White Electronic Designs WMS512K8V-20FMA, WMS512K8V-20FM, WMS512K8V-20FIA, WMS512K8V-20FI, WMS512K8V-20FEMA Datasheet

512Kx8 MONOLITHIC SRAM

FEATURES

■Access Times 15, 17, 20ns

■Revolutionary, Center Power/Ground Pinout JEDEC Approved

•36 lead Ceramic SOJ (Package 100)

•36 lead Ceramic Flat Pack (Package 226)

■Evolutionary, Corner Power/Ground Pinout JEDEC Approved

•32 pin Ceramic DIP (Package 300)

•32 lead Ceramic SOJ (Package 101)**

•32 lead Ceramic Flat Pack (Package 220)**

■32 pin, Rectangular Ceramic Leadless Chip Carrier (Package 601)

WMS512K8V-XXX

HI-RELIABILITY PRODUCT

PRELIMINARY*

■Low Power CMOS

■Low Voltage Operation:

•3.3V ± 10% Power Supply

■Commercial, Industrial and Military Temperature Range

■TTL Compatible Inputs and Outputs

■Fully Static Operation:

•No clock or refresh required.

■Three State Output.

*This data sheet describes a product that is not fully qualified or characterized and is subject to change without notice.

**Package under developement.

	REVOLUTIONARY PINOUT		EVOLUTIONARY PINOUT
	36	FLAT PACK	32	DIP
			32	CSOJ (DE)**
	36	CSOJ			32 CLCC
			32 FLAT PACK (FE)**
	TOP VIEW		TOP VIEW		TOP VIEW

	A0			1	36		NC			A18			1	32		VCC
	A1			2	35		A18			A16			2	31		A15
	A2			3	34		A17			A14			3	30		A17
	A3			4	33		A16			A12			4	29
																WE
	A4			5	32		A15			A7			5	28		A13
	CS			6	31			OE		A6			6	27		A8
I/O0				7	30		I/O7			A5			7	26		A9
I/O1				8	29		I/O6			A4			8	25		A11
VCC				9	28		GND			A3
													9	24		OE
GND				10	27		VCC			A2			10	23		A10
I/O2				11	26		I/O5			A1
													11	22		CS
I/O3				12	25		I/O4			A0			12	21		I/O7
WE				13	24		A14
										I/O0			13	20		I/O6
	A5			14	23		A13			I/O1			14	19		I/O5
	A6			15	22		A12			I/O2			15	18		I/O4
	A7			16	21		A11
	A8			17	20		A10			GND			16	17		I/O3
	A9			18	19		NC

	A12	A14	A16	A18	VCC	A15	A17
	4	3	2	1	32 31 30
A7	5						29
								WE
A6	6						28	A13
A5	7						27	A8
A4	8						26	A9
A3	9						25	A11
A2	10						24
								OE
A1	11						23	A10
A0	12						22
									CS
I/O0	13						21	I/O7
	14 15 16 17 18 19 20
	I/O1	I/O2	VSS	I/O3	I/O4	I/O5	I/O6

								PIN DESCRIPTION
		A0-18								Address Inputs
		I/O0-7								Data Input/Output
										Chip Select
				CS
										Output Enable
				OE
										Write Enable
			WE
		VCC								Power Supply
		GND								Ground
April 2001 Rev. 6								1		White Electronic Designs Corporation • [phone] • www.whiteedc.com

WMS512K8V-XXX

ABSOLUTE MAXIMUM RATINGS

Parameter	Symbol	Min	Max	Unit
Operating Temperature	TA	-55	+125	°C
Storage Temperature	TSTG	-65	+150	°C
Signal Voltage Relative to GND	VG	-0.5	4.6	V
Junction Temperature	TJ		150	°C
Supply Voltage	VCC	-0.5	4.6	V

RECOMMENDED OPERATING CONDITIONS

Parameter	Symbol	Min	Max	Unit
Supply Voltage	VCC	3.0	3.6	V
Input High Voltage	VIH	2.2	VCC + 0.3	V
Input Low Voltage	VIL	-0.3	+0.8	V
Operating Temp. (Ind.)	TA	-40	+85	°C

