White Electronic Designs WS512K32NV-17G1UC, WS512K32NV-15H1MA, WS512K32NV-15H1M, WS512K32NV-15H1IA, WS512K32NV-15H1I Datasheet

WS512K32V-XXX

HI-RELIABILITY PRODUCT

512Kx32 SRAM 3.3V MODULE PRELIMINARY*

FEATURES

■Access Times of 15, 17, 20ns

■Low Voltage Operation

■Packaging

•66-pin, PGA Type, 1.075 inch square, Hermetic Ceramic HIP (Package 400)

•68 lead, 22.4mm (0.88") CQFP, 4.6mm (0.180") high, (Package 509)

•68 lead, 23.9mm (0.940" sq.) Low Profile CQFP (G1U), 3.56mm (0.140") high, (Package 519)

■Organized as 512Kx32; User Configurable as 1Mx16 or 2Mx8

■Commercial, Industrial and Military Temperature Ranges

■Low Power CMOS

■TTL Compatible Inputs and Outputs

■Fully Static Operation:

• No clock or refresh required.

■Three State Output.

■Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation

■Weight

WS512K32V-XG2TX - 8 grams typical WS512K32V-XG1UX - 5 grams typical WS512K32NV-XH1X - 13 grams typical

■Low Voltage Operation:

• 3.3V ± 10% Power Supply

*This data sheet describes a product under development, not fully characterized, and is subject to change without notice.

PIN CONFIGURATION FOR WS512K32NV-XH1X

TOP VIEW

PIN DESCRIPTION

1

12

23

34

45

56

I/O0-31

Data Inputs/Outputs

I/O8

WE2

I/O15

I/O24

VCC

I/O31

A0-18

Address Inputs

I/O9

CS2

I/O14

I/O25

CS4

I/O30

WE1-4

Write Enables

CS1-4

Chip Selects

I/O10

GND

I/O13

I/O26

WE4

I/O29

OE

Output Enable

A13

I/O11

I/O12

A6

I/O27

I/O28

VCC

Power Supply

A14

A10

OE

A7

A3

A0

GND

Ground

NC

Not Connected

A15

A11

A18

NC

A4

A1

A16

A12

WE1

A8

A5

A2

BLOCK DIAGRAM

WE1CS1

WE2CS2

WE3CS3

WE4CS4

A17

VCC

I/O7

A9

WE3

I/O23

OE

A 0 - 1 8

I/O0

CS1

I/O6

I/O16

CS3

I/O22

512K x 8

512K x 8

512K x 8

512K x 8

I/O1

NC

I/O5

I/O17

GND

I/O21

I/O2

I/O3

I/O4

I/O18

I/O19

I/O20

8

8

8

8

11

22

33

44

55

66

I/O 0 - 7

I/O 8 - 15

I/O 16 - 23

I/O 24 - 31

May 2001 Rev. 6

1

White Electronic Designs Corporation • [phone] • www.whiteedc.com

WS512K32V-XXX

PIN CONFIGURATION FOR WS512K32V-XG2TX AND WS512K32V-XG1UX

TOP VIEW

PIN DESCRIPTION

NC

A0

A1

A2

A3

A4

A5

CS3

GND

CS4 WE1 A6

A7

A8

A9

A10

VCC

I/O0-31

Data Inputs/Outputs

9

8

7

6

5

4

3

2

1

68 67 66 65 64 63 62 61

A0-18

Address Inputs

I/O0

10

60

1-4

Write Enables

I/O16

WE

I/O1

11

59

I/O17

1-4

Chip Selects

I/O2

12

58

I/O18

CS

I/O3

13

57

I/O19

OE

Output Enable

I/O4

14

56

I/O20

Vcc

Power Supply

I/O5

15

55

I/O21

I/O6

16

54

I/O22

GND

Ground

I/O7

17

53

I/O23

GND

18

52

GND

NC

Not Connected

I/O8

19

51

I/O24

I/O9

20

50

I/O25

I/O10

21

49

I/O26

I/O11

22

48

I/O27

I/O12

23

47

I/O28

BLOCK DIAGRAM

I/O13

24

46

I/O29

I/O14

25

45

I/O30

I/O15

26

44

WE1CS1

WE2CS2

WE3CS3

WE4CS4

I/O31

27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43

OE

VCC

A11

A12

A13

A14

A15

A16

CS1

OE

CS2 A17

WE2

WE3

WE4

A18

NC

NC

A 0 - 1 8

512K x 8

512K x 8

512K x 8

512K x 8

8

8

8

8

I/O 0 - 7

I/O 8 - 15

I/O 16 - 23

I/O 24 - 31

White Electronic Designs Corporation • [phone] • www.whiteedc.com

2

WS512K32V-XXX

ABSOLUTE MAXIMUM RATINGS

Parameter	Symbol	Min	Max	Unit
Operating Temperature	TA	-55	+125	°C
Storage Temperature	TSTG	-65	+150	°C
Signal Voltage Relative to GND	VG	-0.5	4.6	V
Junction Temperature	TJ		150	°C
Supply Voltage	VCC	-0.5	4.6	V

RECOMMENDED OPERATING CONDITIONS

Parameter	Symbol	Min	Max	Unit
Supply Voltage	VCC	3.0	3.6	V
Input High Voltage	VIH	2.2	VCC + 0.3	V
Input Low Voltage	VIL	-0.3	+0.8	V

TRUTH TABLE

CS

OE

WE

Mode

Data I/O

Power

H

X

X

Standby

High Z

Standby

L

L

H

Read

Data Out

Active

L

X

L

Write

Data In

Active

L

H

H

Out Disable

High Z

Active

CAPACITANCE

(TA = +25°C)

	Parameter					Symbol	Conditions	Max	Unit
					capacitance	COE	VIN = 0 V, f = 1.0 MHz	50	pF
	OE
					1-4 capacitance	CWE	VIN = 0 V, f = 1.0 MHz		pF
	WE
					HIP (PGA)			20
					CQFP G2T/G1U			20
			1-4 capacitance			CCS	VIN = 0 V, f = 1.0 MHz	20	pF
		CS
	Data I/O capacitance					CI/O	VI/O = 0 V, f = 1.0 MHz	20	pF
	Address input capacitance					CAD	VIN = 0 V, f = 1.0 MHz	50	pF

This parameter is guaranteed by design but not tested.

DC CHARACTERISTICS

(VCC = 3.3V ± 0.3V, TA = -55°C to +125°C)

Parameter

Sym

Conditions

Min

Max

Units

Input Leakage Current

ILI

VIN = GND to VCC

10

A

Output Leakage Current

ILO

= VIH,

= VIH, VOUT = GND to VCC

10

A

CS

OE

Operating Supply Current (x 32 Mode)

ICC x 32

= VIL,

= VIH, f = 5MHz, VCC = 3.6V

400

mA

CS

OE

Standby Current

ISB

= VIH,

= VIH, f = 5MHz, VCC = 3.6V

200

mA

CS

OE

Output Low Voltage

VOL

IOL = 4.0mA

0.4

V

Output High Voltage

VOH

IOH = -4.0mA

2.4

V

NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V.

NOTE: Contact factory for low power option.

3	White Electronic Designs Corporation • [phone] • www.whiteedc.com