCC = Max., f = fMAX(2)
ISB	Standby Power Supply		S		60	—	55	70	50	60	45	50	—	50	—	50		mA
	Current (TTL Level)
	CS ³ VIH, VCC = Max.,		L		45	—	40	50	35	40	30	35	—	35	—	35
	Outputs Open, f = fMAX(2)
ISB1	Full Standby Power		S		20	—	15	25	15	20	15	20	—	20	—	20		mA
	Supply Current (CMOS
	Level) CS ³ VHC,		L		1.5	—	0.5	1.5	0.5	1.5	0.5	1.5	—	1.5	—	1.5
	VCC=Max., VIN ³ VHC or
	VIN £ VLC, f = 0(2)
NOTES:																	2987 tbl 06

1.All values are maximum guaranteed values.

2.At f = fMAX address and data inputs are cycling at the maximum frequency of read cycles of 1/tRC. f = 0 means no input lines change.

6.3

3