White Electronic Designs WMS1M1-35DEMA, WMS1M1-35DEM, WMS1M1-35DEIA, WMS1M1-35DEI, WMS1M1-35DECA Datasheet

WMS1M1-XDEX

1Mx1 SRAM MONOLITHIC ADVANCED*

PIN CONFIGURATION

TOP VIEW

A10					1	32		VCC
A11					2	31		NC
A12					3	30		A9
	NC				4	29		A8
A13					5	28		A7
A14					6	27		A6
A15					7	26		A5
	NC				8	25		A4
A16					9	24		A3
A17					10	23		NC
A18					11	22		A2
A19					12	21		NC
	NC				13	20		A1
	Q				14	19		A0
					15	18		D
	WE
GND					16	17
									CS

PIN DESCRIPTION

A0-19					Address Inputs
D,Q					Data Input, Data Output
					Chip Select
		CS
	WE				Write Enable
VCC					Power Supply
GND					Ground
	NC				Not Connected

FEATURES

■Access Times 20, 25, 35ns

■MIL-STD-883 Compliant Devices Available

■Packaging

•32 lead, Ceramic SOJ (Package 101)

■Commercial, Industrial and Military Temperature Ranges

■Organized as 1M x 1

■5 Volt Power Supply

■Low Power CMOS

■TTL Compatible Inputs and Outputs

■2V Data Retention Devices also Available for Battery Back-Up Operation

*This data sheet describes a product that may or may not be under development and is subject to change or cancellation without notice.

2

MONOLITHICS SRAM

May 1997

1

White Microelectronics • Phoenix, AZ • [phone]

WMS1M1-XDEX

2

MONOLITHICS SRAM

ABSOLUTE MAXIMUM RATINGS

Parameter	Symbol	Min	Max	Unit
Operating Temperature	TA	-55	+125	°C
Storage Temperature	TSTG	-65	+150	°C
Signal Voltage Relative to GND	VG	-0.5	Vcc+0.5	V
Junction Temperature	TJ		150	°C
Supply Voltage	VCC	-0.5	7.0	V

RECOMMENDED OPERATING CONDITIONS

Parameter	Symbol	Min	Max	Unit
Supply Voltage	VCC	4.5	5.5	V
Input High Voltage	VIH	2.2	VCC + 0.3	V
Input Low Voltage	VIL	-0.5	+0.8	V
Operating Temp. (Mil.)	TA	-55	+125	°C

TRUTH TABLE

CS				WE		Mode	I/O Pin	Cycle	Current
	H			X		Not Selected	High-Z	—	ISB1, ISB2
	L			H		Read	DOUT	Read	ICCA
	L			L		Write	High-Z	Write	ICCA

H = High, L = Low, X = Don't Care

CAPACITANCE

(TA = +25°C)

Parameter	Symbol	Condition	Max	Unit
Input capacitance	CIN	VIN = 0V, f = 1.0MHz	15	pF
Output capicitance	COUT	VOUT = 0V, f = 1.0MHz	15	pF

This parameter is guaranteed by design but not tested.

DC CHARACTERISTICS

(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)

Parameter

Sym

Conditions

Min

Max

Units

Input Leakage Current

ILI

VCC = 5.5, VIN = GND to VCC

10

μA

Output Leakage Current

ILO

= VIH,

= VIH, VOUT = GND to VCC

10

μA

CS

OE

Operating Supply Current

ICC

= VIL,

= VIH, f = 5MHz, Vcc = 5.5

105

mA

CS

OE

Standby Current

ISB

= VIH,

= VIH, f = 5MHz

30

mA

CS

OE

Output Low Voltage

VOL

IOL = 8mA, VCC = 4.5

0.4

V

Output High Voltage

VOH

IOH = -4.0mA, VCC = 4.5

2.4

V

NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V

	AC TEST CIRCUIT			AC TEST CONDITIONS
		I OL
				Parameter	Typ	Unit
	Current Source			Input Pulse Levels	VIL = 0, VIH = 3.0	V
				Input Rise and Fall	5	ns
				Input and Output Reference Level	1.5	V
			VZ ≈1.5V
	D.U.T.			Output Timing Reference Level	1.5	V
	Ceff = 50 pf		(Bipolar Supply)	NOTES:
				VZ is programmable from -2V to +7V.
				IOL & IOH programmable from 0 to 16mA.
				Tester Impedance Z0 = 75 Ω.
		IOH		VZ is typically the midpoint of VOH and VOL.
				IOL & IOH are adjusted to simulate a typical resistive load circuit.
	Current Source			ATE tester includes jig capacitance.
White Microelectronics • Phoenix, AZ • [phone]			2