White Electronic Designs WMS128K8V-35DRCA, WMS128K8V-35DRC, WMS128K8V-35CMA, WMS128K8V-35CM, WMS128K8V-35CLMA Datasheet

128Kx8 3.3V MONOLITHIC SRAM

FEATURES

■Access Times 15, 17, 20, 25, 35ns

■Revolutionary, Center Power/Ground Pinout JEDEC Approved

•32 lead Ceramic SOJ (Package 101)

•32 lead Ceramic Flat Pack (Package 220)**

■Evolutionary, Corner Power/Ground Pinout JEDEC Approved

•32 pin Ceramic DIP (Package 300)

■32 pin, Rectangular Ceramic Leadless Chip Carrier (Package 601)

WMS128K8V-XXX

PRELIMINARY*

■MIL-STD-883 Compliant Devices Available

■Commercial, Industrial and Military Temperature Range

■3.3 Volt Power Supply

■Low Power CMOS

■TTL Compatible Inputs and Outputs

*This data sheet describes a product under development, not fully characterized, and is subject to change without notice.

**Package under developement.

REVOLUTIONARY PINOUT

EVOLUTIONARY PINOUT

32 CSOJ (DR)

32 DIP (C)

32 FLATPACK (FR)**

TOP VIEW

TOP VIEW

A0

1

32

A16

A1

2

31

A15

A2

3

30

A14

A3

4

29

A13

CS

5

28

OE

I/O1

6

27

I/O8

I/O2

7

26

I/O7

VCC

8

25

VSS

VSS

9

24

VCC

I/O3

10

23

I/O6

I/O4

11

22

I/O5

WE

12

21

A12

A4

13

20

A11

A5

14

19

A10

A6

15

18

A9

A7

16

17

A8

PIN DESCRIPTION

A0-16

Address Inputs

I/O0-7

Data Input/Outputs

Chip Select

CS

Output Enable

OE

Write Enable

WE

VCC

+3.3V Power

VSS

Ground

NC

Not Connected

32 CLCC

TOP VIEW

June 2000 Rev. 3

1

White Electronic Designs Corporation • Phoenix, AZ • [phone]

WMS128K8V-XXX

ABSOLUTE MAXIMUM RATINGS

Parameter	Symbol	Min	Max	Unit
Operating Temperature	TA	-55	+125	° C
Storage Temperature	TSTG	-65	+150	° C
Signal Voltage Relative to GND	VG	-0.5	Vcc+0.5	V
Junction Temperature	TJ		150	° C
Supply Voltage	VCC	-0.5	5.5	V

RECOMMENDED OPERATING CONDITIONS

Parameter	Symbol	Min	Max	Unit
Supply Voltage	VCC	3.0	3.6	V
Input High Voltage	VIH	2.2	VCC + 0.3	V
Input Low Voltage	VIL	-0.3	+0.8	V
Operating Temp. (Mil.)	TA	-55	+125	° C

TRUTH TABLE

CS

OE

WE

Mode

Data I/O

Power

H

X

X

Standby

High Z

Standby

L

L

H

Read

Data Out

Active

L

X

L

Write

Data In

Active

L

H

H

Out Disable

High Z

Active

CAPACITANCE

(TA = +25° C)

Parameter	Symbol	Condition	Max	Unit
Input capacitance	CIN	VIN = 0V, f = 1.0MHz	20	pF
Output capacitance	COUT	VOUT = 0V, f = 1.0MHz	20	pF

This parameter is guaranteed by design but not tested.

DC CHARACTERISTICS

(VCC = 3.3V ± 0.3V, VSS = 0V, TA = -55° C to +125° C)

Parameter

Sym

Conditions

Min

Max

Units

Input Leakage Current

ILI

VCC = 3.3, VIN = GND to VCC

10

µ A

Output Leakage Current

ILO

= VIH,

= VIH, VOUT = GND to VCC

10

µ A

CS

OE

Operating Supply Current (x 32 Mode)

ICC

= VIL,

= VIH, f = 5MHz, VCC = 3.3

120

mA

CS

OE

Standby Current

ISB

= VIH,

= VIH, f = 5MHz, VCC = 3.3

8

mA

CS

OE

Output Low Voltage

VOL

IOL = 8mA

0.4

V

Output High Voltage

VOH

IOH = -4.0mA

2.4

V

AC TEST CIRCUIT

	I OL
	Current Source
D.U.T.	VZ ≈ 1.5V
Ceff = 50 pf	(Bipolar Supply)

IOH

Current Source

AC TEST CONDITIONS

Parameter	Typ	Unit
Input Pulse Levels	VIL = 0, VIH = 2.5	V
Input Rise and Fall	5	ns
Input and Output Reference Level	1.5	V
Output Timing Reference Level	1.5	V

NOTES:

VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 Ω .

VZ is typically the midpoint of VOH and VOL.

IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance.

White Electronic Designs Corporation • Phoenix, AZ • [phone]

2

WMS128K8V-XXX

AC CHARACTERISTICS

(VCC = 3.3V, TA = -55° C to +125° C)

Parameter	Symbol	-15				-17		-20				-25		-35		Units
Read Cycle		Min		Max	Min		Max	Min		Max	Min		Max	Min Max
Read Cycle Time	tRC	15			17			20			25			35		ns
Address Access Time	tAA			15			17			20			25		35	ns
Output Hold from Address Change	tOH	0			0			0			0			0		ns
Chip Select Access Time	tACS			15			17			20			25		35	ns
Output Enable to Output Valid	tOE			10			11			12			15		20	ns
Chip Select to Output in Low Z	tCLZ1	5			5			5			5			5		ns
Output Enable to Output in Low Z	tOLZ1	5			5			5			5			5		ns
Chip Disable to Output in High Z	tCHZ1			8			9			10			12		15	ns
Output Disable to Output in High Z	tOHZ1			8			9			10			12		15	ns

1. This parameter is guaranteed by design but not tested.

AC CHARACTERISTICS

(VCC = 3.3V, TA = -55° C to +125° C)

Parameter	Symbol	-15				-17		-20				-25			-35		Units
Write Cycle		Min		Max	Min		Max	Min		Max	Min		Max	Min		Max
Write Cycle Time	tWC	15			17			20			25			35			ns
Chip Select to End of Write	tCW	13			14			15			20			30			ns
Address Valid to End of Write	tAW	13			14			15			20			30			ns
Data Valid to End of Write	tDW	10			11			12			15			18			ns
Write Pulse Width	tWP	13			14			15			20			30			ns
Address Setup Time	tAS	0			0			0			0			0			ns
Address Hold Time	tAH	0			0			0			0			0			ns
Output Active from End of Write	tOW1	5			5			5			5			5			ns
Write Enable to Output in High Z	tWHZ1			8			9			10			10			15	ns
Data Hold Time	tDH	0			0			0			0			0			ns

1. This parameter is guaranteed by design but not tested.

3	White Electronic Designs Corporation • Phoenix, AZ • [phone]