White Electronic Designs WF8M32-150G4DM5, WF8M32-150G4DI5, WF8M32-150G4DC5, WF8M32-120G4DM5, WF8M32-120G4DI5 Datasheet

8Mx32 5V FLASH MODULE ADVANCED*

FEATURES

■Access Time of 100, 120, 150ns

■Packaging:

•68 Lead, 40 mm (1.560") square hermetic CQFP, 5.2 mm (0.205") high (Package 503)

■Sector Architecture

•32 equal size sectors of 64KBytes per each 2Mx8 chip

•Any combination of sectors can be erased. Also supports full chip erase.

■100,000 Write/Erase Cycles Minimum

■Organized as 8Mx32

■Commercial, Industrial, and Military Temperature Ranges

■5 Volt Read and Write. 5V ± 10% Supply.

■Low Power CMOS

WF8M32-XG4DX5

HI-RELIABILITY PRODUCT

■Data Polling and Toggle Bit feature for detection of program or erase cycle completion.

■Supports reading or programming data to a sector not being erased.

■RESET pin resets internal state machine to the read mode. (Not available in HIP package for WF2M32-XHX5)

■Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation, Seperate Power and Ground Planes to improve noise immunity.

■Built in Buffering.

*This data sheet describes a product that may or may not be under development, and is subject to change or cancellation without notice.

Note: For programming information refer to Flash Programming 16M5 Application Note.

FIG. 1 PIN CONFIGURATION FOR WF8M32-XG4DX5

TOP VIEW

PIN DESCRIPTION

			NC		A0		A1			A2			A3			A4			A5			CS1			GND		CS3			WE A6 A7 A8 A9 A10												VCC
		9			8		7		6			5			4			3			2			1		68 67 66 65 64 63 62 61
I/O0		10																																								60			I/O16
I/O1		11																																								59			I/O17
I/O2		12																																								58			I/O18
I/O3		13																																								57			I/O19
I/O4		14																																								56			I/O20
I/O5		15																																								55			I/O21
I/O6		16																																								54			I/O22
I/O7		17																																								53			I/O23
GND		18																																								52			GND
I/O8		19																																								51			I/O24
I/O9		20																																								50			I/O25
I/O10		21																																								49			I/O26					1
I/O11		22																																								48			I/O27	RESET				4
I/O12		23																																								47			I/O28	CS 1-4
																																																		1
I/O13		24																																								46			I/O29			WE
																																																		1
																																																OE
I/O14		25																																								45			I/O30		A0-22			23
I/O15		26																																								44			I/O31
		27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43

I/O0-31

Data Inputs/Outputs

A0-22

Address Inputs

WE

Write Enable

Chip Selects

CS

1-4

Output Enable

OE

VCC

Power Supply

Reset

RESET

GND

Ground

BLOCK DIAGRAM

NC

Not Connected

1

Interface

1

4

1

23

CS

1

CS

2

CS

3

CS

4

VCC

A11

A12

A13

A14

A15

A16

CS2

OE

CS4

A17

A18

A19

A20

A21

RESET

A22

2M x 8

2M x 8

2M x 8

2M x 8

2M x 8

2M x 8

2M x 8

2M x 8

2M x 8

2M x 8

2M x 8

2M x 8

2M x 8

2M x 8

2M x 8

2M x 8

I/O 0 - 7

I/O 8 - 1 5

I/O 1 6 - 2 3

I/O 2 4 - 3 1

8

8

8

8

32

I/O0-31

CS1 selects I/O0-7, CS2 selects I/O8-15, CS3 selects I/O16-23, CS4 selects I/O24-31

October 1999 Rev. 3

1

White Electronic Designs Corporation • [phone] • www.whiteedc.com

WF8M32-XG4DX5

ABSOLUTE MAXIMUM RATINGS

Parameter	Symbol	Ratings	Unit
Voltage on Any Pin Relative to VSS	VT	-2.0 to +7.0	V
Power Dissipation	PT	8	W
Storage Temperature	Tstg	-65 to +125	°C
Short Circuit Output Current	IOS	100	mA
Endurance - Write/Erase Cycles		100,000 min	cycles
(Mil Temp)
Data Retention (Mil Temp)		20	years

RECOMMENDED DC OPERATING CONDITIONS

Parameter	Symbol	Min	Typ	Max	Unit
Supply Voltage	VCC	4.5	5.0	5.5	V
Ground	VSS	0	0	0	V
Input High Voltage	VIH	2.0	-	VCC + 0.5	V
Input Low Voltage	VIL	-0.5	-	+0.8	V
Operating Temperature (Mil.)	TA	-55	-	+125	°C
Operating Temperature (Ind.)	TA	-40	-	+85	°C

