White Electronic Designs WS128K32N-85H1Q, WS128K32N-85H1QA, WS128K32N-85H1MA, WS128K32N-85H1M, WS128K32N-85H1IA Datasheet

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White Electronic Designs WS128K32N-85H1Q, WS128K32N-85H1QA, WS128K32N-85H1MA, WS128K32N-85H1M, WS128K32N-85H1IA, WS128K32N-85H1I, WS128K32N-70H1CA, WS128K32N-70H1C, WS128K32N-70G4TQA, WS128K32N-70G4TQ, WS128K32N-70G4TMA, WS128K32N-70G4TM, WS128K32N-70G4TIA, WS128K32N-70G4TI, WS128K32N-70G4TCA, WS128K32N-85G2UQ, WS128K32N-85G2UQA, WS128K32N-85G2UMA, WS128K32N-85G2UM, WS128K32N-85G2UCA, WS128K32N-85G2UI, WS128K32N-85G2UC, WS128K32N-85G1UQA, WS128K32N-85G1UQ, WS128K32N-85G1UM, WS128K32N-85G1UMA, WS128K32N-85G1UIA, WS128K32N-85G1UI, WS128K32N-85G1UC, WS128K32N-85G1UCA, WS128K32N-70H1QA, WS128K32N-70H1Q, WS128K32N-70H1M, WS128K32N-70H1MA, WS128K32N-70H1I, WS128K32N-85H1CA, WS128K32N-85H1C, WS128K32N-85G4TQA, WS128K32N-85G4TQ, WS128K32N-85G4TMA, WS128K32N-85G4TM, WS128K32N-85G4TIA, WS128K32N-85G4TI, WS128K32N-85G4TCA, WS128K32N-85G4TC, WS128K32N-70G2UQA, WS128K32N-70G2UQ, WS128K32N-70G2UMA, WS128K32N-70G2UM, WS128K32N-70G2UI, WS128K32N-70G2UCA, WS128K32N-70G2UC, WS128K32N-70G1UQA, WS128K32N-70G1UQ, WS128K32N-70G1UM, WS128K32N-70G1UMA, WS128K32N-70G1UIA, WS128K32N-70G1UI, WS128K32N-70G1UCA, WS128K32N-120H1Q, WS128K32N-120H1QA, WS128K32N-120G4TIA, WS128K32N-120G4TI, WS128K32N-120G4TCA, WS128K32N-120G4TC, WS128K32N-120G2UQA, WS128K32N-120G2UQ, WS128K32N-120G2UMA, WS128K32N-120G2UM, WS128K32N-120G2UIA, WS128K32N-120G2UI, WS128K32N-120H1MA, WS128K32N-120H1M, WS128K32N-120H1IA, WS128K32N-120H1I, WS128K32N-120H1CA, WS128K32N-120H1C, WS128K32N-120G4TQA, WS128K32N-120G4TQ, WS128K32N-120G4TMA, WS128K32N-120G4TM, WS128K32N-120G2UCA, WS128K32N-120G2UC, WS128K32N-120G1UQA, WS128K32N-120G1UQ, WS128K32N-120G1UMA, WS128K32N-120G1UM, WS128K32N-120G1UIA, WS128K32N-120G1UI, WS128K32N-120G1UCA, WS128K32N-120G1UC, WS128K32N-100G4TMA, WS128K32N-100G4TM, WS128K32N-100G4TIA, WS128K32N-100G4TCA, WS128K32N-100G4TC, WS128K32N-100G2UQA, WS128K32N-100G2UQ, WS128K32N-100G2UMA, WS128K32N-100G2UIA, WS128K32N-100G2UM, WS128K32N-100G2UI, WS128K32N-100G2UCA, WS128K32N-100G2UC, WS128K32N-100G1UQA, WS128K32N-100G1UQ, WS128K32N-100G1UMA, WS128K32N-100G1UM, WS128K32N-100G1UIA, WS128K32N-100G1UCA, WS128K32N-100H1QA, WS128K32N-100G1UC, WS128K32N-100H1Q, WS128K32N-100H1MA, WS128K32N-100H1M, WS128K32N-100H1I, WS128K32N-100H1IA, WS128K32N-100H1CA, WS128K32N-100H1C, WS128K32N-100G4TQA, WS128K32N-100G4TQ Datasheet

