White Electronic Designs WMF128K8-90FFQ5A, WMF128K8-90FFQ5, WMF128K8-90FFM5A, WMF128K8-90FFM5, WMF128K8-70FEI5A Datasheet

WMF128K8-XXX5

HI-RELIABILITY PRODUCT

128Kx8 MONOLITHIC FLASH, SMD 5962-96690

FEATURES

■Access Times of 50*, 60, 70, 90, 120, 150ns

■Packaging

•32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101)

•32 pin, Hermetic Ceramic, 0.600" DIP (Package 300)

•32 lead, Flatpack (Package 220)

•32 lead, Formed Flatpack (Package 221)

•32 pin, Rectangular Ceramic Leadless Chip Carrier (Package 601)

■100,000 Erase/Program Cycles Minimum

■Sector Erase Architecture

•8 equal size sectors of 16KBytes each

•Any combination of sectors can be concurrently erased. Also supports full chip erase

■Organized as 128Kx8

■Commercial, Industrial and Military Temperature Ranges

■5 Volt Programming. 5V ± 10% Supply.

■Low Power CMOS

■Embedded Erase and Program Algorithms

■TTL Compatible Inputs and CMOS Outputs

■Page Program Operation and Internal Program Control Time.

Note: For programming information refer to Flash Programming 1M5 Application Note.

*The access time of 50ns is available in Industrial and Commercial temperature ranges only.

PIN CONFIGURATION FOR WMF128K8-XXX5

PIN CONFIGURATION FOR WMF128K8-XCLX5

32 DIP

32 CSOJ

32 FLATPACK

TOP VIEW

NC			1	32		VCC
A16			2	31
						WE
A15			3	30		NC
A12			4	29		A14
A7			5	28		A13
A6			6	27		A8
A5			7	26		A9
A4			8	25		A11
A3			9	24
						OE
A2			10	23		A10
A1			11	22
						CS
A0			12	21		I/O7
I/O0			13	20		I/O6
I/O1			14	19		I/O5
I/O2			15	18		I/O4
VSS			16	17		I/O3

32 CLCC

TOP VIEW

	A12	A15	A16	NC	VCC		WE	NC
	4	3	2	1	32 31 30
A7	5							29	A14
A6	6							28	A13
A5	7							27	A8
A4	8							26	A9
A3	9							25	A11
A2	10							24
									OE
A1	11							23	A10
A0	12							22
										CS
I/O0	13							21	I/O7
	14 15 16 17 18 19 20
	I/O1	I/O2	VSS	I/O3	I/O4		I/O5	I/O6

								PIN DESCRIPTION
	A0-16								Address Inputs
	I/O0-7								Data Input/Output
									Chip Select
			CS
									Output Enable
				OE
									Write Enable
		WE
	VCC								+5.0V Power
	VSS								Ground
April 2001 Rev. 5								1	White Electronic Designs Corporation • [phone] • www.whiteedc.com

WMF128K8-XXX5

ABSOLUTE MAXIMUM RATINGS (1)

Parameter		Unit
Operating Temperature	-55 to +125	°C
Supply Voltage Range (VCC)	-2.0 to +7.0	V
Signal voltage range (any pin except A9) (2)	-2.0 to +7.0	V
Storage Temperature Range	-65 to +150	°C
Lead Temperature (soldering, 10 seconds)	+300	°C
Data Retention Mil Temp	10	years
Endurance (write/erase cycles) Mil Temp	10,000 min.	cycles
A9 Voltage for sector protect (VID) (3)	-2.0 to +14.0	V

NOTES:

1.Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability.

2.Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, inputs may overshoot VSS to -2.0 V for periods of up to 20ns. Maximum DC voltage on output and I/O pins is VCC + 0.5V. During voltage transitions, outputs may overshoot to Vcc + 2.0 V for periods of up to 20ns.

3.Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9 is +13.5V which may overshoot to 14.0 V for periods up to 20ns.

RECOMMENDED OPERATING CONDITIONS

Parameter	Symbol	Min	Max	Unit
Supply Voltage	VCC	4.5	5.5	V
Input High Voltage	VIH	2.0	VCC + 0.3	V
Input Low Voltage	VIL	-0.5	+0.8	V
Operating Temp. (Mil.)	TA	-55	+125	°C
Operating Temp. (Ind.)	TA	-40	+85	°C
A9 Voltage for Sector Protect	VID	11.5	12.5	V

CAPACITANCE

(TA = +25°C)

Parameter	Symbol	Conditions	Max	Unit
Address Input capacitance	CAD	VI/O = 0 V, f = 1.0 MHz	15	pF
Output Enable capacitance	COE	VIN = 0 V, f = 1.0 MHz	15	pF
Write Enable capacitance	CWE	VIN = 0 V, f = 1.0 MHz	15	pF
Chip Select capacitance	CCS	VIN = 0 V, f = 1.0 MHz	15	pF
Data I/O capacitance	CI/O	VI/O = 0 V, f = 1.0 MHz	15	pF

This parameter is guaranteed by design but not tested.

DC CHARACTERISTICS - CMOS COMPATIBLE

(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)

Parameter

Symbol

Conditions

Min

Max

Unit

Input Leakage Current

ILI

VCC = 5.5, VIN = GND to VCC

10

µA

Output Leakage Current

ILO

VCC = 5.5, VIN = GND to VCC

10

µA

VCC Active Current for Read (1)

ICC1

= VIL,

= VIH

35

mA

CS

OE

VCC Active Current for Program

ICC2

= VIH

50

mA

CS

= VIL,

OE

or Erase (2)

VCC Standby Current

ICC3

VCC = 5.5,

= VIH, f = 5MHz

1.6

mA

CS

Output Low Voltage

VOL

IOL = 8.0 mA, VCC = 4.5

0.45

V

Output High Voltage

VOH1

IOH = -2.5 mA, VCC = 4.5

0.85 x VCC

V

Output High Voltage

VOH2

IOH = -100 µA, VCC = 4.5

VCC - 0.4

V

Low VCC Lock Out Voltage

VLKO

3.2

V

NOTES:

1.The ICC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz). The frequency component typically is less than 2 mA/MHz, with OE at VIH.