CAPACITANCE

(TA = +25°C)

		Parameter					Symbol	Conditions	Max	Unit
					capacitance		COE	VIN = 0 V, f = 1.0 MHz	20	pF
		OE
							CWE	VIN = 0 V, f = 1.0 MHz	20	pF
		WE			capacitance
							CCS	VIN = 0 V, f = 1.0 MHz	20	pF
		CS	1-4 capacitance
		Data I/O capacitance					CI/O	VI/O = 0 V, f = 1.0 MHz	60	pF
		Address input capacitance					CAD	VIN = 0 V, f = 1.0 MHz	20	pF
								VIN = O V, f = 1.0 MHz	20	pF
	RESET capacitance						CRST

This parameter is guaranteed by design but not tested.

DC CHARACTERISTICS - CMOS COMPATIBLE

(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)

Parameter

Symbol

Conditions

Min

Max

Unit

Input Leakage Current

ILI

VCC = 5.5, VIN = GND to VCC

10

A

Output Leakage Current

ILOx32

VCC = 5.5, VIN = GND to VCC

10

A

VCC Active Current for Read (1)

ICC1

= VIH, f = 5MHz

640

mA

CS

= VIL,

OE

VCC Active Current for Program or Erase (2)

ICC2

CS

= VIL, OE = VIH

960

mA

= Vcc ± 0.3V

VCC Standby Current

ICC3

VCC = 5.5,

CS

= VIH, f = 5MHz,

RESET

160

mA

Output Low Voltage

VOL

IOL = 12.0 mA, VCC = 4.5

0.45

V

Output High Voltage

VOH

IOH = -2.5 mA, VCC = 4.5

0.85 x

V

Vcc

Low VCC Lock-Out Voltage

VLKO

3.2

4.2

V

NOTES:

1.The Icc current listed includes both the DC operating current and the frequency dependent component (@ 5MHz). The frequency component typically is less than 2mA/MHz, with OE at VIH.

2.Icc active while Embedded Algorithm (program or erase) is in progress.

3.DC test conditions VIL = 0.3V, VIH = VCC - 0.3V

White Electronic Designs Corporation • Phoenix, AZ • [phone]

2

WF8M32-XG4DX5

AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS - WE CONTROLLED

(VCC = 5.0V, TA = -55°C to +125°C)

Parameter			Symbol		-100				-120			-150		Unit
					Min		Max	Min		Max	Min		Max
Write Cycle Time			tAVAV	tWC	100			120			150			ns
Chip Select Setup Time			tELWL	tCS	0			0			0			ns
Write Enable Pulse Width			tWLWH	tWP	50			50			50			ns
Address Setup Time			tAVWL	tAS	0			0			0			ns
Data Setup Time			tDVWH	tDS	50			50			50			ns
Data Hold Time			tWHDX	tDH	0			0			0			ns
Address Hold Time			tWLAX	tAH	50			50			50			ns
Write Enable Pulse Width High			tWHWL	tWPH	20			20			20			ns
Duration of Byte Programming Operation (1)			tWHWH1				300			300			300	s
Sector Erase (2)			tWHWH2				15			15			15	sec
Read Recovery Time before Write			tGHWL		0			0			0			s
VCC Setup Time			tVCS		50			50			50			s
Chip Programming Time							44			44			44	sec
Chip Erase Time (3)							256			256			256	sec
Output Enable Hold Time (4)				tOEH	10			10			10			ns
		Pulse Width		tRP	500			500			500			ns
	RESET

NOTES:

1.Typical value for tWHWH1 is 7 s.

2.Typical value for tWHWH2 is 1sec.

3.Typical value for Chip Erase Time is 32sec.

4.For Toggle and Data Polling.

AC CHARACTERISTICS – READ-ONLY OPERATIONS

(VCC = 5.0V, TA = -55°C to +125°C)

Parameter

Symbol

-100

-120

-150

Unit

Min

Max

Min

Max

Min

Max

Read Cycle Time

tAVAV

tRC

100

120

150

ns

Address Access Time

tAVQV

tACC

100

120

150

ns

Chip Select Access Time

tELQV

tCE

100

120

150

ns

Output Enable to Output Valid

tGLQV

tOE

50

50

55

ns

Chip Select High to Output High Z (1)

tEHQZ

tDF

30

30

35

ns

Output Enable High to Output High Z (1)

tGHQZ

tDF

30

30

35

ns

Output Hold from Addresses,

or

Change,

tAXQX

tOH

0

0

0

ns

CS

OE

whichever is First

RST Low to Read Mode (1)

tReady

20

20

20

s

1. Guaranteed by design, not tested.

3	White Electronic Designs Corporation • Phoenix, AZ • [phone]