Integrated Device Technology Inc IDT6168LA15D, IDT6168LA15DB, IDT6168LA15P, IDT6168LA15PB, IDT6168LA15SO Datasheet

CMOS STATIC RAM	IDT6168SA
16K (4K x 4-BIT)	IDT6168LA

Integrated Device Technology, Inc.

FEATURES:

•High-speed (equal access and cycle time)

—Military: 15/20/25/35/45ns (max.)

—Commercial: 15/20/25/35ns (max.)

•Low power consumption

•Battery backup operation—2V data retention voltage (IDT6168LA only)

•Available in high-density 20-pin ceramic or plastic DIP, 20pin SOIC.

•Produced with advanced CMOS high-performance technology

•CMOS process virtually eliminates alpha particle soft-error rates

•Bidirectional data input and output

•Military product compliant to MIL-STD-883, Class B

DESCRIPTION:

The IDT6168 is a 16,384-bit high-speed static RAM organized as 4K x 4. It is fabricated using lDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques,

provides a cost-effective approach for high-speed memory applications.

Access times as fast 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby mode as long as CS remains HIGH. This capability provides significant system-level power and cooling savings. The lowpower (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW operating off a 2V battery. All inputs and outputs of the IDT6168 are TTL-compatible and operate from a single 5V supply.

The IDT6168 is packaged in either a space saving 20-pin, 300-mil ceramic or plastic DIP, 20-pin SOIC providing high board-level packing densities.

Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.

FUNCTIONAL BLOCK DIAGRAM

A0

ADDRESS

DECODER

A11

I/O0
I/O1	INPUT
	DATA
I/O2	CONTROL
I/O3

CS

WE

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

VCC

GND

16,384-BIT

MEMORY ARRAY

I/O CONTROL

3090 drw 01

MILITARY AND COMMERCIAL TEMPERATURE RANGE

©1996 Integrated Device Technology, Inc.

For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391. 5.3

MAY 1996

3090/2

1

IDT6168SA/LA
CMOS STATIC RAM 16K (4K x 4-BIT)	MILITARY AND COMMERCIAL TEMPERATURE RANGES

PIN CONFIGURATIONS

	A0	1		20	VCC
	A1	2		19	A11
	A2	3	P20-1,	18	A10
	A3	4		17	A9
			D20-1,
	A4	5		16	A8
			&
	A5	6	SO20-2	15	I/O3
	A6	7		14	I/O2
	A7	8		13	I/O1
	CS	9		12	I/O0
	GND	10		11	WE

3090 drw 02

DIP/SOJ

TOP VIEW

PIN DESCRIPTIONS

Name	Description
A0–A11	Address Inputs
CS	Chip Select
WE	Write Enable
I/O0-3	Data Input/Output
VCC	Power
GND	Ground

3090 tbl 01

CAPACITANCE (TA = +25°C, F = 1.0MHZ)

	Symbol	Parameter(1)	Conditions	Max.	Unit
	CIN	Input Capacitance	VIN = 0V	7	pF
	CI/O	I/O Capacitance	VOUT = 0V	7	pF
	NOTE:				3090 tbl 02

1.This parameter is determined by device characterization, but is not production tested.

TRUTH TABLE(1)

	Mode	CS	WE	Output	Power
	Standby	H	X	High-Z	Standby
	Read	L	H	DOUT	Active
	Write	L	L	DIN	Active
	NOTE:				3090 tbl 03

1. H = VIH, L = VIL, X = Don't Care

ABSOLUTE MAXIMUM RATINGS(1)

Symbol	Rating	Com’l.	Mil.		Unit
VTERM	Terminal Voltage	–0.5 to +7.0	–0.5 to +7.0		V
	with Respect
	to GND
TA	Operating	0 to +70	–55 to +125		°C
	Temperature
TBIAS	Temperature	–55 to +125	–65 to +135		°C
	Under Bias
TSTG	Storage	–55 to +125	–65 to +150		°C
	Temperature
PT	Power Dissipation	1.0	1.0		W
IOUT	DC Output	50	50		mA
	Current
NOTE:				3090 tbl 04

