White Electronic Designs EDI8L32256C17AI, EDI8L32256C17AC, EDI8L32256C15AC, EDI8L32256C25AI, EDI8L32256C25AC Datasheet

Features

256Kx32 bit CMOS Static DSP Memory Solution

•Texas Instruments TMS320C3x, TMS320C4x

•Analog SHARCTM DSP

•Motorola DSP96002

Random Access Memory Array

•Fast Access Times: 15, 17, 20 and 25ns

•Individual Byte Enables

•User Configurable Organization with Minimal Additional Logic

•Master Output Enable and Write Control

•TTL Compatible Inputs and Outputs

•Fully Static, No Clocks

Surface Mount Package

•68 Lead PLCC, No. 99, JEDEC MO-47AE

•Small Footprint, 0.990 Sq. In.

•Multiple Ground Pins for Maximum

Noise Immunity

Single +5V (±5%) Supply Operation

Pin Configurations and Block Diagram

						DQ16 NC A17 BS3\ BS2\ BS1\ BSØ\ E1\ VCC NC EØ\ G\ W\ A16 A15 A14 DQ15
	9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
DQ17	10																																																																							60	DQ14
																																																																								59	DQ13
DQ18	11
																																																																								58	DQ12
DQ19	12
																																																																								57	VSS
VSS	13
																																																																								56	DQ11
DQ20	14
																																																																								55	DQ10
DQ21	15
																																																																								54	DQ9
DQ22	16
																																																																								53	DQ8
DQ23	17
																																																																								52	VCC
VCC	18
																																																																								51	DQ7
DQ24	19
																																																																								50	DQ6
DQ25	20
																																																																								49	DQ5
DQ26	21
																																																																								48	DQ4
DQ27	22
																																																																								47	VSS
VSS	23
																																																																								46	DQ3
DQ28	24
																																																																								45	DQ2
DQ29	25
																																																																								44	DQ1
DQ30	26
	27							28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
			DQ31					A6 A5 A4 A3 A2 A1 AØ VCC A13 A12 A11 A10 A9 A8 A7 DQØ

Note: For memory upgrade information refer to page 8, Figure 8 "EDI MCM-L upgrade path".

EDI8L32256C

256Kx32 SRAM Module

256Kx32, 5V Static Ram

The EDI8L32256C is a high speed, 5V, 8 megabit SRAM. The device is available with access times of 15, 17, 20 and 25ns, allowing the creation of a no wait state DSP memory solution.

The device can be configured as a 256Kx32 and used to create a single chip external data memory solution for Texas Instruments' TMS320C30/31, TMS 320C32 or TMS320C4x, Motorola's DSP96002 and Analog Device's SHARCTM DSP.

Alternatively the device's chip enables can be used to configure it as a 512Kx16. A 512Kx48 program memory array for Analog's SHARCTM DSP is created using three devices. If this memory is too deep, two 256Kx24s (EDI8L24256C) can be used to create a 256Kx48 array or two 128Kx24s (EDI8L24128C) can be used to create a 128Kx48 array.

The device provides a 32% space savings when compared to two monolithic 256Kx16, 44 pin SOJs.

The device provides a memory upgrade of the EDI8L32128C (128Kx32) and the EDI8L3265C (64Kx32). For more memory the device can be upgraded to the EDI8L32512C (512Kx32).

NOTE: Solder Reflow temperature should not exceed 260°C for 10 seconds.

Pin Names

AØ-A17

Address Inputs

EØ-E1

Chip Enables (One per Word)

BSØ-

BS3

Byte Selects (One per Byte)

W

Master Write Enable

G

Master Output Enable

DQØ-DQ31

Common Data Input/Output

VCC

Power (+5V±5%)

VSS

Ground

NC

No Connection

AØ-A17

18

G

W

256Kx32

EØ

E1

Memory

BSØ

Array

DQØ-DQ7

BS1

DQ8-DQ15

BS2

DQ16-DQ23

BS3

DQ24-DQ31

Electronic Designs Incorporated

• One Research Drive • Westborough, MA 01581USA • 508-366-5151 • FAX [phone] • http://www.electronic-designs.com

1

EDI8L32256C Rev. 4 3/98 ECO#9662

Absolute Maximum Ratings*

	Voltage on any pin relative to VSS	-0.5V to 7.0V
	Operating Temperature TA (Ambient)
	Commercial	0°C to + 70°C
	Industrial	-40°C to +85°C
	Storage Temperature	-55°C to +125°C
	Power Dissipation	3.1 Watts
	Output Current.	20 mA
	Junction Temperature, TJ	175°C

*Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Recommended DC Operating Conditions

	Parameter	Sym	Min	Typ	Max Units
	Supply Voltage	VCC	4.75	5.0	5.25	V
	Supply Voltage	VSS	0	0	0	V
	Input High Voltage	VIH	2.2	--	VCC+0.5	V
	Input Low Voltage	VIL	-0.3	--	0.8	V

AC Test Conditions

Input Pulse Levels			VSS to 3.0V
Input Rise and Fall Times			5ns
Input and Output Timing Levels			1.5V
Output Load			Figure 1
(note: For TEHQZ,TGHQZ and TWLQZ, CL = 5pF)
Figure 1		Figure 2
	VCC		VCC
	480		480
Q		Q
255	30 pF	255	5 pF

DC Electrical Characteristics

Parameter

Sym

Conditions

Min

Max

Units

15/17

20/25

Operating Power Supply Current

ICC1

575

480

mA

W= VIL, II/O = 0mA,

Min Cycle

Standby (TTL) Supply Current

ICC2

³ VIH, VIN £ VIL or

120

120

mA

E

VIN ³ VIH, f=ØMHz

Full StandbySupply Current

ICC3

³ VCC-0.2V

20

20

mA

E

VIN ³ VCC-0.2V or

VIN £ 0.2V

Input Leakage Current

ILI

VIN = 0V to VCC

±10

µA

Output Leakage Current

ILO

V I/O = 0V to VCC

±10

µA

Output High Volltage

VOH

IOH = -4.0mA

2.4

V

Output Low Voltage

VOL

IOL = 8.0mA

0.4

V

Truth Table

E

W

G

BSØ-3

Mode

Output

Power

H

X

X

X

Standby

High Z

ICC2,ICC3,

L

H

H

X

Output Disable

High Z

ICC1

L

X

X

H

Output Disable

High Z

ICC1

L

H

L

L

Read

DOUT

ICC1

L

L

X

L

Write

DIN

ICC1

X Means Don't Care

Capacitance

(f=1.0MHz, VIN=VCC or VSS)

	Parameter	Sym					Max	Unit
	Address Lines	CA					20	pF
	Data Lines	CD/Q					10	pF
	Write & Output Enable Lines						6	pF
		W,			G
	Chip Enable Lines/Byte Select						9	pF
		E, BS

EDI8L32256C

256Kx32 SRAM Module

2

EDI8L32256C Rev. 4 3/98 ECO#9662