Integrated Device Technology Inc IDT6116LA120DB, IDT6116LA120PB, IDT6116LA120SOB, IDT6116LA120TDB, IDT6116LA120TPB Datasheet

Integrated Device Technology, Inc.

MILITARY AND COMMERCIAL TEMPERATURE RANGES MARCH 1996

1996 Integrated Device Technology, Inc. 5.1 3089/1

For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.

The IDT logo is aregistered trademark of Integrated Device Technology, Inc.

FEATURES:

• High-speed access and chip select times

— Military: 20/25/35/45/55/70/90/120/150ns (max.)

— Commercial: 15/20/25/35/45ns (max.)

• Low-power consumption

• Battery backup operation

— 2V data retention voltage (LA version only)

• Produced with advanced CMOS high-performance

technology

• CMOS process virtually eliminates alpha particle

soft-error rates

• Input and output directly TTL-compatible

• Static operation: no clocks or refresh required

• Available in ceramic and plastic 24-pin DIP, 24-pin Thin

Dip and 24-pin SOIC and 24-pin SOJ

• Military product compliant to MIL-STD-833, Class B

DESCRIPTION:

The IDT6116SA/LA is a 16,384-bit high-speed static RAM

organized as 2K x 8. It is fabricated using IDT's high-perfor-

mance, high-reliability CMOS technology.

Access times as fast as 15ns are available. The circuit also

offers a reduced power standby mode. When

CS

goes HIGH,

the circuit will automatically go to, and remain in, a standby

power mode, as long as

CS

remains HIGH. This capability

provides significant system level power and cooling savings.

The low-power (LA) version also offers a battery backup data

retention capability where the circuit typically consumes only

1µW to 4µW operating off a 2V battery.

All inputs and outputs of the IDT6116SA/LA are TTL-

compatible. Fully static asynchronous circuitry is used, requir-

ing no clocks or refreshing for operation.

The IDT6116SA/LA is packaged in 24-pin 600 and 300 mil

plastic or ceramic DIP and a 24-lead gull-wing SOIC, and a 24

-lead J-bend SOJ providing high board-level packing densi-

ties.

Military grade product is manufactured in compliance to the

latest version of MIL-STD-883, Class B, making it ideally

suited to military temperature applications demanding the

highest level of performance and reliability.

FUNCTIONAL BLOCK DIAGRAM

CS

A

0

A

10

I/O 0

I/O

7

OE

WE

128 X 128

MEMORY

ARRAY

I/O CONTROL

ADDRESS

DECODER

INPUT

DATA

CIRCUIT

CONTROL

CIRCUIT

GND

3089 drw 01

VCC

1

IDT6116SA

IDT6116LA

CMOS STATIC RAM

16K (2K x 8 BIT)

5.1 2

IDT6116SA/LA

CMOS STATIC RAM 16K (2K x 8-BIT) MILITARY AND COMMERCIAL TEMPERATURE RANGES

PIN CONFIGURATIONS

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol Rating Commercial Military Unit

Terminal Voltage

V

TERM

(2)

with Respect to GND –0.5 to + 7.0 –0.5 to +7.0 V

Operating

T

A Temperature 0 to + 70 –55 to +125 °C

Temperature

T

BIAS Under Bias –55 to + 125 –65 to +135 °C

Storage

T

STG Temperature –55 to + 125 –65 to +150 °C

Power

P

T Dissipation 1.0 1.0 W

I

OUT DC Output Current 50 50 mA

NOTES: 3089 tbl 04

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-

INGS may cause permanent damage to the device. This is a stress rating

only and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this specification is not

implied. Exposure to absolute maximum rating conditions for extended

periods may affect reliability.

2. V

TERM must not exceed VCC +0.5V.

TRUTH TABLE

(1)

Mode

CS

CS

OE

OE

WE

WE

I/O

Standby H X X High-Z

Read L L H DATA

OUT

Read L H H High-Z

Write L X L DATA

IN

NOTE: 3089 tbl 02

1. H = VIH, L = VIL, X = Don't Care.

PIN DESCRIPTIONS

A0–A13 Address Inputs

I/O

0–I/O7 Data Input/Output

CS

Chip Select

WE

Write Enable

OE

Output Enable

V

CC Power

GND Ground

3089 tbl 01

CAPACITANCE (TA = +25°C, F = 1.0 MHZ)

Symbol Parameter

(1)

Conditions Max. Unit

C

IN Input Capacitance VIN = 0V 8 pF

C

I/O I/O Capacitance VOUT = 0V 8 pF

NOTE: 3089 tbl 03

1. This parameter is determined by device characterization, but is not

production tested.

