White Electronic Designs WSF128K16-37G1UIA, WSF128K16-37G1UI, WSF128K16-37G1UCA, WSF128K16-37G1UC, WSF128K16-72HIA Datasheet

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νAccess Times of 35ns (SRAM) and 70ns (FLASH)

νAccess Times of 70ns (SRAM) and 120ns (FLASH)

νPackaging

66-pin, PGA Type, 1.075 inch square HIP, Hermetic Ceramic HIP (Package 400)

66-pin, PGA Type, 1.185 inch square HIP, Hermetic Ceramic HIP (Package 401)

68 lead, Hermetic CQFP (G1U), 22.4mm (0.880 inch) square (Package 519). Designed to fit JEDEC 68 lead 0.990” CQFJ footprint (Fig. 2)

ν128Kx16 SRAM

ν128Kx16 5V FLASH

νOrganized as 128Kx16 of SRAM and 128Kx16 of Flash Memory with separate Data Buses

νBoth blocks of memory are User Configurable as 256Kx8

νLow Power CMOS

νCommercial, Industrial and Military Temperature Ranges

νTTL Compatible Inputs and Outputs

νBuilt-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation

νWeight

WSF128K16-XHX - 13 grams typical

WSF128K16-H1X - 13 grams typical

WSF128K16-XG1UX - 5 grams typical

ν10,000 Erase/Program Cycles

νSector Architecture

8 equal size sectors of 16K bytes each

Any combination of sectors can be concurrently erased.

Also supports full chip erase

ν5 Volt Programming; 5V ± 10% Supply

νEmbedded Erase and Program Algorithms

νHardware Write Protection

νPage Program Operation and Internal Program Control Time.

Note: For programming information refer to Flash Programming 1M5 Application Note.

FIG.1

 

 

 

FD0-15

FlashDataInputs/Outputs

 

SD0-15

SRAMDataInputs/Outputs

 

A0-16

AddressInputs

 

SWE1-2

SRAM Write Enable

 

SCS1-2

SRAM Chip Selects

 

OE

OutputEnable

 

VCC

Power Supply

 

GND

Ground

 

NC

Not Connected

 

FWE1-2

Flash Write Enable

 

FCS1-2

Flash Chip Select

 

 

May 2001 Rev. 5

 

White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

FIG. 2

The WEDC 68 lead G1U CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G1U has the TCE and lead inspection advantage of the CQFP form.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FD0-15

FlashDataInputs/Outputs

 

 

 

 

 

 

 

 

 

SD0-15

SRAMDataInputs/Outputs

 

 

A0-16

AddressInputs

 

 

 

 

 

 

SWE1-2

SRAM Write Enable

 

 

 

 

 

 

SRAM Chip Selects

 

 

SCS1-2

 

 

 

 

OutputEnable

 

 

 

OE

 

 

 

VCC

Power Supply

 

 

GND

Ground

 

 

NC

Not Connected

 

 

Flash Write Enable

 

 

FWE

1-2

 

 

 

 

Flash Chip Select

 

 

FCS1-2

White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520

 

 

 

 

!

#

!

 

 

 

 

 

Operating Temperature

T A

-55

+125

°C

StorageTemperature

TSTG

-65

+150

°C

Signal Voltage Relative to GND

VG

-0.5

7.0

V

Junction Temperature

TJ

 

 

150

°C

SupplyVoltage

VCC

-0.5

7.0

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Flash Data Retention

 

 

 

10 years

 

Flash Endurance (write/erase cycles)

 

 

10,000

 

 

 

 

 

 

 

NOTES:

1. Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability.

!

 

 

!

#

!

 

 

 

 

 

SupplyVoltage

VCC

4.5

5.5

V

 

 

 

 

 

Input High Voltage

VIH

2.2

VCC + 0.3

V

Input Low Voltage

VIL

-0.5

+0.8

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

$%

$&

 

 

H

 

X

 

X

 

Standby

 

High Z

Standby

 

 

L

 

L

 

H

 

Read

 

 

Data Out

Active

 

 

L

 

H

 

H

 

Read

 

 

High Z

Active

 

 

L

 

X

 

L

 

Write

 

 

Data In

Active

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

"

 

 

 

 

 

 

 

 

 

 

 

! !

#

!

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

COE

 

VIN = 0V, f = 1.0MHz

50

pF

 

OE

Capacitance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

F/S

WE

1-2 Capacitance

 

CWE

 

VIN = 0V, f = 1.0MHz

20

pF

 

 

 

 

 

 

 

 

 

F/S

CS

1-2 Capacitance

 

CCS

 

VIN = 0V, f = 1.0MHz

20

pF

 

SD0-15/FD0-15 Capacitance

 

CI/O

 

VIN = 0V, f = 1.0MHz

20

pF

 

A0 - A16 Capacitance

 

 

 

CAD

 

VIN = 0V, f = 1.0MHz

50

pF

This parameter is guaranteed by design but not tested.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

! ! "

!

