White Electronic Designs WS128K32N-55H1I, WS128K32N-55H1CA, WS128K32N-55H1C, WS128K32N-55G4TQA, WS128K32N-55G4TQ Datasheet

WS128K32-XXX

HI-RELIABILITY PRODUCT

128Kx32 SRAM MODULE, SMD 5962-93187 & 5962-95595

FEATURES

■Access Times of 15, 17, 20, 25, 35, 45, 55ns

■MIL-STD-883 Compliant Devices Available

■Packaging

•66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP (Package 400)

•68 lead, 40mm CQFP (G4T), 3.56mm (0.140") (Package 502).

•68 lead, 22.4mm CQFP (G2T), 4.57mm (0.180"), (Package 509)

•68 lead, 22.4mm Low Profile CQFP (G1U), 3.57mm (0.140"), (Package 519)

■Organized as 128Kx32; User Configurable as 256Kx16 or 512Kx8

■Low Power Data Retention - only available in G2T package type

■Commercial, Industrial and Military Temperature Ranges

■5 Volt Power Supply

■Low Power CMOS

■TTL Compatible Inputs and Outputs

■Built in Decoupling Caps and Multiple Ground Pins for Low Noise Operation

■Weight:

WS128K32-XG1UX - 5 grams typical WS128K32-XG2TX - 8 grams typical WS128K32-XH1X - 13 grams typical WS128K32-XG4TX - 20 grams typical

■All devices are upgradeable to 512Kx32

FIG. 1 PIN CONFIGURATION FOR WS128K32N-XH1X

TOP VIEW

PIN DESCRIPTION

1

12

23

34

45

56

I/O0-31 Data Inputs/Outputs

I/O8

WE2

I/O15

I/O24

VCC

I/O31

A0-16

Address Inputs

WE1-4

Write Enables

I/O9

CS2

I/O14

I/O25

CS4

I/O30

CS1-4

Chip Selects

I/O10

GND

I/O13

I/O26

WE4

I/O29

OE

Output Enable

A13

I/O11

I/O12

A6

I/O27

I/O28

VCC

Power Supply

A14

A10

OE

A7

A3

A0

GND

Ground

NC

Not Connected

A15

A11

NC

NC

A4

A1

A16

A12

WE1

A8

A5

A2

BLOCK DIAGRAM

NC

VCC

I/O7

A9

WE3

I/O23

WE1CS1

WE2CS2

WE3CS3

WE4CS4

I/O0

CS1

I/O6

I/O16

CS3

I/O22

OE

A 0 - 1 6

I/O1

NC

I/O5

I/O17

GND

I/O21

128K x 8

128K x 8

128K x 8

128K x 8

I/O2

I/O3

I/O4

I/O18

I/O19

I/O20

11

22

33

44

55

66

8

8

8

8

I/O 0 - 7

I/O 8 - 15

I/O 16 - 23

I/O 24 - 31

January 2001 Rev. 7

1

White Electronic Designs Corporation • [phone] • www.whiteedc.com

WS128K32-XXX

FIG. 2 PIN CONFIGURATION FOR WS128K32-XG4TX

TOP VIEW

PIN DESCRIPTION

CS1

GND

CS3

WE A6 A7 A8 A9 A10 VCC

NC A0

A1

A2

A3

A4

A5

I/O0-31

Data Inputs/Outputs

A0-16

Address Inputs

Write Enables

9 8

7

6

5

4

3

2

1 68 67 66 65 64 63 62 61

WE

Chip Selects

I/O0

10

60

I/O16

CS

1-4

I/O1

11

59

I/O17

OE

Output Enable

I/O2

12

58

I/O18

I/O3

13

57

I/O19

VCC

Power Supply

I/O4

14

56

I/O20

I/O5

15

55

I/O21

GND

Ground

I/O6

16

54

I/O22

NC

Not Connected

I/O7

17

53

I/O23

GND

18

52

GND

I/O8

19

51

I/O24

BLOCK DIAGRAM

I/O9

20

50

I/O25

I/O10

21

49

I/O26

I/O11

22

48

I/O27

CS1

CS2

CS3

CS4

WE

I/O12

23

47

I/O28

46

OE

I/O13

24

I/O29 A 0 - 1 6

I/O14

25

45

I/O30

I/O15

26

44

I/O31

128K x 8

128K x 8

128K x 8

128K x 8

27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43

VCC

A11

A12

A13

A14

A15

A16

CS2

OE

CS4

NC

NC

NC

NC

NC

NC

NC

8

8

8

8

I/O 0 - 7

I/O 8 - 15

I/O 16 - 23

I/O 24 - 31

FIG. 3 PIN CONFIGURATION FOR WS128K32-XG2TX

AND WS128K32-XG1UX

TOP VIEW

NC

A0

A1

A2

A3

A4

A5

CS3

GND

CS4

WE1

A6

A7

A8

A9

A10

VCC

9

8

7

6

5

4

3

2

1

68 67 66 65 64 63 62 61

I/O0

10

60

I/O16

I/O1

11

59

I/O17

I/O2

12

58

I/O18

I/O3

13

57

I/O19

I/O4

14

56

I/O20

I/O5

15

55

I/O21

I/O6

16

54

I/O22

I/O7

17

53

I/O23

GND

18

52

GND

I/O8

19

51

I/O24

I/O9

20

50

I/O25

I/O10

21

49

I/O26

I/O11

22

48

I/O27

I/O12

23

47

I/O28

I/O13

24

46

I/O29

I/O14

25

45

I/O30

I/O15

26

44

I/O31

27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43

VCC

A11

A12

A13

A14

A15

A16

CS1

OE

CS2

NC

WE2

WE3

WE4

NC

NC

NC

0.940"

The White 68 lead G2T/G1U CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2T/G1U has the TCE and lead inspection advantage of the CQFP form.

