White Electronic Designs EDI88256LP70CM, EDI88256LP70CI, EDI88256LP70CC, EDI88256LP70CB, EDI88256C70CM Datasheet

EDI88257C

HI-RELIABILITY PRODUCT

256Kx8 Monolithic SRAM

FEATURES

■256Kx8 CMOS Static

■Random Access Memory

•Access Times of 70, 85, 100ns

•Data Retention Function (LP Versions)

•TTL Compatible Inputs and Outputs

•Fully Static, No Clocks

■JEDEC Approved Pinout

•32 pin Ceramic DIP, 0.6 mils wide (Package 9)

■Single +5V (±10%) Supply Operation

The EDI88257C is a 2 Megabit 256Kx8 bit Monolithic CMOS Static RAM.

The 32 pin DIP pinout adheres to the JEDEC standard for the two megabit device, and is a pin replacement for the 256Kx8 module, EDI88257C. The device is upgradeable to the 512Kx8 SRAM, the EDI88512C. Pin 1 becomes the higher order address.

A Low Power version, EDI88257LP, offers a data retention function for battery back-up opperation. Military product is available compliant to Appendix A of MIL-PRF-38535.

FIG. 1	PIN CONFIGURATION							PIN DESCRIPTION
		32 DIP
								A0-17	Address Inputs
		TOP VIEW
								W	Write Enable
NC	1	32	VCC					E	Chip Enable
A16	2	31	A15
A14	3	30	A17					G	Output Enable
A12	4	29	W					DQ0-7	Data Inputs/Outputs
A7	5	28	A13
A6	6	27	A8					VCC	Power (+5V ±10%)
A5	7	26	A9					VSS	Ground
A4	8	25	A11
A3	9	24	G		BLOCK DIAGRAM			NC	Not Connected
A2	10	23	A10
A1	11	22	E
AØ	12	21	DQ7			Memory Array
DQØ	13	20	DQ6
DQ1	14	19	DQ5
DQ2	15	18	DQ4
VSS	16	17	DQ3
				AØ-17	Address	Address	I/O	DQØ-7
					Buffer	Decoder	Circuits
				W
				E
				G

September 1999 Rev. 2

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White Electronic Designs Corporation • [phone] • www.whiteedc.com

EDI88257C

ABSOLUTE MAXIMUM RATINGS

Parameter		Unit
Voltage on any pin relative to Vss	-0.5 to 7.0	V
Operating Temperature TA (Ambient)
Industrial	-40 to +85	°C
Military	-55 to +125	°C
Storage Temperature, Ceramic	-65 to +150	°C
Power Dissipation	1	W
Output Current	20	mA
Junction Temperature, TJ	175	°C

NOTE:

Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

TRUTH TABLE

G

E

W

Mode

Output

Power

X

H

X

Standby

High Z

Icc2, Icc3

H

L

H

Output Deselect

High Z

Icc1

L

L

H

Read

Data Out

Icc1

X

L

L

Write

Data In

Icc1

RECOMMENDED OPERATING CONDITIONS

Parameter	Symbol	Min	Typ	Max	Unit
Supply Voltage	VCC	4.5	5.0	5.5	V
Supply Voltage	VSS	0	0	0	V
Input High Voltage	VIH	2.2	—	Vcc +0.5	V
Input Low Voltage	VIL	-0.3	—	+0.8	V

CAPACITANCE

Parameter	Symbol	Condition	Max	Unit
Address Lines	CI	VIN = Vcc or Vss, f = 1.0MHz	30	pF
Data Lines	CD/Q	VOUT = Vcc or Vss, f = 1.0MHz	14	pF

These parameters are sampled, not 100% tested.

DC CHARACTERISTICS

(VCC = 5V, TA = +25°C)

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Input Leakage Current

ILI

VIN = 0V to VCC

—

—

±10

A

Output Leakage Current

ILO

VI/O = 0V to VCC

—

—

±10

A

Operating Power Supply Current

ICC1

= VIL, II/O = 0mA, Min Cycle

(70-100ns)

—

45

75

mA

W,

E

Standby (TTL) Power Supply Current

ICC2

≥ VIH, VIN ≤ VIL, VIN ≥ VIH

—

3

10

mA

E

≥ VCC -0.2V

C

—

—

5

mA

Full Standby Power Supply Current

ICC3

E

VIN ≥ Vcc -0.2V or VIN ≤ 0.2V

LP

—

—

1

mA

Output Low Voltage

VOL

IOL = 2.1mA

—

—

0.4

V

Output High Voltage

VOH

IOH = -1.0mA

2.4

—

—

V

AC TEST CONDITIONS

Figure 1	Vcc	Figure 2	Vcc
	480Ω		480Ω
Q		Q
255Ω	30pF	255Ω	5pF

Input Pulse Levels	VSS to 3.0V
Input Rise and Fall Times	5ns
Input and Output Timing Levels	1.5V
Output Load	Figure 1

NOTE: For tEHQZ, tGHQZ and tWLQZ, CL = 5pF Figure 2)

White Electronic Designs Corporation • [phone] • www.whiteedc.com

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