Integrated Device Technology Inc IDT54FCT151ATD, IDT54FCT151ATDB, IDT54FCT151ATE, IDT54FCT151CTE, IDT54FCT151CTEB Datasheet

FAST CMOS	IDT54/74FCT151T/AT/CT
8-INPUT MULTIPLEXER

Integrated Device Technology, Inc.

FEATURES:

•Std., A, and C speed grades

•Low input and output leakage ≤1μA (max.)

•Extended commercial range of –40°C to +85°C

•CMOS power levels

•True TTL input and output compatibility

–VOH = 3.3V (typ.)

–VOL = 0.3V (typ.)

•High drive outputs (-15mA IOH, 48mA IOL)

•Power off disable outputs permit “live insertion”

•Meets or exceeds JEDEC standard 18 specifications

•Product available in Radiation Tolerant and Radiation Enhanced versions

•Military product compliant to MIL-STD-883, Class B and DESC listed (dual marked)

•Available in DIP, SOIC, CERPACK and LCC packages

DESCRIPTION:

The IDT54/74FCT151T/AT/CT are high-speed 8-input multiplexers built using an advanced dual metal CMOS technology. They select one bit of data from up to eight sources under the control of three select inputs. Both assertion and negation outputs are provided.

The IDT54/74FCT151T/AT/CT has a common Active-LOW enable (E) input. When E is LOW, data from one of eight inputs is routed to the complementary outputs according to the 3-bit code applied to the Select (S0-S2) inputs. A common application of the ‘FCT151 is data routing from one of eight sources.

FUNCTIONAL BLOCK DIAGRAM

I7

I6

I5

Z

I4

Z

I3

I2

I1

I0

S2 S1 S0	E
		2635 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES		SEPTEMBER 1996
©1997 Integrated Device Technology, Inc.	6.5	DSC-2635/5
		1

IDT54/74FCT151T/AT/CT
FAST CMOS 8-INPUT MULTIPLEXER	MILITARY AND COMMERCIAL TEMPERATURE RANGES

PIN CONFIGURATIONS

I3		1		16		VCC
I2		2		15		I4
I1		3	P16-1	14		I5
I0		4	D16-1	13		I6
Z		5	SO16-1	12		I7
Z		6	&	11		S0
			E16-1
E		7		10		S1
GND		8		9		S2
	DIP/SOIC/CERPACK
			TOP VIEW			2635 drw 02

ABSOLUTE MAXIMUM RATINGS(1)

Symbol	Description	Max.	Unit
VTERM(2)	Terminal Voltage with Respect to	–0.5 to +7.0	V
	GND
VTERM(3)	Terminal Voltage with Respect to	–0.5 to	V
	GND	VCC +0.5
TSTG	Storage Temperature	–65 to +150	°C
IOUT	DC Output Current	–60 to +120	mA
NOTES:			2635 lnk 01

1.Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. No terminal voltage may exceed VCC by +0.5V unless otherwise noted.

2.Input and VCC terminals only.

3.Outputs and I/O terminals only.

CAPACITANCE (TA = +25°C, f = 1.0MHz)

Symbol	Parameter(1)	Conditions	Typ.	Max.	Unit
CIN	Input	VIN = 0V	6	10	pF
	Capacitance
COUT	Output	VOUT = 0V	8	12	pF
	Capacitance
NOTE:				2635 lnk 02

1. This parameter is measured at characterization but not tested.

INDEX		I3 NC	VCC	I4
	I2
	3	2	20 19
I1	4	1		18	I5
I0	5			17	I6
NC	6	L20-2		16	NC
Z	7			15	I7
z	8			14	S0
	9	10 11 12 13
	E	GND NC	S2	S1	2635 drw 03
		LCC

TOP VIEW

PIN DESCRIPTION

Pin Names	Description
I0 - I7	Data Inputs
S0 - S2	Selects Inputs
E	Enable Input (Active LOW)
Z	Data Output
Z	Inverted Data Output
	2635 tbl 03

FUNCTION TABLE(1)

		Inputs			Outputs
S2	S1	S0	E	Z	Z
X	X	X	H	L	H
L	L	L	L	I0	I0
L	L	H	L	I1	I1
L	H	L	L	I2	I2
L	H	H	L	I3	I3
H	L	L	L	I4	I4
H	L	H	L	I5	I5
H	H	L	L	I6	I6
H	H	H	L	I7	I7
NOTE:					2635 tbl 04

1.H = HIGH Voltage Level, L = LOW Voltage Level, X = Don’t care, Z = High Impedance.

6.5

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