TRUTH TABLE

CS

OE

WE

Mode

Data I/O

Power

H

X

X

Standby

High Z

Standby

L

L

H

Read

Data Out

Active

L

X

L

Write

Data In

Active

L

H

H

Out Disable

High Z

Active

CAPACITANCE

(TA = +25°C)

Parameter	Symbol	Condition	Max	Unit
Input capacitance	CIN	VIN = 0V, f = 1.0MHz	12	pF
Output capacitance	COUT	VOUT = 0V, f = 1.0MHz	12	pF

This parameter is guaranteed by design but not tested.

DC CHARACTERISTICS

(VCC = 3.3V, GND = 0V, TA = -55°C to +125°C)

Parameter

Sym

Conditions

Min

Max

Units

Input Leakage Current

ILI

VCC = 3.6, VIN = GND to VCC

10

A

Output Leakage Current

ILO

= VIH,

= VIH, VOUT = GND to VCC

10

A

CS

OE

Operating Supply Current

ICC

= VIL,

= VIH, f = 5MHz, Vcc = 3.6

100

mA

CS

OE

Standby Current

ISB

= VIH,

= VIH, f = 5MHz, Vcc = 3.6

50

mA

CS

OE

Output Low Voltage

VOL

IOL = 4.0mA

0.4

V

Output High Voltage

VOH

IOH = -4.0mA

2.4

V

NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V

NOTE: Contact factory for low power option.

White Electronic Designs Corporation • [phone] • www.whiteedc.com

2

WMS512K8V-XXX

AC CHARACTERISTICS

(VCC = 3.3V, GND = 0V, TA = -55°C to +125°C)

Parameter	Symbol		-15			-17			-20		Units
Read Cycle		Min		Max	Min		Max	Min		Max
Read Cycle Time	tRC	15			17			20			ns
Address Access Time	tAA			15			17			20	ns
Output Hold from Address Change	tOH	0			0			0			ns
Chip Select Access Time	tACS			15			17			20	ns
Output Enable to Output Valid	tOE			8			8			10	ns
Chip Select to Output in Low Z	tCLZ1	1			1			1			ns
Output Enable to Output in Low Z	tOLZ1	0			0			0			ns
Chip Disable to Output in High Z	tCHZ1			8			8			10	ns
Output Disable to Output in High Z	tOHZ1			8			8			10	ns

1. This parameter is guaranteed by design but not tested.

AC CHARACTERISTICS

(VCC = 3.3V, GND = 0V, TA = -55°C to +125°C)

Parameter	Symbol		-15			-17			-20		Units
Write Cycle		Min		Max	Min		Max	Min		Max
Write Cycle Time	tWC	15			17			20			ns
Chip Select to End of Write	tCW	12			12			14			ns
Address Valid to End of Write	tAW	12			12			14			ns
Data Valid to End of Write	tDW	9			9			10			ns
Write Pulse Width	tWP	12			14			14			ns
Address Setup Time	tAS	0			0			0			ns
Address Hold Time	tAH	0			0			0			ns
Output Active from End of Write	tOW1	2			3			3			ns
Write Enable to Output in High Z	tWHZ1			8			8			9	ns
Data Hold Time	tDH	0			0			0			ns

1. This parameter is guaranteed by design but not tested.

AC TEST CIRCUIT

	I OL
	Current Source
D.U.T.	VZ ≈1.5V
Ceff = 50 pf	(Bipolar Supply)

IOH

Current Source

AC TEST CONDITIONS

Parameter	Typ	Unit
Input Pulse Levels	VIL = 0, VIH = 2.5	V
Input Rise and Fall	5	ns
Input and Output Reference Level	1.5	V
Output Timing Reference Level	1.5	V

NOTES:

VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 Ω.

VZ is typically the midpoint of VOH and VOL.

IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance.

3	White Electronic Designs Corporation • [phone] • www.whiteedc.com