White Electronic Designs WS128K32-35G2TIE, WS128K32-35G2TCEA, WS128K32-35G2TCE, WS128K32-55G2TMEA, WS128K32-55G2TIEA Datasheet
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WS128K32-XG2TXE
HI-RELIABILITY PRODUCT
128Kx32 SRAM MULTICHIP PACKAGE, RADIATION TOLERANT ADVANCED*
FEATURES
■Access Times of 35, 45, 55ns
■Packaging
•68 lead, 22.4mm CQFP (G2T), 4.57mm (0.180"), (Package 509)
■Organized as 128Kx32; User Configurable as 256Kx16 or 512Kx8
■Low Power Data Retention
■Commercial, Industrial and Military Temperature Ranges
■5 Volt Power Supply
■Low Power CMOS
■TTL Compatible Inputs and Outputs
■Built in Decoupling Caps and Multiple Ground Pins for Low Noise Operation
■Weight:
WS128K32-XG2TXE - 8 grams typical
■Radiation tolerant with epitaxial layer on die.
■6T memory cells provide excellent protection against soft errors
*This data sheet describes a product that may or may not be under development and is subject to change or cancellation without notice.
FIG. 1 PIN CONFIGURATION FOR WS128K32-XG2TXE
TOP VIEW
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NC |
A0 |
A1 |
A2 |
A3 |
A4 |
A5 |
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CS3 |
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GND |
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CS4 |
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WE1 |
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A6 |
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A7 |
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A8 |
A9 |
A10 |
VCC |
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9 |
8 |
7 |
6 |
5 |
4 |
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2 |
1 |
68 67 66 65 64 63 62 61 |
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I/O0 |
10 |
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60 |
I/O16 |
I/O1 |
11 |
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59 |
I/O17 |
I/O2 |
12 |
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58 |
I/O18 |
I/O3 |
13 |
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57 |
I/O19 |
I/O4 |
14 |
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56 |
I/O20 |
I/O5 |
15 |
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55 |
I/O21 |
I/O6 |
16 |
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54 |
I/O22 |
I/O7 |
17 |
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53 |
I/O23 |
GND |
18 |
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52 |
GND |
I/O8 |
19 |
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51 |
I/O24 |
I/O9 |
20 |
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50 |
I/O25 |
I/O10 |
21 |
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49 |
I/O26 |
I/O11 |
22 |
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48 |
I/O27 |
I/O12 |
23 |
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47 |
I/O28 |
I/O13 |
24 |
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46 |
I/O29 |
I/O14 |
25 |
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45 |
I/O30 |
I/O15 |
26 |
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44 |
I/O31 |
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27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 |
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VCC |
A11 |
A12 |
A13 |
A14 |
A15 |
A16 |
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CS1 |
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OE |
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CS2 |
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NC |
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WE2 |
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WE3 |
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WE4 |
NC |
NC |
NC |
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0.940"
The WEDC 68 lead G2T CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2T has the TCE and lead inspection advantage of the CQFP form.
