White Electronic Designs WS256K32L-35G4CA, WS256K32L-35G4C, WS256K32L-25HMA, WS256K32L-25HM, WS256K32L-25HIA Datasheet

256Kx32 SRAM MODULE PRELIMINARY*

FEATURES

■Access Times 20, 25, 35ns

■MIL-STD-883 Compliant Devices Available

■Packaging

•66 pin, PGA Type, 1.185 inch square, Hermetic Ceramic HIP (Package 401)

•68 lead, 40mm, Hermetic CQFP (Package 501)

■Organized as 256Kx32, User Configurable as 512Kx16

■Upgradable to 512Kx32 for future expansion

■Data I/O Compatible with 3.3V devices

WS256K32-XXX

HI-RELIABILITY PRODUCT

■2V Data Retention devices available (WS256K32L-XXX low power version only)

■Commercial, Industrial and Military Temperature Range

■5 Volt Power Supply

■Low Power CMOS

■TTL Compatible Inputs and Outputs

■Weight

WS256K32N-XHX - 13 grams typical WS256K32-XG4X - 20 grams typical

*This data sheet describes a product under development, not fully characterized, and is subject to change without notice.

FIG. 1 PIN CONFIGURATION FOR WS256K32N-XHX
		TOP VIEW							PIN DESCRIPTION
1	12	23		34	45		56		I/O0-31	Data Inputs/Outputs
I/O8	NC	I/O15	I/O24		VCC	I/O31			A0-17	Address Inputs
I/O9	NC	I/O14	I/O25		NC	I/O30			WE1-2 Write Enables
									CS1-2	Chip Selects
I/O10	GND	I/O13	I/O26		NC	I/O29			OE	Output Enable
A13	I/O11	I/O12	A6		I/O27	I/O28	BLOCK DIAGRAM		VCC	Power Supply
A14	A10	OE	A7		A3	A0			GND	Ground
							WE1CS1	WE2CS2
									NC	Not Connected
A15	A11	NC	NC		A4	A1	OE
							A 0 - 1 7
A16	A12	WE1	A8		A5	A2
A17	VCC	I/O7	A9		WE2	I/O23	256K x 16	256K x 16
I/O0	CS1	I/O6	I/O16		CS2	I/O22
I/O1	NC	I/O5	I/O17		GND	I/O21	16	16
I/O2	I/O3	I/O4	I/O18		I/O19	I/O20	I/O 0 - 1 5	I/O 16 - 31
11	22	33		44	55		66

October 2000 Rev. 2

1

White Electronic Designs Corporation • [phone] • www.whiteedc.com

WS256K32-XXX

FIG. 2 PIN CONFIGURATION FOR WS256K32-XG4X
						TOP VIEW																														PIN DESCRIPTION
								CS1	GND		CS2	WE A6 A7 A8 A9 A10 VCC
	NC	A0	A1	A2	A3	A4	A5																													I/O0-31					Data Inputs/Outputs
																																					A0-17				Address Inputs
	9	8	7	6	5	4	3	2	1	68 67 66 65 64 63 62 61																											WE				Write Enable
																																									Chip Selects
I/O0	10												60		I/O16																						CS		1-2
I/O1	11												59		I/O17
																																						OE			Output Enable
I/O2	12												58		I/O18
I/O3	13												57		I/O19			BLOCK DIAGRAM																			VCC				Power Supply
I/O4	14												56		I/O20
I/O5	15												55		I/O21																						GND				Ground
I/O6	16												54		I/O22
																							CS1								CS2							NC			Not Connected
I/O7	17												53		I/O23
																	WE
GND	18												52		GND
I/O8	19												51		I/O24		OE
I/O9	20												50		I/O25	A 0 - 1 7
I/O10	21												49		I/O26
I/O11	22												48		I/O27					256K x 16								256K x 16
I/O12	23												47		I/O28
I/O13	24												46		I/O29
I/O14	25												45		I/O30
I/O15	26												44		I/O31
	27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43															16												16

VCC

A11

A12

A13

A14

A15

A16

NC

OE

NC

A17

NC

NC

NC

NC

NC

NC

I/O 0 - 1 5

I/O 16 - 31

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2

WS256K32-XXX

ABSOLUTE MAXIMUM RATINGS

Parameter	Symbol	Min	Max	Unit
Operating Temperature	TA	-55	+125	°C
Storage Temperature	TSTG	-65	+150	°C
Signal Voltage Relative to GND	VG	-0.5	Vcc+0.5	V
Junction Temperature	TJ		150	°C
Supply Voltage	VCC	-0.5	7.0	V

RECOMMENDED OPERATING CONDITIONS

Parameter	Symbol	Min	Max	Unit
Supply Voltage	VCC	4.5	5.5	V
Input High Voltage	VIH	2.2	VCC + 0.3	V
Input Low Voltage	VIL	-0.5	+0.8	V
Operating Temp (Mil)	TA	-55	+125	°C

TRUTH TABLE

CS

OE

WE

Mode

Data I/O

Power

H

X

X

Standby

High Z

Standby

L

L

H

Read

Data Out

Active

L

H

H

Out Disable

High Z

Active

L

X

L

Write

Data In

Active

CAPACITANCE

(TA = +25°C)

	Parameter					Symbol	Conditions	Max	Unit
					capacitance	COE	VIN = 0 V, f = 1.0 MHz	28	pF
	OE
					1-2 capacitance	CWE	VIN = 0 V, f = 1.0 MHz		pF
	WE
					HIP (PGA)			20
					CQFP G4			28
			1-2 capacitance			CCS	VIN = 0 V, f = 1.0 MHz	20	pF
		CS
	Data I/O capacitance					CI/O	VI/O = 0 V, f = 1.0 MHz	20	pF
	Address input capacitance					CAD	VIN = 0 V, f = 1.0 MHz	28	pF

This parameter is guaranteed by design but not tested.

DC CHARACTERISTICS

(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)

Parameter

Symbol

Conditions

Min

Max

Units

Input Leakage Current

ILI

VCC = 5.5, VIN = GND to VCC

10

A

Output Leakage Current

ILO

= VIH,

= VIH, VOUT = GND to VCC

10

A

CS

OE

Operating Supply Current x 32 Mode

ICC x 32

= VIL,

= VIH, f = 5MHz, Vcc = 5.5

550

mA

CS

OE

Standby Current

ISB

= VIH,

= VIH, f = 5MHz, Vcc = 5.5

34

mA

CS

OE

Output Low Voltage

VOL

IOL = 8mA, Vcc = 4.5

0.4

V

Output High Voltage

VOH

IOH = -4.0mA, Vcc = 4.5

2.4

V

NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V

LOW POWER DATA RETENTION CHARACTERISTICS

(WS256K32L-XXX ONLY)

(TA = -55°C to +125°C)

Parameter	Symbol		Conditions					Units
					Min	Typ	Max
Data Retention Supply Voltage	VDR		CS	≥ VCC -0.2V	2.0		5.5	V
Data Retention Current	ICCDR3			VCC = 3V		1.0	16	mA

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