WS512K8-XCX
HI-RELIABILITY PRODUCT
512Kx8 SRAM MODULE, SMD 5962-92078
FIG. 1
PIN CONFIGURATION
TOP VIEW
A18 |
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1 |
32 |
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VCC |
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A16 |
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2 |
31 |
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A15 |
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A14 |
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3 |
30 |
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A17 |
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A12 |
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4 |
29 |
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WE |
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A7 |
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5 |
28 |
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A13 |
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A6 |
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6 |
27 |
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A8 |
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A5 |
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7 |
26 |
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A9 |
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A4 |
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8 |
25 |
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A11 |
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A3 |
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9 |
24 |
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OE |
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A2 |
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10 |
23 |
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A10 |
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A1 |
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11 |
22 |
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CS |
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A0 |
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12 |
21 |
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I/O7 |
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I/O0 |
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13 |
20 |
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I/O6 |
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I/O1 |
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14 |
19 |
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I/O5 |
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I/O2 |
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15 |
18 |
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I/O4 |
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GND |
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16 |
17 |
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I/O3 |
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PIN DESCRIPTION
A0-18 |
Address Inputs |
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I/O0-7 |
Data Input/Output |
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Chip Select |
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CS |
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Output Enable |
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OE |
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Write Enable |
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WE |
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VCC |
+5.0V Power |
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GND |
Ground |
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BLOCK DIAGRAM
A 0 - 1 6
I / O 0 - 7
WE
OE
FEATURES
■Access Times 20, 25, 35, 45ns
■Standard Microcircuit Drawing, 5962-92078
■MIL-STD-883 Compliant Devices Available
■Rad Tolerant Devices Available
■JEDEC Standard 32 pin, Hermetic Ceramic DIP (Package 300)
■Commercial, Industrial andMilitary Temperature Range (-55°C to +125°C)
■Organized as 512K x 8
■5 Volt Power Supply
■Low Power CMOS
■TTL Compatible Inputs and Outputs
■Battery Back-Up Operation
128K x 8 |
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128K x 8 |
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128K x 8 |
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128K x 8 |
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A 1 7
Decoder
A 1 8
CS
May 1999 Rev. 2 |
1 |
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 |
WS512K8-XCX
ABSOLUTE MAXIMUM RATINGS
Parameter |
Symbol |
Min |
Max |
Unit |
Operating Temperature |
TA |
-55 |
+125 |
°C |
Storage Temperature |
TSTG |
-65 |
+150 |
°C |
Signal Voltage Relative to GND |
VG |
-0.5 |
Vcc+0.5 |
V |
Junction Temperature |
TJ |
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150 |
°C |
Supply Voltage |
VCC |
-0.5 |
7.0 |
V |
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RECOMMENDED OPERATING CONDITIONS
Parameter |
Symbol |
Min |
Max |
Unit |
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Supply Voltage |
VCC |
4.5 |
5.5 |
V |
Input High Voltage |
VIH |
2.2 |
VCC + 0.3 |
V |
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Input Low Voltage |
VIL |
-0.5 |
+0.8 |
V |
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Operating Temp. (Mil.) |
TA |
-55 |
+125 |
°C |
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TRUTH TABLE
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CS |
OE |
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WE |
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Mode |
Data I/O |
Power |
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H |
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X |
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X |
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Standby |
High Z |
Standby |
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L |
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L |
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H |
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Read |
Data Out |
Active |
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L |
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X |
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L |
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Write |
Data In |
Active |
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L |
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H |
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H |
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Out Disable |
High Z |
Active |
CAPACITANCE
(TA = +25°C)
Parameter |
Symbol |
Condition |
Max |
Unit |
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Input capacitance |
CIN |
VIN = 0V, f = 1.0MHz |
45 |
pF |
Output capicitance |
COUT |
VOUT = 0V, f = 1.0MHz |
45 |
pF |
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This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)
Parameter |
Symbol |
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Conditions |
-20 |
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-25 |
-35 |
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-45 |
Units |
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Min |
Max |
Min |
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Max |
Min Max |
Min |
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Max |
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Input Leakage Current |
ILI |
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VCC = 5.5, VIN = GND to VCC |
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10 |
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10 |
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10 |
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10 |
µA |
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Output Leakage Current |
ILO |
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= VIH, |
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= VIH, VOUT = GND to VCC |
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10 |
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10 |
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10 |
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10 |
µA |
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CS |
OE |
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Operating Supply Current |
ICC |
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= VIL, |
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= VIH, f = 5MHz, Vcc = 5.5 |
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210 |
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210 |
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210 |
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210 |
mA |
CS |
OE |
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Standby Current |
ISB |
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= VIH, |
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= VIH, f = 5MHz |
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80 |
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60 |
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60 |
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55 |
mA |
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CS |
OE |
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Output Low Voltage |
VOL |
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IOL = 8mA, Vcc = 4.5 |
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0.4 |
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0.4 |
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0.4 |
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0.4 |
V |
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Output High Voltage |
VOH |
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IOH = -4.0mA, Vcc = 4.5 |
2.4 |
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2.4 |
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2.4 |
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2.4 |
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V |
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
DATA RETENTION CHARACTERISTICS
(TA = -55°C to +125°C)
Parameter |
Symbol |
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Conditions |
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-20 |
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-25 |
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-35 |
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-45 |
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Units |
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Min |
Typ |
Max |
Min |
Typ |
Max |
Min |
Typ |
Max |
Min |
Typ |
Max |
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Data Retention Supply Voltage |
VDR |
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CS |
≥ VCC -0.2V |
2.0 |
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5.5 |
2.0 |
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5.5 |
2.0 |
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5.5 |
2.0 |
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5.5 |
V |
Data Retention Current |
ICCDR1 |
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VCC = 3V |
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8.0 |
12.8 |
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8.0 |
12.8 |
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8.0 |
12.8 |
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8.0 |
12.8 |
mA |
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FIG. 2 |
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AC TEST CIRCUIT |
I OL |
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Current Source |
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D.U.T. |
VZ ≈1.5V |
Ceff = 50 pf |
(Bipolar Supply) |
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IOH
Current Source
AC TEST CONDITIONS
Parameter |
Typ |
Unit |
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Input Pulse Levels |
VIL = 0, VIH = 3.0 |
V |
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Input Rise and Fall |
5 |
ns |
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Input and Output Reference Level |
1.5 |
V |
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Output Timing Reference Level |
1.5 |
V |
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NOTES:
VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance.
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 |
2 |