White Electronic Designs EDI8L32128V20AI, EDI8L32128V20AC, EDI8L32128V15AI, EDI8L32128V15AC, EDI8L32128V12AI Datasheet

Features

128Kx32 bit CMOS Static

Analog SHARCTM External Memory Solution

•ADSP-21060L

•ADSP-21062L Random Access Memory Array

•Fast Access Times: 12,15 and 20ns

•User Configurable Organization with Minimal Additional Logic

•Master Output Enable and Write Control

•TTL Compatible Inputs and Outputs

•Fully Static, No Clocks

Surface Mount Package

•68 Lead PLCC, No. 99 (JEDEC MO-47AE)

•Small Footprint, 0.990 Sq. In.

•Multiple Ground Pins for Maximum

Noise Immunity

Single 3.3V (±5%) Supply Operation

Pin Configurations and Block Diagram

				DQ16 NC NC E3\ E2\ E1\ EØ\ NC VCC NC NC G\ W\ A16 A15 A14 DQ15
	9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
DQ17	10																																																																							60	DQ14
																																																																								59	DQ13
DQ18	11
																																																																								58	DQ12
DQ19	12
																																																																								57	VSS
VSS	13
																																																																								56	DQ11
DQ20	14
																																																																								55	DQ10
DQ21	15
																																																																								54	DQ9
DQ22	16
																																																																								53	DQ8
DQ23	17
																																																																								52	VCC
VCC	18
																																																																								51	DQ7
DQ24	19
																																																																								50	DQ6
DQ25	20
																																																																								49	DQ5
DQ26	21
																																																																								48	DQ4
DQ27	22
																																																																								47	VSS
VSS	23
																																																																								46	DQ3
DQ28	24
																																																																								45	DQ2
DQ29	25
																																																																								44	DQ1
DQ30	26
	27					28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
			DQ31				A6 A5 A4 A3 A2 A1 AØ VCC A13 A12 A11 A10 A9 A8 A7 DQØ

Note: Pin 2 & 67 on the 64Kx32 (EDI8L3265C) and the 256Kx32 (EDI8L32256C) are word select pins.

EDI8L32128V

128Kx32 SRAM 3.3 Volt

128Kx32 CMOS High Speed

Static RAM

The EDI8L32128V is a high speed, 3.3 volt, four megabit density Static RAM. The device is available with access times of 12, 15 and 20ns, allowing the device to support 60MHz DSPs with no wait states. The high speed, 3.3V supply voltage and byte configurability make the device ideal for interfacing with Analog Devices ADSP-21062L or ADSP-21060L SHARC DSPs.

The device can be configured as a 128Kx32 and used to create a single chip external data memory solution for the SHARC (figure 1). Providing a 51% space savings when compared to four 128Kx8, 400mil wide plastic SOJs. the EDI8L32128V has a 10pf load on the data lines vs. 24pf for four plastic SOJs. Memory upgrades in the same footprint can be accomplished with the EDI8L32256V (256Kx32) or theEDI8L32512V(512KX32). Thisiscoveredindetailinthe application report "The EDI's x32 MCM-L SRAM Family: Integrated Memory Solution for the Analog SHARC DSP" Alternatively the device's chip enables can configure it as a 256Kx16. A 256Kx48 program memory array for the SHARC is created using three devices (figure 2). If this memory is too deep, two 128Kx24's (EDI8L24128V) can be used to create a 128Kx48 memory array.

Note: Solder Reflow temperature should not exceed 260°C for 10 seconds

Pin Names

AØ-A16					Address Inputs
EØ-E3					Chip Enables (One per Byte)
W					Master Write Enable
G					Master Output Enable
DQØ-DQ31					Common Data Input/Output
VCC					Power (+3.3V±10%)
VSS					Ground
NC					No Connection
AØ-A16
				17
		G			128Kx32
		W
	EØ				Memory			DQØ-DQ7
					Array
		E1						DQ8-DQ15
		E2						DQ16-DQ23
		E3						DQ24-DQ31

Electronic Designs Incorporated

• One Research Drive • Westborough, MA 01581 USA • 508-366-5151 • FAX [phone] • http://www.electronic-designs.com

1

EDI8L32128V Rev. 1 4/97 ECO #8366

Absolute Maximum Ratings*

	Voltage on any pin relative to VSS	-0.5V to 4.6V
	Operating Temperature TA (Ambient)
	Commercial	0°C to + 70°C
	Industrial	-40°C to +85°C
	Storage Temperature	-55°C to +125°C
	Power Dissipation	3 Watts
	Output Current.	20 mA
	Junction Temperature, TJ	175°C

*Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

DC Electrical Characteristics

Recommended DC Operating Conditions

	Parameter	Sym	Min	Typ	Max Units
	Supply Voltage	VCC	3.135V	3.3	3.465V	V
	Supply Voltage	VSS	0	0	0	V
	Input High Voltage	VIH	2.2	--	VCC+0.3	V
	Input Low Voltage	VIL	-0.3	--	0.8	V

AC Test Conditions

Input Pulse Levels

VSS to 3.0V

Input Rise and Fall Times

5ns

Input and Output Timing Levels

1.5V

Output Load

Figure 1

(note: For TEHQZ,TGHQZ and TWLQZ, CL = 5pF) (see figure 2)

Figure 1

Figure 2

Z0 = 50 Ω

VCC

Q

319 Ω

65 pF

Dout

RL= 50Ω

353 Ω

5 pF

VL= 1.5V

Parameter

Sym

Conditions

Min

Max

Units

12

15

20

ns

Operating Power Supply Current

ICC1

680

660

620

mA

W= VIL, II/O = 0mA,

Min Cycle

Standby (TTL) Supply Current

ICC2

E

• VIH, VINVIL or

120

120

120

mA

VIN • VIH, f=ØMHz

Full Standby CMOS

ICC3

• VCC-0.2V

40

40

40

mA

E

Supply Current

VIN • VCC-0.2V or

VIN - 0.2V

Input Leakage Current

ILI

VIN = 0V to VCC

±10

µA

Output Leakage Current

ILO

V I/O = 0V to VCC

±10

µA

Output High Volltage

VOH

IOH = -4.0mA

2.4

V

Output Low Voltage

VOL

IOL = 8.0mA

0.4

V

Typical: TA = 25°C, VCC = 3.3V

Truth Table

G

E

W

Mode

Output

Power

X

H

X

Standby

High Z

ICC2,ICC3

H

L

H

Output Deselect

High Z

ICC1

L

L

H

Read

DOUT

ICC1

X

L

L

Write

DIN

ICC1

Capacitance

(f=1.0MHz, VIN=VCC or VSS)

	Parameter	Sym						Max	Unit
	Address Lines	CA						40	pF
	Data Lines	CD/Q						10	pF
	Write & Output Enable Lines							40	pF
		W, G
	Chip Enable Lines		-					8	pF
		EØ			E3

These parameters are sampled, not 100% tested.

EDI8L32128V

128Kx32 SRAM 3.3 Volt

2

EDI8L32128V Rev. 1 4/97 ECO #8366