Integrated Device Technology Inc IDT54827CL, IDT54827CLB, IDT54827CP, IDT54827CPB, IDT54827CSO Datasheet

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HIGH-PERFORMANCE

IDT54/74FCT827A

CMOS BUFFERS

IDT54/74FCT827B

 

IDT54/74FCT827C

Integrated Device Technology, Inc.

FEATURES:

Faster than AMD’s Am29827 series

Equivalent to AMD’s Am29827 bipolar buffers in pinout/ function, speed and output drive over full temperature and voltage supply extremes

IDT54/74FCT827A equivalent to FAST

IDT54/74FCT827B 35% faster than FAST

IDT54/74FCT827C 45% faster than FAST

IOL = 48mA (commercial), and 32mA (military)

Clamp diodes on all inputs for ringing suppression

CMOS power levels (1mW typ. static)

TTL input and output level compatible

CMOS output level compatible

Substantially lower input current levels than AMD’s bipolar Am29800 series (5μA max.)

Product available in Radiation Tolerant and Radiation Enhanced versions

Military product compliant to MIL-STD-883, Class B

DESCRIPTION:

The IDT54/74FCT800 series is built using an advanced dual metal CMOS technology.

The IDT54/74FCT827A/B/C 10-bit bus drivers provide high-performance bus interface buffering for wide data/ address paths or buses carrying parity. The 10-bit buffers have NAND-ed output enables for maximum control flexibility.

All of the IDT54/74FCT800 high-performance interface family are designed for high-capacitance load drive capability, while providing low-capacitance bus loading at both inputs and outputs. All inputs have clamp diodes and all outputs are designed for low-capacitance bus loading in high-impedance state.

FUNCTIONAL BLOCK DIAGRAM

Y0

Y1

Y2

Y3

Y4

Y5

Y6

Y7

Y8

Y9

D0

D1

D2

D3

D4

D5

D6

D7

D8

D9

OE1 OE2

 

 

 

 

 

 

 

 

 

 

2609 drw 01

PRODUCT SELECTOR GUIDE

 

 

 

 

 

 

 

 

 

 

 

 

10-Bit Buffer

 

 

 

 

 

 

 

 

 

Non-inverting

 

IDT54/74FCT827A/B/C

 

 

 

 

 

 

 

 

 

 

 

 

2609

tbl 01

 

 

 

 

 

 

 

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

 

 

 

 

 

 

 

 

 

FAST is a trademark of National Semiconductor Co.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MILITARY AND COMMERCIAL TEMPERATURE RANGES

 

 

 

 

MAY 1992

 

 

 

 

 

 

 

 

 

 

 

 

©1992 Integrated Device Technology, Inc.

 

 

 

7.20

 

 

 

 

DSC-4612/2

1

Integrated Device Technology Inc IDT54827CL, IDT54827CLB, IDT54827CP, IDT54827CPB, IDT54827CSO Datasheet

IDT54/74FCT827A/B/C

 

HIGH-PERFORMANCE CMOS BUFFERS

MILITARY AND COMMERCIAL TEMPERATURE RANGES

PIN CONFIGURATIONS

OE1

 

1

 

24

 

VCC

D0

 

2

 

23

 

Y0

 

 

 

D1

 

3

 

22

 

Y1

 

 

 

D2

 

4

P24-1

21

 

Y2

 

 

D3

 

5

D24-1

20

 

Y3

 

 

D4

 

6

E24-1

19

 

Y4

 

 

D5

 

7

&

18

 

Y5

 

 

D6

 

8

SO24-2 17

 

Y6

 

 

D7

 

9

 

16

 

Y7

 

 

 

D8

 

10

 

15

 

Y8

 

 

 

D9

 

11

 

14

 

Y9

 

 

 

GND

 

12

 

13

 

OE2

 

 

 

 

 

 

 

2609 drw 02

 

 

 

 

 

 

 

LOGIC SYMBOL

 

INDEX

D1 D0

OE1

NC VCC Y0 Y1

 

 

 

 

 

 

 

10

 

10

 

 

 

 

 

 

 

 

 

4

3

2

1 28 27 26

 

D0-9

Y0-9

D2

Y2

 

 

 

 

5

 

 

 

25

 

 

 

 

D3

6

 

 

 

24

Y3

 

 

 

 

D4

7

 

 

 

23

Y4

 

 

 

 

NC

8

 

L28-1

22

NC

 

 

 

 

D5

9

 

 

 

21

Y5

 

 

 

 

D6

10

 

 

 

20

Y6

OE1

 

D7

11

 

 

 

19

Y7

OE2

 

 

 

 

1213 14 15 16 17 18

 

 

 

 

 

D8

D9

GND NC OE2

Y9 Y8

 

 

 

 

2609 drw 04

 

2609 drw 03

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DIP/CERPACK/SOIC

LCC

TOP VIEW

TOP VIEW

PIN DESCRIPTION

Name

I/O

Description

OEI

I

When both are LOW, the outputs are

 

 

enabled. When either one or both are

 

 

HIGH, the outputs are High Z.

