White Electronic Designs WMS512K8BV-20CCE, WMS512K8BV-17FMEA, WMS512K8BV-17FME, WMS512K8BV-17FIEA, WMS512K8BV-17FIE Datasheet

512Kx8 MONOLITHIC SRAM

FEATURES

■Access Times 15, 17, 20ns

■MIL-STD-883 Compliant Devices Available

■Revolutionary, Center Power/Ground Pinout JEDEC Approved

•36 lead Ceramic SOJ (Package 100)

•36 lead Ceramic Flat Pack (Package 226)

■Evolutionary, Corner Power/Ground Pinout JEDEC Approved

•32 pin Ceramic DIP (Package 300)

•32 lead Ceramic SOJ (Package 101)

•32 lead Ceramic Flat Pack (Package 220)

WMS512K8BV-XXXE

HI-RELIABILITY PRODUCT

PRELIMINARY*

■Low Voltage Operation:

•3.3V ± 10% Power Supply

■BiCMOS:

•Radiation Tolerant with Epitaxial Layer Die

■Commercial, Industrial and Military Temperature Range

■TTL Compatible Inputs and Outputs

■Fully Static Operation:

•No clock or refresh required.

■Three State Output.

*This data sheet describes a product under development, not fully characterized, and is subject to change without notice.

REVOLUTIONARY PINOUT

36 FLAT PACK

36 CSOJ

TOP VIEW

		A0					1	36				NC
		A1					2	35				A18
		A2					3	34				A17
		A3					4	33				A16
		A4					5	32				A15
							6	31
		CS										OE
I/O0							7	30				I/O7
I/O1							8	29				I/O6
VCC							9	28				GND
GND							10	27				VCC
I/O2							11	26				I/O5
I/O3							12	25				I/O4
							13	24				A14
	WE
		A5					14	23				A13
		A6					15	22				A12
		A7					16	21				A11
		A8					17	20				A10
		A9					18	19				NC

EVOLUTIONARY PINOUT

32 DIP

32 CSOJ (DE)

32 FLAT PACK (FE)

TOP VIEW

A18			1	32			VCC
A16			2	31			A15
A14			3	30			A17
A12			4	29
							WE
A7			5	28			A13
A6			6	27			A8
A5			7	26			A9
A4			8	25			A11
A3
			9	24			OE
A2			10	23			A10
A1
			11	22			CS
A0			12	21			I/O7
I/O0			13	20			I/O6
I/O1			14	19			I/O5
I/O2			15	18			I/O4
GND			16	17			I/O3

							PIN DESCRIPTION
	A0-18								Address Inputs
	I/O0-7								Data Input/Output
									Chip Select
			CS
									Output Enable
			OE
									Write Enable
		WE
	VCC								Power Supply
	GND								Ground
June 1999 Rev. 2							1		White Electronic Designs Corporation • Phoenix, AZ • [phone]

WMS512K8BV-XXXE

ABSOLUTE MAXIMUM RATINGS

Parameter	Symbol	Min	Max	Unit
Operating Temperature	TA	-55	+125	°C
Storage Temperature	TSTG	-65	+150	°C
Signal Voltage Relative to GND	VG	-0.5	4.6	V
Junction Temperature	TJ		150	°C
Supply Voltage	VCC	-0.5	4.6	V

RECOMMENDED OPERATING CONDITIONS

Parameter	Symbol	Min	Max	Unit
Supply Voltage	VCC	3.0	3.6	V
Input High Voltage	VIH	2.2	VCC + 0.3	V
Input Low Voltage	VIL	-0.3	+0.8	V
Operating Temp. (Mil.)	TA	-55	+125	°C

TRUTH TABLE

CS

OE

WE

Mode

Data I/O

Power

H

X

X

Standby

High Z

Standby

L

L

H

Read

Data Out

Active

L

X

L

Write

Data In

Active

L

H

H

Out Disable

High Z

Active

CAPACITANCE

(TA = +25°C)

Parameter	Symbol	Condition	Max	Unit
Input capacitance	CIN	VIN = 0V, f = 1.0MHz	12	pF
Output capacitance	COUT	VOUT = 0V, f = 1.0MHz	12	pF

This parameter is guaranteed by design but not tested.

DC CHARACTERISTICS

(VCC = 3.3V, GND = 0V, TA = -55°C to +125°C)

Parameter

Sym

Conditions

Min

Max

Units

Input Leakage Current

ILI

VCC = 5.5, VIN = GND to VCC

10

A

Output Leakage Current

ILO

= VIH,

= VIH, VOUT = GND to VCC

10

A

CS

OE

Operating Supply Current

ICC

= VIL,

= VIH, f = 5MHz, Vcc = 5.5

120

mA

CS

OE

Standby Current

ISB

= VIH,

= VIH, f = 5MHz, Vcc = 5.5

15

mA

CS

OE

Output Low Voltage

VOL

IOL = 8mA

0.4

V

Output High Voltage

VOH

IOH = -4.0mA

2.4

V

NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V

White Electronic Designs Corporation • Phoenix, AZ • [phone]

2

WMS512K8BV-XXXE

AC CHARACTERISTICS

(VCC = 3.3V, GND = 0V, TA = -55°C to +125°C)

Parameter	Symbol		-15			-17			-20		Units
Read Cycle		Min		Max	Min		Max	Min		Max
Read Cycle Time	tRC	15			17			20			ns
Address Access Time	tAA			15			17			20	ns
Output Hold from Address Change	tOH	0			0			0			ns
Chip Select Access Time	tACS			15			17			20	ns
Output Enable to Output Valid	tOE			7			8			10	ns
Chip Select to Output in Low Z	tCLZ1	2			2			2			ns
Output Enable to Output in Low Z	tOLZ1	0			0			0			ns
Chip Disable to Output in High Z	tCHZ1			7			8			10	ns
Output Disable to Output in High Z	tOHZ1			7			8			10	ns

1. This parameter is guaranteed by design but not tested.

AC CHARACTERISTICS

(VCC = 3.3V, GND = 0V, TA = -55°C to +125°C)

Parameter	Symbol		-15			-17			-20		Units
Write Cycle		Min		Max	Min		Max	Min		Max
Write Cycle Time	tWC	15			17			20			ns
Chip Select to End of Write	tCW	10			12			14			ns
Address Valid to End of Write	tAW	10			12			14			ns
Data Valid to End of Write	tDW	8			9			10			ns
Write Pulse Width	tWP	12			14			14			ns
Address Setup Time	tAS	0			0			0			ns
Address Hold Time	tAH	0			0			0			ns
Output Active from End of Write	tOW1	2			3			3			ns
Write Enable to Output in High Z	tWHZ1			8			8			9	ns
Data Hold Time	tDH	0			0			0			ns

1. This parameter is guaranteed by design but not tested.

AC TEST CIRCUIT

	I OL
	Current Source
D.U.T.	VZ ≈1.5V
Ceff = 50 pf	(Bipolar Supply)

IOH

Current Source

AC TEST CONDITIONS

Parameter	Typ	Unit
Input Pulse Levels	VIL = 0, VIH = 2.5	V
Input Rise and Fall	5	ns
Input and Output Reference Level	1.5	V
Output Timing Reference Level	1.5	V

NOTES:

VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 Ω.

VZ is typically the midpoint of VOH and VOL.

IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance.

3	White Electronic Designs Corporation • Phoenix, AZ • [phone]