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WS128K32-XXX

128Kx32 SRAM MODULE, SMD 5962-93187

FEATURES

νAccess Times of 70, 85, 100, 120ns

νMIL-STD-883 Compliant Devices Available

νPackaging

•66-pin, PGA Type, 1.075 inch square, Hermetic Ceramic HIP (Package 400).

•68 lead, 40mm Low Profile CQFP, 3.56mm (0.140")(Package 502).

•68 lead, Hermetic CQFP (G2U), 22.4mm

(0.880 inch) square, 4.57mm (0.140 inch) high, (Package 510)

•68 lead, Hermetic CQFP (G1U), 23.9mm

(0.940 inch) square, 4.57mm (0.140inch) high, (Package 519)

νOrganized as 128Kx32; User Configurable as 256Kx16 or 512Kx8

νCommercial, Industrial and Military Temperature Ranges

ν5 Volt Power Supply

νLow Power CMOS

νTTL Compatible Inputs and Outputs

νBuilt in Decoupling Caps and Multiple Ground Pins for Low Noise Operation

νWeight

WS128K32-XG1U - 5 grams typical WS128K32-XG2UX - 8 grams typical WS128K32-XH1X - 13 grams typical WS128K32-XG4TX - 20 grams typical

ν All devices are upgradeable to 512Kx32

FIG. 1 PIN CONFIGURATION FOR WS128K32N-XH1X
		TOP VIEW					PINDESCRIPTION
1	12	23		34	45	56	I/O0-31	Data Inputs/Outputs
1	12	23		34	45	56
							A0-16	Address Inputs
I/O8	WE2	I/O15	I/O24		VCC	I/O31	WE1-4	Write Enables
							WE1-4	Write Enables
I/O9	CS2	I/O14	I/O25		CS4	I/O30	CS1-4	Chip Selects
I/O10	GND	I/O13	I/O26		WE4	I/O29	OE	Output Enable
I/O10	GND	I/O13	I/O26		WE4	I/O29
							VCC	Power Supply
A14	I/O11	I/O12	A7		I/O27	I/O28	GND	Ground
							GND	Ground
A16	A10	OE	A12		A4	A1	NC	Not Connected
A11	A9	NC	NC		A5	A2	BLOCKDIAGRAM
							BLOCKDIAGRAM
A0	A15	WE1	A13		A6	A3
NC	VCC	I/O7	A8		WE3	I/O23
I/O0	CS1	I/O6	I/O16		CS3	I/O22
I/O1	NC	I/O5	I/O17		GND	I/O21
I/O2	I/O3	I/O4	I/O18		I/O19	I/O20
11	22	33		44	55	66

SRAM MODULES

September2001Rev.3

White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

White Electronic Designs WS128K32N-85H1Q, WS128K32N-85H1QA, WS128K32N-85H1MA, WS128K32N-85H1M, WS128K32N-85H1IA Datasheet