DI

I

10-bit data input.

YI

O

10-bit data output.

 

 

2609 tbl 02

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

Rating

Commercial

Military

Unit

VTERM(2)

Terminal Voltage

–0.5 to +7.0

–0.5 to +7.0

V

 

with Respect to

 

 

 

 

GND

 

 

 

VTERM(3)

Terminal Voltage

–0.5 to VCC

–0.5 to VCC

V

 

with Respect to

 

 

 

 

GND

 

 

 

TA

Operating

0 to +70

–55 to +125

°C

 

Temperature

 

 

 

TBIAS

Temperature

–55 to +125

–65 to +135

°C

 

Under Bias

 

 

 

TSTG

Storage

–55 to +125

–65 to +150

°C

 

Temperature

 

 

 

PT

Power Dissipation

0.5

0.5

W

IOUT

DC Output

120

120

mA

 

Current

 

 

 

NOTES:

 

 

2609 tbl 04

FUNCTION TABLE(1)

 

Inputs

 

Output

 

OE1

OE2

DI

YI

Function

L

L

L

L

Transparent

L

L

H

H

 

H

X

X

Z

Three-State

X

H

X

Z

 

NOTE:

 

 

 

2609 tbl 03

1. H = HIGH, L = LOW, X = Don’t Care, Z = High Impedance

CAPACITANCE (TA = +25°C, f = 1.0MHz)

Symbol

Parameter(1)

Conditions

Typ.

Max.

Unit

CIN

Input

VIN = 0V

6

10

pF

 

Capacitance

 

 

 

 

COUT

Output

VOUT = 0V

8

12

pF

 

Capacitance

 

 

 

 

NOTE:

 

 

 

2609 tbl 05

1. This parameter is measured at characterization but not tested.

1.Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this

specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. No terminal voltage may exceed VCC by +0.5V unless otherwise noted.

2.Input and VCC terminals only.

3.Outputs and I/O terminals only.

7.20

2

IDT54/74FCT827A/B/C

 

HIGH-PERFORMANCE CMOS BUFFERS

MILITARY AND COMMERCIAL TEMPERATURE RANGES

DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE

Following Conditions Apply Unless Otherwise Specified: VLC = 0.2V; VHC = VCC – 0.2V

Commercial: TA = 0°C to +70°C, VCC = 5.0V ± 5%; Military: TA = –55°C to +125°C, VCC = 5.0V ± 10%

Symbol

Parameter

Test Conditions(1)

Min.

Typ.(2)

Max.

Unit

VIH

Input HIGH Level

Guaranteed Logic HIGH Level

2.0

V

VIL

Input LOW Level

Guaranteed Logic LOW Level

0.8

V

II H

Input HIGH Current

VCC = Max.

VI = VCC

5

μA

 

 

 

VI = 2.7V

5(4)

 

II L

Input LOW Current

 

VI = 0.5V

–5(4)

 

 

 

 

VI = GND

–5

 

IOZH

Off State (High Impedance)

VCC = Max.

VO = VCC

10

μA

 

Output Current

 

VO = 2.7V

10(4)

 

IOZL

 

 

VO = 0.5V

–10(4)

 

 

 

 

VO = GND

–10

 

VIK

Clamp Diode Voltage

VCC = Min., IN = –18mA

 

–0.7

–1.2

V

IOS

Short Circuit Current

VCC = Max.(3), VO = GND

 

–75

–120

mA

VOH

Output HIGH Voltage

VCC = 3V, VIN = VLC or VHC, IOH = –32μA

VHC

VCC

V

 

 

VCC = Min.

IOH = –300μA

VHC

VCC

 

 

 

VIN = VIH or VIL

IOH = –15mA MIL.

2.4

4.3

 

 

 

 

IOH = –24mA COM'L.

2.4

4.3

 

VOL

Output LOW Voltage

VCC = 3V, VIN = VLC or VHC, IOL = 300μA

GND

VLC

V

 

 

VCC = Min.

IOL = 300μA

GND

VLC(4)

 

 

 

VIN = VIH or VIL

IOL = 32mA MIL.

0.3

0.5

 

 

 

 

IOL = 48mA COM'L.

0.3

0.5

 

NOTES:

 

 

 

 

 

 

2609 tbl 06

1.For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.

2.Typical values are at VCC = 5.0V, +25°C ambient and maximum loading.

3.Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.

4.This parameter is guaranteed but not tested.

7.20

3

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