White Electronic Designs WS512K8-55CMA, WS512K8-55CM, WS512K8-45CQA, WS512K8-45CQ, WS512K8-45CMA Datasheet

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White Electronic Designs WS512K8-55CMA, WS512K8-55CM, WS512K8-45CQA, WS512K8-45CQ, WS512K8-45CMA Datasheet

WS512K8-XCX

HI-RELIABILITY PRODUCT

512Kx8 SRAM MODULE, SMD 5962-92078

FIG. 1

PIN CONFIGURATION

TOP VIEW

A18

 

 

1

32

 

 

VCC

 

 

 

 

A16

 

 

2

31

 

 

A15

 

 

 

A14

 

 

3

30

 

 

A17

 

 

 

A12

 

 

4

29

 

 

 

 

 

 

 

 

 

WE

 

A7

 

 

5

28

 

 

A13

 

 

 

A6

 

 

6

27

 

 

A8

 

 

 

A5

 

 

7

26

 

 

A9

 

 

 

A4

 

 

8

25

 

 

A11

 

 

 

A3

 

 

9

24

 

 

 

 

 

 

 

 

 

OE

A2

 

 

10

23

 

 

A10

 

 

 

A1

 

 

11

22

 

 

 

 

 

 

 

 

CS

 

 

 

A0

 

 

12

21

 

 

I/O7

 

 

 

I/O0

 

 

13

20

 

 

I/O6

 

 

 

I/O1

 

 

14

19

 

 

I/O5

 

 

 

I/O2

 

 

15

18

 

 

I/O4

 

 

GND

 

 

16

17

 

 

I/O3

 

 

 

 

 

 

 

 

 

 

 

 

 

PIN DESCRIPTION

A0-18

Address Inputs

 

 

 

 

 

 

 

I/O0-7

Data Input/Output

 

 

 

 

 

 

 

 

 

 

 

Chip Select

 

 

 

CS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Enable

OE

 

 

Write Enable

 

WE

 

VCC

+5.0V Power

 

 

 

 

 

 

 

GND

Ground

 

 

 

 

 

 

 

BLOCK DIAGRAM

A 0 - 1 6

I / O 0 - 7

WE

OE

FEATURES

Access Times 20, 25, 35, 45ns

Standard Microcircuit Drawing, 5962-92078

MIL-STD-883 Compliant Devices Available

Rad Tolerant Devices Available

JEDEC Standard 32 pin, Hermetic Ceramic DIP (Package 300)

Commercial, Industrial andMilitary Temperature Range (-55°C to +125°C)

Organized as 512K x 8

5 Volt Power Supply

Low Power CMOS

TTL Compatible Inputs and Outputs

Battery Back-Up Operation

128K x 8

 

128K x 8

 

128K x 8

 

128K x 8

 

 

 

 

 

 

 

A 1 7

Decoder

A 1 8

CS

May 1999 Rev. 2

1

White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520

WS512K8-XCX

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Min

Max

Unit

Operating Temperature

TA

-55

+125

°C

Storage Temperature

TSTG

-65

+150

°C

Signal Voltage Relative to GND

VG

-0.5

Vcc+0.5

V

Junction Temperature

TJ

 

150

°C

Supply Voltage

VCC

-0.5

7.0

V

 

 

 

 

 

RECOMMENDED OPERATING CONDITIONS

Parameter

Symbol

Min

Max

Unit

 

 

 

 

 

Supply Voltage

VCC

4.5

5.5

V

Input High Voltage

VIH

2.2

VCC + 0.3

V

 

 

 

 

 

Input Low Voltage

VIL

-0.5

+0.8

V

 

 

 

 

 

Operating Temp. (Mil.)

TA

-55

+125

°C

 

 

 

 

 

TRUTH TABLE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CS

OE

 

 

WE

 

Mode

Data I/O

Power

 

H

 

X

 

 

X

 

Standby

High Z

Standby

 

 

 

 

 

 

 

 

 

 

 

 

L

 

L

 

 

H

 

Read

Data Out

Active

 

 

L

 

X

 

 

L

 

Write

Data In

Active

 

L

 

H

 

 

H

 

Out Disable

High Z

Active

CAPACITANCE

(TA = +25°C)

Parameter

Symbol

Condition

Max

Unit

 

 

 

 

 

Input capacitance

CIN

VIN = 0V, f = 1.0MHz

45

pF

Output capicitance

COUT

VOUT = 0V, f = 1.0MHz

45

pF

 

 

 

 

 

This parameter is guaranteed by design but not tested.

DC CHARACTERISTICS

(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)

Parameter

Symbol

 

 

 

 

 

 

 

 

 

 

Conditions

-20

 

 

-25

-35

 

-45

Units

 

 

 

 

 

 

 

 

 

 

 

 

 

Min

Max

Min

 

Max

Min Max

Min

 

Max

 

Input Leakage Current

ILI

 

VCC = 5.5, VIN = GND to VCC

 

 

10

 

 

10

 

10

 

 

10

µA

Output Leakage Current

ILO

 

 

= VIH,

 

= VIH, VOUT = GND to VCC

 

 

10

 

 

10

 

10

 

 

10

µA

 

CS

OE

 

 

 

 

 

 

 

Operating Supply Current

ICC

 

 

 

 

= VIL,

 

 

 

 

 

= VIH, f = 5MHz, Vcc = 5.5

 

 

210

 

 

210

 

210

 

 

210

mA

CS

OE

 

 

 

 

 

 

 

Standby Current

ISB

 

 

 

= VIH,

 

 

= VIH, f = 5MHz

 

 

80

 

 

60

 

60

 

 

55

mA

 

CS

OE

 

 

 

 

 

 

 

Output Low Voltage

VOL

 

IOL = 8mA, Vcc = 4.5

 

 

0.4

 

 

0.4

 

0.4

 

 

0.4

V

Output High Voltage

VOH

 

IOH = -4.0mA, Vcc = 4.5

2.4

 

 

2.4

 

 

2.4

 

2.4

 

 

V

NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V

DATA RETENTION CHARACTERISTICS

(TA = -55°C to +125°C)

Parameter

Symbol

 

Conditions

 

-20

 

 

-25

 

 

-35

 

 

-45

 

Units

 

 

 

 

 

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

 

Data Retention Supply Voltage

VDR

 

CS

≥ VCC -0.2V

2.0

 

5.5

2.0

 

5.5

2.0

 

5.5

2.0

 

5.5

V

Data Retention Current

ICCDR1

 

 

VCC = 3V

 

8.0

12.8

 

8.0

12.8

 

8.0

12.8

 

8.0

12.8

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FIG. 2

 

AC TEST CIRCUIT

I OL

 

Current Source

 

D.U.T.

VZ 1.5V

Ceff = 50 pf

(Bipolar Supply)

 

IOH

Current Source

AC TEST CONDITIONS

Parameter

Typ

Unit

 

 

 

Input Pulse Levels

VIL = 0, VIH = 3.0

V

 

 

 

Input Rise and Fall

5

ns

 

 

 

Input and Output Reference Level

1.5

V

 

 

 

Output Timing Reference Level

1.5

V

 

 

 

NOTES:

VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 Ω.

VZ is typically the midpoint of VOH and VOL.

IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance.

White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520

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