White Electronic Designs WS128K32NV-35H1IA, WS128K32NV-35H1I, WS128K32NV-35H1CA, WS128K32NV-35H1C, WS128K32NV-35G2TMA Datasheet

WS128K32V-XXX

128Kx32 3.3V SRAM MULTICHIP PACKAGE PRELIMINARY*

FEATURES

■Access Times of 15**, 17, 20, 25, 35ns

■Low Voltage Operation

■Packaging

•66-pin, PGA Type, 1.075 inch square Hermetic Ceramic HIP (Package 400)

•68 lead, Hermetic CQFP (G2T), 22.4mm (0.880 inch) square (Package 509), 4.57mm (0.180 inch) high. Designed to fit JEDEC 68 lead 0.990" CQFJ footprint (Fig. 2)

•68 lead, Hermetic CQFP (G1U), 23.8mm (0.940 inch) square (Package 509), 3.56mm (0.140 inch) high.

■Organized as 128Kx32; User Configurable as 256Kx16 or 512Kx8

■Commercial, Industrial and Military Temperature Ranges

■3.3 Volt Power Supply

■Low Power CMOS

■TTL Compatible Inputs and Outputs

■Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation

■Weight

WS128K32V-XG2TX - 8 grams typical WS128K32V-XG1UX - 5 grams typical WS128K32V-XH1X - 13 grams typical

*This data sheet describes a product that is not fully qualified or characterized and is subject ot change without notice.

**Commercial and Industrial temperature ranges only.

FIG. 1 PIN CONFIGURATION FOR WS128K32NV-XH1X
		TOP VIEW								PIN DESCRIPTION
1	12	23		34	45		56			I/O0-31	Data Inputs/Outputs
I/O8	WE2	I/O15	I/O24		VCC	I/O31				A0-16	Address Inputs
I/O9	CS2	I/O14	I/O25		CS4	I/O30				WE1-4	Write Enables
										CS1-4	Chip Selects
I/O10	GND	I/O13	I/O26		WE4	I/O29				OE	Output Enable
A13	I/O11	I/O12	A6		I/O27	I/O28				VCC	Power Supply
A14	A10	OE	A7		A3	A0				GND	Ground
A15	A11	NC	NC		A4	A1				NC	Not Connected
A16	A12	WE1	A8		A5	A2		BLOCK DIAGRAM
NC	VCC	I/O7	A9		WE3	I/O23	WE1CS1	WE2CS2	WE3CS3	WE4CS4
							OE
							A 0 - 1 6
I/O0	CS1	I/O6	I/O16		CS3	I/O22
							128K x 8	128K x 8	128K x 8	128K x 8
I/O1	NC	I/O5	I/O17		GND	I/O21
I/O2	I/O3	I/O4	I/O18		I/O19	I/O20	8	8	8	8
11	22	33		44	55		66
							I/O 0 - 7	I/O 8 - 15	I/O 16 - 23	I/O 24 - 31

4

MODULES SRAM

April 2001 Rev. 2

1

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WS128K32V-XXX

4

MODULES SRAM

FIG. 2 PIN CONFIGURATION FOR WS128K32V-XG2TX AND WS128K32V-XG1UX

TOP VIEW

PIN DESCRIPTION

NC

A0

A1

A2

A3

A4

A5

CS3

GND

CS4 WE1 A6

A7

A8

A9

A10

VCC

I/O0-31

Data Inputs/Outputs

9

8

7

6

5

4

3

2

1

68 67 66 65 64 63 62 61

A0-16

Address Inputs

1-4

Write Enables

I/O0

10

60

I/O16

WE

I/O1

11

59

I/O17

I/O2

12

58

I/O18

CS1-4

Chip Selects

I/O3

13

57

I/O19

OE

Output Enable

I/O4

14

56

I/O20

VCC

Power Supply

I/O5

15

55

I/O21

I/O6

16

54

I/O22

GND

Ground

I/O7

17

53

I/O23

GND

18

52

GND

NC

Not Connected

I/O8

19

51

I/O24

I/O9

20

50

I/O25

I/O10

21

49

I/O26

I/O11

22

48

I/O27

I/O12

23

47

I/O28

BLOCK DIAGRAM

I/O13

24

46

I/O29

I/O14

25

45

I/O30

WE1CS1

WE2CS2

WE3CS3

WE4CS4

I/O15

26

44

I/O31

OE

27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43

A 0 - 1 6

VCC

A11

A12

A13

A14

A15

A16

CS1

OE

CS2 NC

WE2

WE3

WE4

NC

NC

NC

128K x 8

128K x 8

128K x 8

128K x 8

8

8

8

8

I/O 0 - 7

I/O 8 - 15

I/O 16 - 23

I/O 24 - 31

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2

WS128K32V-XXX

ABSOLUTE MAXIMUM RATINGS

Parameter	Symbol	Min	Max	Unit
Operating Temperature	TA	-55	+125	°C
Storage Temperature	TSTG	-65	+150	°C
Signal Voltage Relative to GND	VG	-0.5	4.6	V
Junction Temperature	TJ		150	°C
Supply Voltage	VCC	-0.5	5.5	V

RECOMMENDED OPERATING CONDITIONS

Parameter	Symbol	Min	Max	Unit
Supply Voltage	VCC	3.0	3.6	V
Input High Voltage	VIH	2.2	VCC + 0.3	V
Input Low Voltage	VIL	-0.3	+0.8	V

TRUTH TABLE

CS

OE

WE

Mode

Data I/O

Power

H

X

X

Standby

High Z

Standby

L

L

H

Read

Data Out

Active

L

X

L

Write

Data In

Active

L

H

H

Out Disable

High Z

Active

CAPACITANCE

(TA = +25°C)

	Parameter					Symbol	Conditions	Max	Unit
					capacitance	COE	VIN = 0 V, f = 1.0 MHz	50	pF
	OE
					1-4 capacitance	CWE	VIN = 0 V, f = 1.0 MHz		pF
	WE
					HIP (PGA)			20
					CQFP G2T/G1U			20
			1-4 capacitance			CCS	VIN = 0 V, f = 1.0 MHz	20	pF
		CS
	Data I/O capacitance					CI/O	VI/O = 0 V, f = 1.0 MHz	20	pF
	Address input capacitance					CAD	VIN = 0 V, f = 1.0 MHz	50	pF

This parameter is guaranteed by design but not tested.

DC CHARACTERISTICS

(VCC = 3.3V ±0.3V, VSS = 0V, TA = -55°C to +125°C)

Parameter

Sym

Conditions

Min

Max

Units

Input Leakage Current

ILI

VIN = GND to VCC

10

A

Output Leakage Current

ILO

= VIH,

= VIH, VOUT = GND to VCC

10

A

CS

OE

Operating Supply Current (x 32 Mode)

ICC x 32

= VIL,

= VIH, f = 5MHz

500

mA

CS

OE

Standby Current

ISB

= VIH,

= VIH, f = 5MHz

32

mA

CS

OE

Output Low Voltage

VOL

IOL = 8mA

0.4

V

Output High Voltage

VOH

IOH = -4.0mA

2.4

V

4

MODULES SRAM

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