1.Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

RECOMMENDED DC OPERATING

CONDITIONS

Symbol	Parameter	Min.	Typ.	Max.		Unit
VCC	Supply Voltage	4.5	5.0	5.5		V
GND	Supply Voltage	0	0	0		V
VIH	Input High Voltage	2.2	—	6.0		V
VIL	Input Low Voltage	–0.5(1)	—	0.8		V
NOTE:					3090 tbl 05

1. VIL (min.) = –3.0V for pulse width less than 20ns, once per cycle.

RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE

Grade	Temperature	GND	VCC
Military	–55°C to +125°C	0V	5V ± 10%
Commercial	0°C to +70°C	0V	5V ± 10%

3090 tbl 06

5.3

2

IDT6168SA/LA
CMOS STATIC RAM 16K (4K x 4-BIT)	MILITARY AND COMMERCIAL TEMPERATURE RANGES

DC ELECTRICAL CHARACTERISTICS(1)

(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)

						6168SA15		6168SA20
								6168LA20
Symbol	Parameter				Power	Com’l.	Mil.	Com’l.	Mil.	Unit
ICC1	Operating Power Supply Current				SA	110	120	90	100	mA
	CS £ VIL, Outputs Open,
	VCC = Max., f = 0(2)				LA	—	—	70	80
ICC2	Dynamic Operating Current				SA	145	165	120	120	mA
	CS £ VIL, Outputs Open,
	VCC = Max., f = fMAX(2)				LA	—	—	100	110
ISB	Standby Power Supply Current				SA	55	60	45	45	mA
	(TTL Level)
	CS ³ VIH, VCC = Max.,				LA	—	—	30	35
	Outputs Open, f = fMAX(2)
ISB1	Full Standby Power Supply Current				SA	20	20	20	20	mA
	(CMOS Level)
	CS ³ VHC, VCC = Max.,				LA	—	—	0.5	5
	VIN ³ VHC or VIN £ VLC, f = 0(2)
										3090 tbl 07
DC ELECTRICAL CHARACTERISTICS (CONTINUED)(1)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
			6168SA25			6168SA35		6168SA45
			6168LA25			6168LA35		6168LA45
Symbol	Parameter	Power	Com’l.		Mil.	Com’l.	Mil.	Com’l.	Mil.	Unit
ICC1	Operating Power Supply Current	SA	90		100	90	—	—	100	mA
	CS £ VIL, Outputs Open,
	VCC = Max., f = 0(2)	LA	70		80	70	—	—	80
ICC2	Dynamic Operating Current	SA	110		120	100	—	—	110	mA
	CS £ VIL, Outputs Open,
	VCC = Max., f = fMAX(2)	LA	90		100	80	—	—	80
ISB	Standby Power Supply Current	SA	35		45	30	—	—	35	mA
	(TTL Level)
	CS ³ VIH, VCC = Max.,	LA	25		30	20	—	—	25
	Outputs Open, f = fMAX(2)
ISB1	Full Standby Power Supply Current	SA	3		10	3	—	—	10	mA
	(CMOS Level)
	CS ³ VHC, VCC = Max.,	LA	0.5		0.3	0.5	—	—	0.3
	VIN ³ VHC or VIN £ VLC, f = 0(2)
NOTES:										3090 tbl 08

1.All values are maximum guaranteed values.

2.fMAX = 1/tRC, only address inputs are cycling at fMAX. f = 0 means no address inputs are changing.

DC ELECTRICAL CHARACTERISTICS VCC = 5.0V ± 10%

				IDT6168SA		IDT6168LA
Symbol	Parameter	Test Condition		Min.	Max.	Min.	Max.		Unit
|ILI|	Input Leakage Current	VCC = Max.,	MIL	—	10	—	5		mA
		VIN = GND to VCC	COM’L	—	2	—	2
|ILO|	Output Leakage Current	VCC = Max., CS = VIH,	MIL	—	10	—	5		mA
		VOUT = GND to VCC	COM’L	—	2	—	2
VOL	Output LOW Voltage	IOL = 10mA, VCC = Min.		—	0.5	—	0.5		V
		IOL = 8mA, VCC = Min.		—	0.4	—	0.4
VOH	Output HIGH Voltage	IOH = –4mA, VCC = Min.		2.4	—	2.4	—		V

3090 tbl 09

5.3

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