2.ICC active while Embedded Algorithm (program or erase) is in progress.

3.DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V

AC TEST CIRCUIT

	I OL
	Current Source
D.U.T.	VZ ≈1.5V
Ceff = 50 pf	(Bipolar Supply)

IOH

Current Source

AC TEST CONDITIONS

Parameter	Typ	Unit
Input Pulse Levels	VIL = 0, VIH = 3.0	V
Input Rise and Fall	5	ns
Input and Output Reference Level	1.5	V
Output Timing Reference Level	1.5	V

NOTES:

VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 Ω.

VZ is typically the midpoint of VOH and VOL.

IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance.

White Electronic Designs Corporation • [phone] • www.whiteedc.com

2

WMF128K8-XXX5

AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, WE CONTROLLED

(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)

Parameter			Symbol		-50				-60		-70			-90			-120		-150		Unit
					Min		Max	Min		Max	Min		Max	Min		Max	Min	Max	Min	Max
Write Cycle Time			tAVAV	tWC	50			60			70			90			120		150		ns
Chip Select Setup Time			tELWL	tCS	0			0			0			0			0		0		ns
Write Enable Pulse Width			tWLWH	tWP	25			30			35			45			50		50		ns
Address Setup Time			tAVWL	tAS	0			0			0			0			0		0		ns
Data Setup Time			tDVWH	tDS	25			30			30			45			50		50		ns
Data Hold Time			tWHDX	tDH	0			0			0			0			0		0		ns
Address Hold Time			tWLAX	tAH	40			45			45			45			50		50		ns
Chip Select Hold Time			tWHEH	tCH	0			0			0			0			0		0		ns
Write Enable Pulse Width High			tWHWL	tWPH	20			20			20			20			20		20		ns
Duration of Byte Programming Operation (min)			tWHWH1		14			14			14			14			14		14		s
Sector Erase Time			tWHWH2		2.2		60	2.2		60	2.2		60	2.2		60	2.2	60	2.2	60	sec
Read Recovery Time Before Write			tGHWL		0			0			0			0			0		0		ns
VCC Setup Time				tVCS	50			50			50			50			50		50		s
Chip Programming Time							12.5			12.5			12.5			12.5		12.5		12.5	sec
Output Enable Setup Time				tOES	0			0			0			0			0		0		ns
Output Enable Hold Time (1)				tOEH	10			10			10			10			10		10		ns

1. For Toggle and Data Polling.

AC CHARACTERISTICS – READ ONLY OPERATIONS

(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)

	Parameter							Symbol		-50			-60		-70		-90		-120		-150		Unit
										Min		Max	Min Max		Min Max		Min Max		Min Max		Min Max
	Read Cycle Time							tAVAV	tRC	50			60		70		90		120		150		ns
	Address Access Time							tAVQV	tACC			50		60		70		90		120		150	ns
	Chip Select Access Time							tELQV	tCE			50		60		70		90		120		150	ns
		to Output Valid						tGLQV	tOE			25		30		35		40		50		55	ns
	OE
	Chip Select to Output High Z (1)							tEHQZ	tDF			20		20		20		25		30		35	ns
			High to Output High Z (1)					tGHQZ	tDF			20		20		20		25		30		35	ns
	OE
	Output Hold from Address,				or		Change,	tAXQX	tOH	0			0		0		0		0		0		ns
				CS		OE
	whichever is first

1. Guaranteed by design, not tested.

3	White Electronic Designs Corporation • [phone] • www.whiteedc.com

WMF128K8-XXX5

AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, CS CONTROLLED

(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)

Parameter									Symbol		-50		-60			-70				-90		-120		-150		Unit
											Min	Max	Min		Max	Min		Max	Min		Max	Min	Max	Min	Max
		Write Cycle Time							tAVAV	tWC	50		60			70			90			120		150		ns
									tWLEL	tWS	0		0			0			0			0		0		ns
		WE				Setup Time
					Pulse Width				tELEH	tCP	25		30			35			45			50		50		ns
		CS
		Address Setup Time							tAVEL	tAS	0		0			0			0			0		0		ns
		Data Setup Time							tDVEH	tDS	25		30			30			45			50		50		ns
		Data Hold Time							tEHDX	tDH	0		0			0			0			0		0		ns
		Address Hold Time							tELAX	tAH	40		45			45			45			50		50		ns
								High	tEHWH	tWH	0		0			0			0			0		0		ns
		WE			Hold from		WE
									tEHEL	tCPH	20		20			20			20			20		20		ns
		CS	Pulse Width High
		Duration of Programming Operation							tWHWH1		14		14			14			14			14		14		s
		Duration of Erase Operation							tWHWH2		2.2	60	2.2		60	2.2		60	2.2		60	2.2	60	2.2	60	sec
		Read Recovery before Write							tGHEL		0		0			0			0			0		0		ns
		Chip Programming Time										12.5			12.5			12.5			12.5		12.5		12.5	sec

White Electronic Designs Corporation • [phone] • www.whiteedc.com

4

WMF128K8-XXX5

AC WAVEFORMS FOR READ OPERATIONS

High Z

tDF

tOH

Output Valid

tRC	Addresses Stable	tOE
		tCE
		tACC

High Z

Addresses		CS		OE		WE	Outputs

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