White Electronic Designs WMS512K8VL-85CIEA, WMS512K8VL-85CIE, WMS512K8VL-85CCEA, WMS512K8VL-85CCE, WMS512K8VL-70DEMEA Datasheet
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WMS512K8V-XXX
512Kx8 MONOLITHIC SRAM PRELIMINARY*
EVOLUTIONARY PINOUT
32 DIP
32 CSOJ (DE)
TOP VIEW
A18 |
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1 |
32 |
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VCC |
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A16 |
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2 |
31 |
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A15 |
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A14 |
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3 |
30 |
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A17 |
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A12 |
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4 |
29 |
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WE |
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A7 |
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5 |
28 |
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A13 |
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A6 |
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6 |
27 |
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A8 |
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A5 |
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7 |
26 |
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A9 |
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A4 |
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8 |
25 |
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A11 |
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A3 |
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9 |
24 |
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OE |
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A2 |
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10 |
23 |
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A10 |
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A1 |
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11 |
22 |
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CS |
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A0 |
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12 |
21 |
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I/O7 |
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I/O0 |
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13 |
20 |
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I/O6 |
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I/O1 |
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14 |
19 |
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I/O5 |
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I/O2 |
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15 |
18 |
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I/O4 |
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GND |
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16 |
17 |
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I/O3 |
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PIN DESCRIPTION
A0-18 |
Address Inputs |
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I/O0-7 |
Data Input/Output |
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Chip Select |
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CS |
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Output Enable |
OE |
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Write Enable |
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WE |
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VCC |
+3.3V Power Supply |
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GND |
Ground |
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FEATURES
■Access Times 70, 85, 100, 120ns
■MIL-STD-883 Compliant Devices Available
■Low Voltage Operation
■Evolutionary, Corner Power/Ground Pinout JEDEC Approved
•32 pin Ceramic DIP (Package 300)
•32 lead Ceramic SOJ (Package 101)
■Commercial, Industrial and Military Temperature Ranges
■Low Power CMOS
■Low Voltage Operation
•3.3V ± 10% Power Supply
■Low Power Data Retention
■TTL Compatible Inputs and Outputs
* This data sheet describes a product under development, not fully characterized, and is subject to change without notice.
2
MONOLITHICS SRAM
April 1998 |
1 |
White Microelectronics • Phoenix, AZ • (602) 437-1520 |
WMS512K8V-XXX
2
MONOLITHICS SRAM
ABSOLUTE MAXIMUM RATINGS
Parameter |
Symbol |
Min |
Max |
Unit |
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Operating Temperature |
TA |
-55 |
+125 |
°C |
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Storage Temperature |
TSTG |
-65 |
+150 |
°C |
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Signal Voltage Relative to GND |
VG |
-0.5 |
Vcc+0.5 |
V |
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Junction Temperature |
TJ |
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150 |
°C |
Supply Voltage |
VCC |
-0.5 |
7.0 |
V |
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RECOMMENDED OPERATING CONDITIONS
Parameter |
Symbol |
Min |
Max |
Unit |
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Supply Voltage |
VCC |
3.0 |
3.6 |
V |
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Input High Voltage |
VIH |
2.2 |
VCC + 0.3 |
V |
Input Low Voltage |
VIL |
-0.3 |
+0.8 |
V |
Operating Temp. (Mil.) |
TA |
-55 |
+125 |
°C |
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TRUTH TABLE
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CS |
OE |
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WE |
Mode |
Data I/O |
Power |
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H |
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X |
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X |
Standby |
High Z |
Standby |
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L |
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L |
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H |
Read |
Data Out |
Active |
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L |
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X |
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L |
Write |
Data In |
Active |
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L |
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H |
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H |
Out Disable |
High Z |
Active |
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CAPACITANCE
(TA = +25°C)
Parameter |
Symbol |
Condition |
Max |
Unit |
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Input capacitance |
CIN |
VIN = 0V, f = 1.0MHz |
12 |
pF |
Output capacitance |
COUT |
VOUT = 0V, f = 1.0MHz |
12 |
pF |
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This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
(VCC = 3.3V, GND = 0V, TA = -55°C to +125°C)
Parameter |
Symbol |
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Conditions |
Min |
Max |
Units |
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Input Leakage Current |
ILI |
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VCC = 3.6, VIN = GND to VCC |
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10 |
μA |
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Output Leakage Current |
ILO |
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= VIH, |
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= VIH, VOUT = GND to VCC |
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10 |
μA |
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CS |
OE |
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Operating Supply Current |
ICC |
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= VIL, |
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= VIH, f = 5MHz, Vcc = 3.6 |
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25 |
mA |
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CS |
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OE |
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Standby Current |
ISB |
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= VIH, |
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= VIH, f = 5MHz, Vcc = 3.6 |
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400 |
μA |
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CS |
OE |
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Output Low Voltage |
VOL |
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IOL = 2.1mA, VCC = 3.0 |
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0.4 |
V |
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Output High Voltage |
VOH |
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IOH = -1.0mA, VCC = 3.0 |
2.4 |
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V |
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NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
White Microelectronics • Phoenix, AZ • (602) 437-1520 |
2 |
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