White Electronic Designs WF512K64-90G4WM5, WF512K64-90G4WI5, WF512K64-90G4WC5, WF512K64-70G4WM5, WF512K64-70G4WI5 Datasheet

WF512K64-XG4WX5

HI-RELIABILITY PRODUCT

512Kx64 5V FLASH MODULE PRELIMINARY*

FEATURES

■Access Times of 70, 90, 120, 150ns

■Packaging

•116 lead, 40mm square, Hermetic CQFP (Package 504)

■100,000 Erase/Program Cycles Minimum

■Sector Architecture

•8 equal size sectors of 64KBytes each

•Any combination of sectors can be concurrently erased. Also supports full chip erase

■Organized as 512Kx64, user configurable as 1Mx32, 2Mx16, or 4Mx8.

■Commercial, Industrial and Military Temperature Ranges

■5 Volt Programming. 5V ± 10% Supply.

■Low Power CMOS, 6.5mA Standby

■Embedded Erase and Program Algorithms

■TTL Compatible Inputs and CMOS Outputs

■Built-in Decoupling Caps for Low Noise Operation

■Page Program Operation and Internal Program Control Time

■Weight

WF512K64-XG4WX5 - 20 grams typical

*This data sheet describes a product under development, not fully characterized, and is subject to change without notice.

Note: Programming information available upon request.

FIG. 1

I/O3

I/O4

I/O5

I/O6

I/O7

GND

I/O8

I/O9

I/O10

I/O11

I/O12

I/O13

I/O14

I/O15

GND

I/O16

I/O17

I/O18

I/O19

I/O20

I/O21

I/O22

I/O23

GND

I/O24

I/O25

I/O26

I/O27

I/O28

PIN CONFIGURATION FOR WF512K64-XG4WX5

TOP VIEW

I/O2 I/O1 I/O0 VCC WE2 CS2 NC A0 A1 A2 A3 A4 WE1 CS1 NC CS8 WE8 A5 A6 A7 A8 A9 NC CS7 WE7 VCC I/O63 I/O62 I/O61																																																											OE
																																																										A0-18
15 14 13 12 11 10								9 8 7 6 5 4 3 2 1 116 115 114 113 112 111 110 109 108 107 106 105 104 103
16								102																																																		I/O60
17								101																																																		I/O59
18								100																																																		I/O58
19								99																																																		I/O57
20								98																																																		I/O56
21								97																																																		GND
22								96																																																		I/O55
23								95																																																		I/O54
24								94																																																		I/O53
25								93																																																		I/O52
26								92																																																		I/O51
27								91																																																		I/O50
28								90																																																		I/O49
29								89																																																		I/O48
30								88																																																		GND
31								87																																																		I/O47
32								86																																																		I/O46
33								85																																																		I/O45
34								84																																																		I/O44
35								83																																																		I/O43
36								82																																																		I/O42
37								81																																																		I/O41
38								80																																																		I/O40
39								79																																																		GND
40								78																																																		I/O39
41								77																																																		I/O38
42								76																																																		I/O37
43								75																																																		I/O36
44								74																																																		I/O35
45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73
I/O29 I/O30 I/O31 VCC					WE3		CS3 NC NC A18 A17 A16 A15												WE4			CS4			OE			CS5		WE5 A14 A13 A12 A11 A10 NC														CS6		WE6 VCC I/O32 I/O33 I/O34

BLOCK DIAGRAM

WE1 CS1 WE2 CS2 WEx CSx WE8 CS8

	1						2					......					8
		512K x 8						512K x 8										512K x 8
	8					8						8					8
		I/O0-7						I/O8-15					I/O...				I/O56-63

		I/O0-63					Data Inputs/Outputs
		A0-18					Address Inputs
							Write Enables
		WE			1-8
							Chip Selects
		CS		1-8
			OE				Output Enable
		VCC					Power Supply
		GND					Ground
			NC				Not Connected

May 1999 Rev.2

1

White Electronic Designs Corporation • Phoenix, AZ • [phone]

WF512K64-XG4WX5

ABSOLUTE MAXIMUM RATINGS

Parameter		Unit
Operating Temperature	-55 to +125	°C
Supply Voltage Range (VCC)	-2.0 to +7.0	V
Signal voltage range (any pin except A9) (2)	-2.0 to +7.0	V
Storage Temperature Range	-65 to +150	°C
Lead Temperature (soldering, 10 seconds)	+300	°C
Data Retention (Mil Temp)	20 years
Endurance (write/erase cycles) (Mil Temp)	100,000 cycles min.
A9 Voltage for sector protect (VID) (3)	-2.0 to +14.0	V

NOTES:

1. Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability.