DIP/SOIC/SOJ

TOP VIEW

3089 drw 02

5

6

7

8

9

10

11

12

GND

1

2

3

4

24

23

22

21

20

19

18

17

P24-2

P24-1

D24-2

D24-1

SO24-2

&

S024-4

A

5

A

4

A

3

A

2

A

1

A

0

I/O

0

I/O

1

V

CC

A

9

WE

A

10

I/O

5

I/O

4

OE

16

15

14

13

A

7

A

6

I/O

7

I/O

6

CS

A

8

I/O

2

I/O

3

5.1 3

IDT6116SA/LA

CMOS STATIC RAM 16K (2K x 8-BIT) MILITARY AND COMMERCIAL TEMPERATURE RANGES

6116SA15

(2)

6116SA20 6116SA25 6116SA35

6116LA15

(2)

6116LA20 6116LA25 6116LA35

Symbol Parameter Power Com'l. Mil. Com'l. Mil. Com'l. Mil. Com'l. Mil. Unit

I

CC1 Operating Power Supply SA 105 — 105 130 80 90 80 90 mA

Current,

CS

≤ V

IL,

Outputs Open, LA 95 — 95 120 75 85 75 85

V

CC = Max., f = 0

I

CC2 Dynamic Operating SA 150 — 130 150 120 135 100 115 mA

Current,

CS

≤ V

IL,

V

CC = Max., LA 140 — 120 140 110 125 95 105

Outputs Open, f = f

MAX

(4)

ISB Standby Power Supply SA 40 — 40 50 40 45 25 35 mA

Current (TTL Level)

CS

≥ V

IH, VCC = Max., LA 35 — 35 45 35 40 25 30

Outputs Open, f = f

MAX

(4)

ISB1 Full Standby Power SA 2 — 2 10 2 10 2 10 mA

Supply Current

(CMOS Level),

CS

≥ V

HC, LA 0.1 — 0.1 0.9 0.1 0.9 0.1 0.9

V

CC = Max., VIN ≥ VHC

or VIN ≤ VLC, f = 0

NOTES: 3089 tbl 08

1. All values are maximum guaranteed values.

2. 0°C to + 70°C temperature range only.

3. –55°C to + 125°C temperature range only.

4. f

MAX = 1/tRC, only address inputs are cycling at fMAX, f = 0 means address inputs are not changing.

DC ELECTRICAL CHARACTERISTICS

(1)

VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V

DC ELECTRICAL CHARACTERISTICS

VCC = 5.0V ± 10%

RECOMMENDED OPERATING

TEMPERATURE AND SUPPLY VOLTAGE

Ambient

Grade Temperature GND VCC

Military –55°C to +125°C 0V 5.0V ± 10%

Commercial 0°C to +70°C 0V 5.0V ± 10%

3089 tbl 05

IDT6116SA IDT6116LA

Symbol Parameter Test Conditions Min. Max. Min. Max. Unit

MIL. — 10 — 5

|I

LI| Input Leakage Current VCC = Max., VIN = GND to VCC COM'L. — 5 — 2 µA

V

CC = Max. MIL. — 10 — 5

|I

LO| Output Leakage Current

CS

= VIH, VOUT = GND to VCC COM'L. — 5 — 2 µA

V

OL Output Low Voltage IOL = 8mA, VCC = Min. — 0.4 — 0.4 V

V

OH Output High Voltage IOH = –4mA, VCC = Min. 2.4 — 2.4 — V

3089 tbl 07

RECOMMENDED DC

OPERATING CONDITIONS

Symbol Parameter Min. Typ. Max. Unit

V

CC Supply Voltage 4.5 5.0 5.5

(2)

V

G

ND Supply Ground 0 0 0 V

V

IH Input High Voltage 2.2 3.5 VCC +0.5 V

V

IL Input Low Voltage –0.5

(1)

— 0.8 V

NOTES: 3089 tbl 06

1. VIL (min.) = –3.0V for pulse width less than 20ns, once per cycle.

2. V

IN must not exceed VCC +0.5V.