#

!

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Leakage Current

ILI

 

VCC = 5.5, VIN = GND to VCC

 

10

µA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OutputLeakageCurrent

IL O

 

 

 

 

= VIH,

 

= VIH, VOUT = GND to VCC

 

10

µA

 

SCS

 

OE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SRAM Operating Supply Current x 16 Mode

ICCx16

 

 

 

 

 

 

 

 

= VIL,

 

 

 

 

 

 

=

 

 

 

= VIH, f = 5MHz, VCC = 5.5

 

360

mA

 

 

 

SCS

OE

FCS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Standby Current

ISB

 

 

FCS

=

SCS

= VIH,

OE

= VIH, f = 5MHz, VCC = 5.5

 

40

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SRAM Output Low Voltage

VOL

 

IOL = 2.1mA, VCC = 4.5

 

0.4

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SRAM Output High Voltage

VOH

 

IOH = -1.0mA, VCC = 4.5

2.4

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Flash VCC Active Current for Read (1)

ICC1

 

 

 

 

 

= VIL,

 

 

=

 

= VIH

 

100

mA

 

FCS

OE

SCS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Flash VCC Active Current for Program or

ICC2

 

FCS

= VIL,

 

OE

=

SCS

= VIH

 

130

mA

Erase (2)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Flash Output Low Voltage

VOL

 

IOL = 8.0mA, VCC = 4.5

 

0.45

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Flash Output High Voltage

VOH1

 

IOH = -2.5 mA, VCC = 4.5

0.85 x VCC

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Flash Output High Voltage

VOH2

 

IOH = -100 µA, VCC = 4.5

VCC -0.4

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Flash Low VCC Lock Out Voltage

VLKO

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.2

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NOTES:

1.The ICC current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz). The frequency component typically is less than 2 mA/MHz, with OE at VIH.

2.ICC active while Embedded Algorithm (program or erase) is in progress.

3.DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V

White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

 

 

 

()*

 

 

(+,

 

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$ -

 

! #

! #

 

Read Cycle Time

tRC

35

 

 

 

70

 

 

 

ns

Address Access Time

tAA

 

35

 

70

ns

OutputHoldfromAddressChange

tOH

0

 

 

 

3

 

 

 

ns

Chip Select Access Time

tACS

 

35

 

70

ns

Output Enable to Output Valid

tOE

 

20

 

35

ns

Chip Select to Output in Low Z

tCLZ1

3

 

 

 

3

 

 

 

ns

Output Enable to Output in Low Z

tOLZ1

0

 

 

 

0

 

 

 

ns

Chip Disable to Output in High Z

tCHZ1

 

20

 

25

ns

OutputDisabletoOutputinHighZ

tOHZ1

 

20

 

25

ns

1. This parameter is guaranteed by design but not tested.

 

 

 

()*

 

 

(+,

 

!

!$ -

 

! #

 

 

 

 

 

Write Cycle Time

tWC

35

 

 

 

70

 

 

 

ns

Chip Select to End of Write

tCW

25

 

 

 

60

 

 

 

ns

Address Valid to End of Write

tAW

25

 

 

 

60

 

 

 

ns

Data Valid to End of Write

tDW

20

 

 

 

30

 

 

 

ns

Write Pulse Width

tWP

25

 

 

 

50

 

 

 

ns

Address Setup Time

tAS

0

 

 

 

5

 

 

 

ns

Address Hold Time

tAH

0

 

 

 

5

 

 

 

ns

Output Active from End of Write

tOW1

4

 

 

 

5

 

 

 

ns

Write Enable to Output in High Z

tWHZ1

 

20

 

25

ns

Data Hold from Write Time

tDH

0

 

 

 

0

 

 

 

ns

 

 

 

 

 

 

 

 

 

 

 

1. This parameter is guaranteed by design but not tested.

#

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

.

!

 

 

 

 

 

 

Input Pulse Levels

VIL = 0, VIH = 3.0

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Rise and Fall

5

ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input and Output Reference Level

1.5

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Timing Reference Level

1.5

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes:

 

 

 

 

 

 

 

 

VZ is programmable from -2V to +7V.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOL & IOH programmable from 0 to 16mA.

 

 

 

 

 

 

 

Tester Impedance Z0 = 75W.

 

 

 

 

 

 

 

 

VZ is typically the midpoint of VOH and VOL.

 

 

 

 

 

 

 

IOL & IOH are adjusted to simulate a typical resistive load circuit.

 

 

 

 

 

 

 

 

 

 

ATE tester includes jig capacitance.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520

 

White Electronic Designs WSF128K16-37G1UIA, WSF128K16-37G1UI, WSF128K16-37G1UCA, WSF128K16-37G1UC, WSF128K16-72HIA Datasheet

 

$ / '

'"

'

White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

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