OE
A 0 - 1 6
PIN DESCRIPTION
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I/O0-31 |
Data Inputs/Outputs |
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A0-16 |
Address Inputs |
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Write Enables |
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WE |
1-4 |
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Chip Selects |
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CS |
1-4 |
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Output Enable |
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OE |
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VCC |
Power Supply |
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GND |
Ground |
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NC |
Not Connected |
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BLOCK DIAGRAM
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WE1CS1 |
WE2CS2 |
WE3CS3 |
WE4CS4 |
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128K x 8 |
128K x 8 |
128K x 8 |
128K x 8 |
8 |
8 |
8 |
8 |
I/O 0 - 7 |
I/O 8 - 15 |
I/O 16 - 23 |
I/O 24 - 31 |
December 2000 Rev. 0 |
1 |
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com |
WS128K32-XG2TXE
ABSOLUTE MAXIMUM RATINGS
Parameter |
Symbol |
Min |
Max |
Unit |
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Operating Temperature |
TA |
-55 |
+125 |
°C |
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Storage Temperature |
TSTG |
-65 |
+150 |
°C |
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Signal Voltage Relative to GND |
VG |
-0.5 |
Vcc+0.5 |
V |
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Junction Temperature |
TJ |
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150 |
°C |
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Supply Voltage |
VCC |
-0.5 |
7.0 |
V |
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RECOMMENDED OPERATING CONDITIONS
Parameter |
Symbol |
Min |
Max |
Unit |
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Supply Voltage |
VCC |
4.5 |
5.5 |
V |
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Input High Voltage |
VIH |
2.2 |
VCC + 0.3 |
V |
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Input Low Voltage |
VIL |
-0.3 |
+0.8 |
V |
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Operating Temp. (Mil.) |
TA |
-55 |
+125 |
°C |
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TRUTH TABLE
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CS |
OE |
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WE |
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Mode |
Data I/O |
Power |
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H |
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X |
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X |
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Standby |
High Z |
Standby |
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L |
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L |
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H |
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Read |
Data Out |
Active |
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L |
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X |
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L |
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Write |
Data In |
Active |
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L |
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H |
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H |
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Out Disable |
High Z |
Active |
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CAPACITANCE
(TA = +25°C)
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Parameter |
Symbol |
Conditions |
Max |
Unit |
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capacitance |
COE |
VIN = 0 V, f = 1.0 MHz |
50 |
pF |
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OE |
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1-4 capacitance |
CWE |
VIN = 0 V, f = 1.0 MHz |
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pF |
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WE |
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CQFP G2T |
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20 |
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CS1-4 capacitance |
CCS |
VIN = 0 V, f = 1.0 MHz |
20 |
pF |
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Data I/O capacitance |
CI/O |
VI/O = 0 V, f = 1.0 MHz |
20 |
pF |
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Address input capacitance |
CAD |
VIN = 0 V, f = 1.0 MHz |
50 |
pF |
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This parameter is guaranteed by design but not tested.
RADIATION CHARACTERISTICS
Total Dose (TM1019.5) |
Latch-up |
SEU LET |
Cross |
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Functional |
Parametric |
25°C |
Threshold |
Section |
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VCC Max |
(VCC MIN) |
/BIT |
(Krads) |
(Krads) |
Typical Iccsb (mA) |
(MeV/mg/cm2) |
(MeV/mg/cm2) |
(E-6 cm2) |
30 |
30 |
1.2 |
>100 |
2 |
0.2 |
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DC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)
Parameter |
Sym |
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Conditions |
Min |
Max |
Units |
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Input Leakage Current |
ILI |
VCC = 5.5, VIN = GND to VCC |
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10 |
A |
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Output Leakage Current |
ILO |
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= VIH, |
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= VIH, VOUT = GND to VCC |
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10 |
A |
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CS |
OE |
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Operating Supply Current |
ICC |
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= VIL, |
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= VIH, f = 5MHz, Vcc = 5.5 |
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520 |
mA |
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CS |
OE |
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Standby Current |
ISB |
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= VIH, |
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= VIH, f = 5MHz, Vcc = 5.5 |
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8 |
mA |
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CS |
OE |
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Output Low Voltage |
VOL |
IOL = 8mA, VCC = 4.5 |
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0.4 |
V |
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Output High Voltage |
VOH |
IOH = -4OmA, VCC = 4.5 |
2.4 |
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V |
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NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
DATA RETENTION CHARACTERISTICS
(TA = -55°C to +125°C)
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Characteristic |
Sym |
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Conditions |
Min |
Max |
Units |
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Data Retention Voltage |
VCC |
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VCC = 2.0V |
2 |
- |
V |
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Data Retention Quiescent Current |
ICCDR |
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CS ≥ VCC -0.2V |
- |
1 |
mA |
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Chip Disable to Data Retention Time (1) |
TCDR |
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VIN ≥ VCC -0.2V |
0 |
- |
ns |
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Operation Recovery Time (1) |
TR |
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or VIN ≤ 0.2V |
TRC |
- |
ns |
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NOTE: Parameter guaranteed, but not tested. |
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White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com |
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