2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, inputs may overshoot VSS to -2.0 V for periods of up to 20ns. Maximum DC voltage on output and I/O pins is VCC + 0.5V. During voltage transitions, outputs may overshoot to Vcc + 2.0 V for periods of up to 20ns.

3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9 is +13.5V which may overshoot to 14.0 V for periods up to 20ns.

CAPACITANCE

(TA = +25°C)

	Parameter					Symbol	Conditions	Max	Unit
					capacitance	COE	VIN = 0 V, f = 1.0 MHz	100	pF
	OE
					capacitance	CWE	VIN = 0 V, f = 1.0 MHz	20	pF
	WE
			capacitance			CCS	VIN = 0 V, f = 1.0 MHz	20	pF
		CS
	Data I/O capacitance					CI/O	VI/O = 0 V, f = 1.0 MHz	20	pF
	Address input capacitance					CAD	VIN = 0 V, f = 1.0 MHz	100	pF

This parameter is guaranteed by design but not tested.

RECOMMENDED OPERATING CONDITIONS

Parameter	Symbol	Min	Max	Unit
Supply Voltage	VCC	4.5	5.5	V
Input High Voltage	VIH	2.0	VCC + 0.5	V
Input Low Voltage	V IL	-0.5	+0.8	V
Operating Temp. (Mil.)	TA	-55	+125	°C
Operating Temp. (Ind.)	TA	-40	+85	°C
A9 Voltage for Sector Protect	VID	11.5	12.5	V

DC CHARACTERISTICS - CMOS COMPATIBLE

(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)

Parameter	Symbol				Conditions				Min	Max	Unit
Input Leakage Current	I LI	VCC = 5.5, VIN = GND to VCC								10	µA
Output Leakage Current	I LOx32	VCC = 5.5, VIN = GND to VCC								10	µA
VCC Active Current for Read (1)	ICC1				= VIL,			= VIH, f = 5MHz		380	mA
			CS			OE
VCC Active Current for Program or Erase (2)	ICC2				= VIL,			= VIH		480	mA
			CS			OE
V CC Standby Current	I CC4	VCC = 5.5, CS = VIH, f = 5MHz								1 3	mA
V CC Static Current	I CC3	VCC = 5.5, CS = VIH								1 . 2	mA
Output Low Voltage	VOL	I OL = 8 . 0 mA, V CC = 4 . 5								0 . 45	V
Output High Voltage	VOH1	I OH = - 2 . 5 mA, VCC = 4.5							0 . 85 X VCC		V
Low V CC Lock-Out Voltage	VLKO								3 . 2	4 . 2	V

NOTES:

1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz). The frequency component typically is less than 2 mA/ MHz, with OE at VIH.

2. ICC active while Embedded Algorithm (program or erase) is in progress. 3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V

White Electronic Designs Corporation • Phoenix, AZ • [phone]

2

WF512K64-XG4WX5

AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,CS CONTROLLED

(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)

Parameter	Symbol		-70				-90			-120		-150		Unit
			Min		Max	Min		Max	Min		Max
Write Cycle Time	t AVAV	t WC	70			90			120			150		ns
Write Enable Setup Time	t WLEL	t WS	0			0			0			0		ns
Chip Select Pulse Width	t ELEH	t CP	45			45			50			50		ns
Address Setup Time	tAVEL	t AS	0			0			0			0		ns
Data Setup Time	t DVEH	t DS	45			45			50			50		ns
Data Hold Time	t EHDX	t DH	0			0			0			0		ns
Address Hold Time	tELAX	t AH	45			45			50			50		ns
Chip Select Pulse Width High	t EHEL	t CPH	2 0			2 0			20			20		ns
Duration of Byte Programming Operation (1)	t WHWH1				300			300			300		300	µs
Chip and Sector Erase Time (2)	t WHWH2				15			15			15		15	sec
Read Recovery Time	t GHEL		0			0			0			0		ns
Chip Programming Time					11			11			11		11	sec
Chip Erase Time (3)					64			64			64		64	sec

NOTES:

1. Typical value for tWHWH1 is 7µs.

2. Typical value for tWHWH1 is 1sec.

3. Typical value for Chip Erase Time is 8sec.

FIG. 2

AC TEST CIRCUIT

AC TEST CONDITIONS

Parameter	Typ	Unit
Input Pulse Levels	VIL = 0, VIH = 3.0	V
Input Rise and Fall	5	ns
Input and Output Reference Level	1.5	V
Output Timing Reference Level	1.5	V

NOTES:

VZ is programmable from -2V to +7V.

IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 ý.

VZ is typically the midpoint of VOH and VOL.

IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance.

3	White Electronic Designs Corporation • Phoenix, AZ • [phone]