OE

A 0 - 1 6

PIN DESCRIPTION

		I/O0-31					Data Inputs/Outputs
		A0-16					Address Inputs
							Write Enables
		WE			1-4
							Chip Selects
		CS		1-4
							Output Enable
			OE
		VCC					Power Supply
		GND					Ground
			NC				Not Connected

BLOCK DIAGRAM

WE1CS1

WE2CS2

WE3CS3

WE4CS4

128K x 8

128K x 8

128K x 8

128K x 8

8	8	8	8
I/O 0 - 7	I/O 8 - 15	I/O 16 - 23	I/O 24 - 31

White Electronic Designs Corporation • [phone] • www.whiteedc.com

2

WS128K32-XXX

ABSOLUTE MAXIMUM RATINGS

Parameter	Symbol	Min	Max	Unit
Operating Temperature	TA	-55	+125	°C
Storage Temperature	TSTG	-65	+150	°C
Signal Voltage Relative to GND	VG	-0.5	Vcc+0.5	V
Junction Temperature	TJ		150	°C
Supply Voltage	VCC	-0.5	7.0	V

RECOMMENDED OPERATING CONDITIONS

Parameter	Symbol	Min	Max	Unit
Supply Voltage	VCC	4.5	5.5	V
Input High Voltage	VIH	2.2	VCC + 0.3	V
Input Low Voltage	VIL	-0.3	+0.8	V
Operating Temp. (Mil.)	TA	-55	+125	°C

TRUTH TABLE

CS

OE

WE

Mode

Data I/O

Power

H

X

X

Standby

High Z

Standby

L

L

H

Read

Data Out

Active

L

X

L

Write

Data In

Active

L

H

H

Out Disable

High Z

Active

CAPACITANCE

(TA = +25°C)

	Parameter					Symbol	Conditions		Max	Unit
					capacitance	COE	VIN = 0 V, f = 1.0 MHz	50		pF
	OE
					1-4 capacitance	CWE	VIN = 0 V, f = 1.0 MHz			pF
	WE
					HIP (PGA) H1			20
					CQFP G4			50
					CQFP G2T			20
					G1U				20
	CS1-4 capacitance					CCS	VIN = 0 V, f = 1.0 MHz	20		pF
	Data I/O capacitance					CI/O	VI/O = 0 V, f = 1.0 MHz	20		pF
	Address input capacitance					CAD	VIN = 0 V, f = 1.0 MHz	50		pF

This parameter is guaranteed by design but not tested.

DC CHARACTERISTICS

(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)

Parameter

Sym

Conditions

-15

-17

-20

-25

Units

Min

Max

Min Max

Min Max

Min

Max

Input Leakage Current

ILI

VCC = 5.5, VIN = GND to VCC

10

10

10

10

A

Output Leakage Current

ILO

= VIH,

= VIH, VOUT = GND to VCC

10

10

10

10

A

CS

OE

Operating Supply Current

ICC

= VIL,

= VIH, f = 5MHz, Vcc = 5.5

600

600

600

600

mA

CS

OE

Standby Current

ISB

= VIH, f = 5MHz, Vcc = 5.5

80

80

80

60

mA

CS

= VIH,

OE

Output Low Voltage

VOL

IOL = 8mA, VCC = 4.5

0.4

0.4

0.4

0.4

V

Output High Voltage

VOH

IOH = -4.0mA, VCC = 4.5

2.4

2.4

2.4

2.4

V

Parameter

Sym

Conditions

-35

-45

-55

Units

Min

Max

Min

Max

Min

Max

Input Leakage Current

ILI

VCC = 5.5, VIN = GND to VCC

10

10

10

A

Output Leakage Current

ILO

= VIH,

= VIH, VOUT = GND to VCC

10

10

10

A

CS

OE

Operating Supply Current

ICC

= VIL,

= VIH, f = 5MHz, Vcc = 5.5

600

600

600

mA

CS

OE

Standby Current

ISB

= VIH,

= VIH, f = 5MHz, Vcc = 5.5

60

60

60

mA

CS

OE

Output Low Voltage

VOL

IOL = 2.1mA, VCC = 4.5

0.4

0.4

0.4

V

Output High Voltage

VOH

IOH = -1.0mA, VCC = 4.5

2.4

2.4

2.4

V

NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V

LOWER POWER DATA RETENTION CHARACTERISTICS (L PRODUCT ONLY)

(TA = -55°C to +125°C), (TA = -40°C to +85°C)

Characteristic	Sym	Conditions		Min	Typ	Max	Units
Lower Power Data Retention Voltage	VCC	VCC = 2.0V		2	-	-	V
Lower Power Data Retention Quiescent Current	ICCDR	CS ≥ VCC -0.2V		-	1	4	mA
Chip Disable to Data Retention Time (1)	TCDR	VIN ≥ VCC -0.2V		0	-	-	ns
Operation Recovery Time (1)	TR	or VIN ≤ 0.2V		TRC		-	ns
NOTE: Parameter guaranteed, but not tested.
		3	White Electronic Designs Corporation • [phone] • www.whiteedc.com