WS128K32-XXX

SRAM MODULES

FIG. 2 PIN CONFIGURATION FOR WS128K32-XG4TX

TOP VIEW

PINDESCRIPTION

I/O0-31

Data Inputs/Outputs

A0-16

Address Inputs

Write Enable

1-4

Chip Selects

Output Enable

VCC

Power Supply

GND

Ground

Not Connected

BLOCKDIAGRAM

A 0 - 1 6

128K x 8

I/O 0 - 7

I/O 8 - 15

I/O 16 - 23

I/O 24 - 31

FIG. 3 PIN CONFIGURATION FOR WS128K32-XG1UX

AND WS128K32-XG2UX

TOP VIEW

PINDESCRIPTION

I/O0-31

Data Inputs/Outputs

A0-16

Address Inputs

Write Enable

1-4

Chip Selects

Output Enable

VCC

Power Supply

GND

Ground

Not Connected

BLOCKDIAGRAM

White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

WS128K32-XXX

ABSOLUTE MAXIMUM RATINGS

Parameter	Symbol	Min	Max	Unit

Operating Temperature	TA	-55	+125	°C

Storage Temperature	TSTG	-65	+150	°C

Signal Voltage Relative to GND	VG	-0.5	Vcc+0.5	V

Junction Temperature	TJ		150	°C

Supply Voltage	VCC	-0.5	7.0	V

RECOMMENDEDOPERATINGCONDITIONS

Parameter	Symbol	Min	Max	Unit

Supply Voltage	VCC	4.5	5.5	V

Input High Voltage	VIH	2.2	VCC + 0.3	V

Input Low Voltage	VIL	-0.5	+0.8	V

TRUTHTABLE

Mode

Data I/O

Power

Standby

High Z

Standby

Read

Data Out

Active

Out Disable

High Z

Active

Write

Data In

Active

CAPACITANCE

(TA = +25°C)

Parameter			Symbol	Conditions	Max	Unit

		capacitance	COE	VIN = 0 V, f = 1.0 MHz	50	pF
OE		capacitance	COE	VIN = 0 V, f = 1.0 MHz	50	pF
			CWE	VIN = 0 V, f = 1.0 MHz		pF
WE1-4 capacitance			CWE	VIN = 0 V, f = 1.0 MHz		pF
		HIP (PGA)			20
		CQFP G4T			50
		CQFP G1U			20
		CQFP G2U			15
			CCS	VIN = 0 V, f = 1.0 MHz	20	pF
	CS1-4 capacitance		CCS	VIN = 0 V, f = 1.0 MHz	20	pF
Data I/O capacitance			CI/O	VI/O = 0 V, f = 1.0 MHz	20	pF
Address input capacitance			CAD	VIN = 0 V, f = 1.0 MHz	50	pF

This parameter is guaranteed by design but not tested.

DCCHARACTERISTICS

(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)

Parameter	Sym					Conditions				-70		-85		-100			-120		Units
									Min		Max	Min Max		Min Max		Min		Max
Input Leakage Current	ILI		VCC = 5.5, VIN = GND to VCC								10		10		10			10	µA
Output Leakage Current	ILO										10		10		10			10	µA
Output Leakage Current	ILO		CS		= VIH, OE = VIH, VOUT = GND to VCC						10		10		10			10	µA
Operating Supply Current	I C C			= VIL,				= VIH, f = 5MHz, Vcc = 5.5			120		120		120			120	mA
Operating Supply Current	I C C	CS		= VIL,		OE		= VIH, f = 5MHz, Vcc = 5.5			120		120		120			120	mA
Standby Current	ISB							= VIH, f = 5MHz, Vcc = 5.5			20		20		20			20	mA
Standby Current	ISB	CS		= VIH,			OE	= VIH, f = 5MHz, Vcc = 5.5			20		20		20			20	mA
Output Low Voltage	VOL	IOL = 2.1mA, Vcc = 4.5									0.4		0.4		0.4			0.4	V
Output High Voltage	VOH	IOH = -1.0mA, Vcc = 4.5							2.4			2.4		2.4		2.4			V

NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V

SRAM MODULES

DATARETENTIONCHARACTERISTICS

(TA = -55°C to +125°C)

Parameter	Symbol	Conditions		-70		-85		-100		-120		Units
				Min	Max	Min	Max	Min	Max	Min	Max
Data Retention			³VCC -0.2V
Supply Voltage	VDR	CS	³VCC -0.2V	2.0	5.5	2.0	5.5	2.0	5.5	2.0	5.5	V
Data Retention		VCC = 3V			4		4		4		4	mA
Current	ICCDR1	VCC = 3V			4		4		4		4	mA

3White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

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